# US 2021/0243394 A1 · Solid-state imaging device and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0243394 A1 - Document ID: US20210243394A1 - Status: Published application - Kind: A1 - Application number: 17/268,813 - Filed: 2019-08-20 - Published: 2021-08-05 - Earliest claimed: 2018-09-07 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Kazuyoshi YAMASHITA - Web page: https://patentgrep.com/patent/US20210243394A1 ## CPC - H04N 25/59: by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance - H10F 39/1865: {Overflow drain structures} - H04N 25/42: by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H04N 25/771: comprising storage means other than floating diffusion - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/8057: {Optical shielding} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A solid-state imaging device according to an embodiment of the present disclosure includes a light-receiving surface and a plurality of pixels arranged to face the light-receiving surface. Each of the pixels includes a photoelectric conversion section that photoelectrically converts light incident via the light-receiving surface, a charge-holding section that holds charges transferred from the photoelectric conversion section, a first potential barrier provided between the photoelectric conversion section and the charge-holding section, and a second potential barrier provided around a region including the photoelectric conversion section, the charge-holding section, and a first impurity semiconductor region. The first potential barrier is lower than the second potential barrier. ## Claims ### Claim 1 A solid-state imaging device comprising: a light-receiving surface; and a plurality of pixels arranged to face the light-receiving surface, each of the pixels including a photoelectric conversion section that photoelectrically converts light incident via the light-receiving surface, a charge-holding section that holds charges transferred from the photoelectric conversion section, a first potential barrier provided between the photoelectric conversion section and the charge-holding section, and a second potential barrier provided around a region including the photoelectric conversion section, the charge-holding section, and the first impurity semiconductor region, the first potential barrier being lower than the second potential barrier. ### Claim 2 (depends on 1) The solid-state imaging device according to claim 1, wherein the first potential barrier is formed by the first impurity semiconductor region, the second potential barrier is formed by a second impurity semiconductor region, and an impurity concentration of the first impurity semiconductor region is lower than an impurity concentration of the second impurity semiconductor region. ### Claim 3 (depends on 1) The solid-state imaging device according to claim 1, wherein each of the pixels further includes a first transfer transistor that controls a potential of the charge-holding section, a second transfer transistor that transfers the charges held in the charge-holding section to a floating diffusion, and a control section that controls the first transfer transistor and the second transfer transistor, the control section controls a height of the first potential barrier in accordance with an imaging mode. ### Claim 4 (depends on 3) The solid-state imaging device according to claim 3, wherein, in a first imaging mode, the control section causes the photoelectric conversion section and the charge-holding section to store charges in a state where the first potential barrier is kept lower than the second potential barrier, and thereafter turns ON the first transfer transistor and the second transfer transistor to transfer the charges stored in the photoelectric conversion section and the charge-holding section to the floating diffusion. ### Claim 5 (depends on 3) The solid-state imaging device according to claim 3, wherein, in a second imaging mode, the control section causes the charge-holding section of all of the sensor pixels to store charges in a state where a difference between the height of the first potential barrier and a height of the second potential barrier is narrowed, and thereafter turns ON the second transfer transistor to transfer the charges stored in the charge-holding section to the floating diffusion. ### Claim 6 (depends on 5) The solid-state imaging device according to claim 5, wherein, in the second imaging mode, the control section applies a negative bias to a gate of the first transfer transistor to narrow the difference between the height of the first potential barrier and the height of the second potential barrier. ### Claim 7 (depends on 5) The solid-state imaging device according to claim 5, wherein each of the pixels further includes a control transistor that controls the height of the first potential barrier, and the control section applies a negative bias to a gate of the control transistor in the second imaging mode to narrow the difference between the height of the first potential barrier and the height of the second potential barrier. ### Claim 8 An electronic apparatus comprising: a solid-state imaging device that outputs image data corresponding to incident light; and a signal processing circuit that processes the image data, the solid-state imaging device including a light-receiving surface, and a plurality of pixels arranged to face the light-receiving surface, each of the pixels including a photoelectric conversion section that photoelectrically converts light incident via the light-receiving surface, a charge-holding section that holds charges transferred from the photoelectric conversion section, a first potential barrier provided between the photoelectric conversion section and the charge-holding section, and a second potential barrier provided around a region including the photoelectric conversion section, the charge-holding section, and the first impurity semiconductor region, the first potential barrier being lower than the second potential barrier. ### Claim 9 (depends on 8) The electronic apparatus according to claim 8, further comprising an interface that allows a user to select one of a first imaging mode corresponding to a rolling shutter operation and a second imaging mode corresponding to a global shutter operation, wherein the solid-state imaging device executes one of an operation corresponding to the first imaging mode and an operation corresponding to the second imaging mode in accordance with the selection by the user. ### Claim 10 (depends on 8) The electronic apparatus according to claim 8, further comprising a mode control unit that selects, on a basis of the image data, one of a first imaging mode corresponding to a rolling shutter operation and a second imaging mode corresponding to a global shutter operation to instruct the solid-state imaging device to execute an operation corresponding to the selected imaging mode, wherein the solid-state imaging device executes one of an operation corresponding to the first imaging mode and an operation corresponding to the second imaging mode in accordance with the instruction by the mode control unit.