# US 2021/0242435 A1 · Manufacturing Method and Processing Device for Display Substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242435 A1 - Document ID: US20210242435A1 - Status: Published application - Kind: A1 - Application number: 16/652,317 - Filed: 2019-03-27 - Published: 2021-08-05 - Earliest claimed: 2019-03-27 - Assignees: Chengdu Boe Optoelectronics Technology Co., Ltd.; Boe Technology Group Co., Ltd. - Applicants: Chengdu Boe Optoelectronics Technology Co., Ltd.; Boe Technology Group Co., Ltd. - Inventors: De Yuan - Web page: https://patentgrep.com/patent/US20210242435A1 ## CPC - H10K 71/70: Testing, e.g. accelerated lifetime tests - H10K 59/12: Active-matrix OLED [AMOLED] displays - H10K 59/1201: {Manufacture or treatment} - H10K 71/831: {Aging} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract The present disclosure provides a manufacturing method and a processing device for a display substrate. The display substrate includes a light emitting device. The manufacturing method includes: applying an electrical signal to the display substrate to generate aging current flowing through the light emitting device; and applying a magnetic field to the display substrate for at least part of a time, during which the electrical signal is applied to the display substrate. The magnetic field is used to increase the aging current. ## Claims ### Claim 1 A manufacturing method for a display substrate, the display substrate comprising a light emitting device, and the manufacturing method comprising: applying an electrical signal to the display substrate to generate aging current flowing through the light emitting device; applying a magnetic field to the display substrate for at least part of a time, during which the electrical signal is applied to the display substrate, the magnetic field being used to increase the aging current. ### Claim 2 (depends on 1) The manufacturing method according to claim 1, wherein magnetic induction intensity of the magnetic field ranges from 20 mT to 400 mT. ### Claim 3 (depends on 1) The manufacturing method according to claim 1, wherein the applying of the magnetic field to the display substrate comprises: obtaining magnetic induction intensity of the magnetic field to be applied to the display substrate; and applying the magnetic field to the display substrate according to the magnetic induction intensity. ### Claim 4 (depends on 3) The manufacturing method according to claim 3, wherein the obtaining of the magnetic induction intensity of the magnetic field to be applied to the display substrate comprises: obtaining a relation curve between the magnetic induction intensity of the magnetic field to be applied to the light emitting device and current flowing through the light emitting device; and obtaining the magnetic induction intensity of the magnetic field to be applied to the display substrate according to the relation curve. ### Claim 5 (depends on 1) The manufacturing method according to claim 1, wherein: the display substrate further comprises a driving thin film transistor, a first electrode of the driving thin film transistor being electrically connected to a first voltage terminal for providing a first voltage, and a second electrode of the driving thin film transistor being electrically connected to a first electrode of the light emitting device, a gate of the driving thin film transistor being configured to receive a gate voltage, and a second electrode of the light emitting device being electrically connected to a second voltage terminal for providing a second voltage; the applying of the electrical signal to the display substrate comprises: applying the first voltage to the first voltage terminal, applying the second voltage to the second voltage terminal, and applying the gate voltage to the gate of the driving thin film transistor; and an absolute value of a difference between the gate voltage and the first voltage is inversely related to magnetic induction intensity of the magnetic field. ### Claim 6 (depends on 5) The manufacturing method according to claim 5, wherein: the first voltage is higher than the second voltage in a case where the driving thin film transistor is a PMOS transistor; and the first voltage is lower than the second voltage in a case where the driving thin film transistor is an NMOS transistor. ### Claim 7 (depends on 5) The manufacturing method according to claim 5, wherein the absolute value of the difference between the gate voltage and the first voltage ranges from 1V to 10V. ### Claim 8 (depends on 1) The manufacturing method according to claim 1, wherein a duration of applying the electrical signal is inversely related to magnetic induction intensity of the magnetic field. ### Claim 9 (depends on 1) The manufacturing method according to claim 1, further comprising: performing a packaging process on the display substrate before applying the electrical signal to the display substrate; and performing a module process on the display substrate after applying the electrical signal to the display substrate. ### Claim 10 A processing device for a display substrate, the display substrate comprising a light emitting device, and the processing device comprising: an electric signal applying device configured to apply an electrical signal to the display substrate to generate aging current flowing through the light emitting device; and a magnetic field generating device configured to apply a magnetic field to the display substrate for at least part of a time, during which the electrical signal applying device applies the electrical signal to the display substrate, the magnetic field being used to increase the aging current. ### Claim 11 (depends on 10) The processing device according to claim 10, wherein the magnetic field generating device comprises at least one magnetic field device plate for generating the magnetic field. ### Claim 12 (depends on 11) The processing device according to claim 11, wherein the at least one magnetic field device plate comprise a first magnetic field device plate and a second magnetic field device plate, the electric signal applying device being located between the first magnetic field device plate and the second magnetic field device plate. ### Claim 13 (depends on 12) The processing device according to claim 12, wherein the first magnetic field device plate comprises a first coil, and the second magnetic field device plate comprises a second coil; and the first coil and the second coil generate the magnetic field after being energized. ### Claim 14 (depends on 13) The processing device according to claim 13, wherein the magnetic field generating device is configured to adjust magnetic induction intensity of the magnetic field applied to the display substrate by adjusting a magnitude of current flowing through the first coil and a magnitude of current flowing through the second coil. ### Claim 15 (depends on 12) The processing device according to claim 12, wherein a plane on which the first magnetic field device plate is located is parallel to a plane on which the second magnetic field device plate is located. ### Claim 16 (depends on 10) The processing device according to claim 10, further comprising: a stage configured to support the display substrate, wherein the electrical signal applying device is integrated on the stage. ### Claim 17 (depends on 16) The processing device according to claim 16, wherein the first magnetic field device plate is above the stage, and the second magnetic field device plate is below the stage; a plane on which the first magnetic field device plate is located is parallel to a plane on which a supporting surface of the stage is located, and a plane on which the second magnetic field device plate is located is parallel to the plane on which the supporting surface of the stage is located. ### Claim 18 (depends on 16) The processing device according to claim 16, wherein the first magnetic field device plate is on a left side of the stage, and the second magnetic field device plate is on a right side of the stage; a plane on which the first magnetic field device plate is located is perpendicular to a plane on which a supporting surface of the stage is located, and a plane on which the second magnetic field device plate is located is perpendicular to a plane on which the supporting surface of the stage is located. ### Claim 19 (depends on 15) The processing device according to claim 15, wherein a distance between the first magnetic field device plate and the second magnetic field device plate ranges from 30 cm to 100 cm. ### Claim 20 (depends on 16) The processing device according to claim 16, wherein a distance between the stage and the first magnetic field device plate is equal to a distance between the stage and the second magnetic field device plate.