# US 2021/0242869 A1 · Semiconductor device

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- Number: US 2021/0242869 A1
- Document ID: US20210242869A1
- Status: Published application
- Kind: A1
- Application number: 17/236,658
- Filed: 2021-04-21
- Published: 2021-08-05
- Earliest claimed: 2019-05-17
- Assignees: Fuji Electric Co., Ltd.
- Applicants: Fuji Electric Co., Ltd.
- Inventors: Sho NAKAGAWA
- Web page: https://patentgrep.com/patent/US20210242869A1

## CPC

- H03K 17/063: {in field-effect transistor switches}
- H03K 17/687: the devices being field-effect transistors
- H02M 1/08: Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H03K 19/00: Logic circuits, i.e. having at least two inputs acting on one output (circuits for computer systems using fuzzy logic G06N7/02); Inverting circuits
- H03K 19/20: characterised by logic function, e.g. AND, OR, NOR, NOT circuits (H03K19/003 - H03K19/01 take precedence)
- H03K 2217/0063: High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
- H03K 2217/0081: Power supply means, e.g. to the switch driver
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)

## Abstract

A semiconductor device, including a power supply terminal, an output terminal, a ground terminal, an N-channel main MOSFET connected between the power supply terminal and the output terminal, a drive circuit which operates to drive the main MOSFET, using a potential difference, between the power supply terminal and an internal ground, as a power supply thereof, an internal ground generation circuit which is provided between the power supply terminal and the ground terminal and which generates the internal ground, an N-channel first MOSFET provided between an output terminal of the internal ground generation circuit and the ground terminal, and a low voltage detection circuit which is provided between the power supply terminal and the ground terminal, and which turns on the first MOSFET upon detecting that a voltage between the power supply terminal and the ground terminal drops below a prescribed voltage.

## Claims

### Claim 1

A semiconductor device, comprising:
a power supply terminal;
an output terminal;
a ground terminal;
an N-channel main metal-oxide-semiconductor field-effect transistor (MOSFET) connected between the power supply terminal and the output terminal;
a drive circuit which operates to drive the main MOSFET, using a potential difference, between the power supply terminal and an internal ground, as a power supply thereof;
an internal ground generation circuit which is provided between the power supply terminal and the ground terminal, and which generates the internal ground;
an N-channel first MOSFET provided between an output terminal of the internal ground generation circuit and the ground terminal; and
a low voltage detection circuit which is provided between the power supply terminal and the ground terminal, and which turns on the N-channel first MOSFET upon detecting that a voltage between the power supply terminal and the ground terminal drops below a prescribed voltage.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the low voltage detection circuit includes
a low voltage detection Zener diode which is connected to the power supply terminal and through which a current stops flowing in response to a drop in the voltage between the power supply terminal and the ground terminal below a breakdown voltage,
a first constant current diode and a second constant current diode, each of which is formed of a depletion MOSFET, connected in series between the low voltage detection Zener diode and the ground terminal,
a third constant current diode, which is formed of a depletion MOSFET, connected between the power supply terminal and an output terminal of the low voltage detection circuit, and
an N-channel second MOSFET which is connected between the output terminal of the low voltage detection circuit and the ground terminal, and which is turned off in response to a drop in a potential at a connection point between the first constant current diode and the second constant current diode while the low voltage detection Zener diode is not in breakdown.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, further comprising an AND circuit which turns on the N-channel first MOSFET only while the low voltage detection circuit detects that the voltage between the power supply terminal and the ground terminal drops below the prescribed voltage and the AND circuit receives an input for turning on the N-channel main MOSFET.

### Claim 4

A semiconductor device, comprising:
a power supply terminal;
an output terminal;
a ground terminal;
a main metal-oxide-semiconductor field-effect transistor (MOSFET) connected between the power supply terminal and the output terminal;
a drive circuit which operates to drive the main MOSFET, using a potential difference, between the power supply terminal and an internal ground, as a power supply thereof;
an internal ground generation circuit which includes
a first MOSFET which is connected to the power supply terminal and is turned off in response to the main MOSFET being turned on,
a second MOSFET which is connected in series with the first MOSFET, the second MOSFET and the first MOSFET having a first connection node therebetween as the internal ground,
a third MOSFET which is connected between the second MOSFET and the ground terminal and which is turned on in response to the main MOSFET being turned on,
a Zener diode which is connected between the power supply terminal and a gate terminal of the second MOSFET, and which outputs a reference voltage for generating the potential difference, and
a current source connected between the gate terminal of the second MOSFET and the ground terminal;
a fourth MOSFET connected between a second connection node, to which the second MOSFET and the third MOSFET are connected, and the first connection node; and
a low voltage detection circuit which is connected between the power supply terminal and the second connection node, and which turns on the fourth MOSFET upon detecting that a voltage between the power supply terminal and the second connection node drops below a prescribed voltage, wherein
each of the first and second MOSFETs is a P-channel MOSFET, and
each of the main MOSFET, the third MOSFET and the fourth MOSFET is an N-channel MOSFET.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4, wherein the low voltage detection circuit includes
a low voltage detection Zener diode which is connected to the power supply terminal and through which a current stops flowing in response to a drop in the voltage between the power supply terminal and the second connection node below a breakdown voltage,
a first constant current diode and a second constant current diode, each of which is formed of a depletion MOSFET, connected in series between the low voltage detection Zener diode and the second connection node,
a third constant current diode, which is formed of a depletion MOSFET, connected between the power supply terminal and a gate terminal of the fourth MOSFET, and
a fifth MOSFET which
is an N-channel MOSFET,
is connected between the gate terminal of the fourth MOSFET and the second connection node, and
is turned off to turn on the fourth MOSFET in response to a drop in a potential at a connection point between the first constant current diode and the second constant current diode while the low voltage detection Zener diode is not in breakdown.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, wherein the low voltage detection circuit further includes:
a diode connected in series with the low voltage detection Zener diode; and
a hysteresis generation unit including:
a sixth MOSFET connected in parallel to the diode,
a seventh MOSFET which is turned on in response to the fifth MOSFET being turned on, and
a fourth constant current diode and a fifth constant current diode, each of which is formed of a depletion MOSFET, connected in series between the power supply terminal and the seventh MOSFET and which turn on the sixth MOSFET by a potential at a connection point therebetween while the seventh MOSFET is ON, wherein
the sixth and seventh MOSFETs are respectively a P-channel MOSFET and an N-channel MOSFET.

### Claim 7 (depends on 4)

The semiconductor device according to claim 4, further comprises an eighth MOSFET which is a P-channel MOSFET and is connected between the power supply terminal and the second connection node, and which is turned on in response to the first MOSFET being turned on.