# US 2021/0242840 A1 · Compact rfic with stacked inductor and capacitor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242840 A1 - Document ID: US20210242840A1 - Status: Published application - Kind: A1 - Application number: 16/778,547 - Filed: 2020-01-31 - Published: 2021-08-05 - Earliest claimed: 2020-01-31 - Assignees: NXP B.V. - Applicants: NXP B.V. - Inventors: Vikas SHILIMKAR; Kevin KIM; Joseph Gerard SCHULTZ - Web page: https://patentgrep.com/patent/US20210242840A1 ## CPC - H03F 3/213: in integrated circuits - H03F 1/0288: {using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers} - H03F 3/195: in integrated circuits - H03F 3/245: {with semiconductor devices only} - H03F 3/68: Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics {(power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602)} - H10D 1/20: Inductors - H10D 1/47: Resistors having no potential barriers - H10D 1/68: Capacitors having no potential barriers - H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors} - H03F 2200/222: A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier - H03F 2200/451: the amplifier being a radio frequency amplifier - H10D 84/813: {Combinations of field-effect devices and capacitor only} - H03F: AMPLIFIERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Various embodiments relate to an integrated circuit including a transistor device having input and output terminals, and an inductor-capacitor (LC) circuit coupled to one of the terminals of the transistor device. The LC circuit includes a capacitor having a top plate and a bottom plate, a inductor having a coil structure, and a connector configured to couple the inductor and an interior portion the top plate of the capacitor. The inductor at least partially overlaps the capacitor. ## Claims ### Claim 1 An integrated circuit comprising: a semiconductor die; a transistor device integrally formed in the semiconductor die and having input and output terminals; and an inductor-capacitor (LC) circuit coupled to one of the terminals of the transistor device, the LC circuit comprising: a capacitor integrally formed in the semiconductor die and having a top plate and a bottom plate; an inductor integrally formed in the semiconductor die and having a coil structure and a first terminal; and a connector configured to couple the first terminal of the inductor and an interior portion of the top plate of the first capacitor, wherein the inductor at least partially overlaps the capacitor. ### Claim 2 (depends on 1) The integrated circuit of claim 1, wherein the inductor completely overlaps the capacitor. ### Claim 3 (depends on 1) The integrated circuit of claim 1, wherein the capacitor completely overlaps the inductor. ### Claim 4 (depends on 1) The integrated circuit of claim 1, wherein capacitor has a hole, wherein the hole is aligned with part of the coil structure. ### Claim 5 (depends on 1) The integrated circuit of claim 1, wherein the coil structure has a corner and wherein the hole is aligned with the corner. ### Claim 6 (depends on 1) The integrated circuit of claim 1, further comprising a resistor coupled in series with the inductor and the capacitor. ### Claim 7 (depends on 1) The integrated circuit of claim 1, wherein the interior portion the top plate of the capacitor includes one of a center 10%, center 20%, and the center 30% of the top plate of the capacitor. ### Claim 8 (depends on 1) The integrated circuit of claim 1, wherein the interior portion the top plate of the capacitor includes one of a center 40%, center 50%, and the center 60% of the top plate of the capacitor. ### Claim 9 A power amplifier system in an integrated circuit, the system comprising: a first transistor device having a first input terminal and a first output terminal; a second transistor device having a second input terminal and a second output terminal; an input matching circuit coupled to the first input terminal of the first transistor, the input matching circuit including a first inductor-capacitor (LC) circuit; an interstage matching circuit coupled between the first output terminal of first transistor and the second input terminal of the second transistor, the interstage matching circuit including a second LC circuit; wherein the first and second LC circuits each comprise: a capacitor having a top plate and a bottom plate; an inductor having a coil structure; and a connector configured to couple the inductor and an interior portion of the top plate of the capacitor, wherein the inductor at least partially overlaps the capacitor. ### Claim 10 (depends on 9) The power amplifier system of claim 9, wherein the inductor completely overlaps the capacitor. ### Claim 11 (depends on 9) The power amplifier system of claim 9, wherein the capacitor completely overlaps the inductor. ### Claim 12 (depends on 9) The power amplifier system of claim 9, wherein capacitor has a hole that is aligned with part of the coil structure. ### Claim 13 (depends on 9) The power amplifier system of claim 9, wherein the coil structure has a corner and wherein the hole is aligned with the corner. ### Claim 14 (depends on 9) The power amplifier system of claim 9, further comprising a resistor coupled in series with the inductor and the capacitor. ### Claim 15 (depends on 9) The power amplifier system of claim 9, wherein the interior portion the top plate of the capacitor includes one of a center 10%, center 20%, and the center 30% of the top plate of the capacitor. ### Claim 16 (depends on 9) The power amplifier system of claim 9, wherein the interior portion the top plate of the capacitor includes one of a center 40%, center 50%, and the center 60% of the top plate of the capacitor. ### Claim 17 A power amplification system comprising: an RF input terminal; a peak amplifier RF integrated circuit coupled at least indirectly to the RF input terminal; a carrier amplifier RF integrated circuit coupled at least indirectly to the RF input terminal, wherein at least one of the peak amplifier RF integrated circuit and the carrier amplifier RF integrated circuit includes: a transistor device having input and output terminals; and an LC circuit coupled to one of the terminals of the transistor device, the LC circuit comprising: a capacitor having a top plate and a bottom plate; an inductor having a coil structure; and a connector configured to couple the first inductor and an interior portion of the top plate of the first capacitor, wherein the inductor at least partially overlaps the capacitor. ### Claim 18 (depends on 17) The power amplification system of claim 17, wherein capacitor has a hole that is aligned with part of the coil structure. ### Claim 19 (depends on 17) The power amplification system of claim 17, wherein the coil structure has a corner and wherein the hole is aligned with the corner. ### Claim 20 (depends on 17) The power amplification system of claim 17, further comprising a resistor coupled in series with the inductor and the capacitor.