# US 2021/0242431 A1 · Light-emitting device

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- Number: US 2021/0242431 A1
- Document ID: US20210242431A1
- Status: Published application
- Kind: A1
- Application number: 17/012,700
- Filed: 2020-09-04
- Published: 2021-08-05
- Earliest claimed: 2020-02-04
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Hojung Syn
- Web page: https://patentgrep.com/patent/US20210242431A1

## CPC

- C09K 11/06: containing organic luminescent materials
- H10K 50/18: Carrier blocking layers
- H10K 85/324: {comprising aluminium, e.g. Alq3}
- H10K 85/342: {comprising iridium}
- H10K 85/631: {Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine}
- H10K 85/6572: {comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole}
- C09K 2211/1029: containing one nitrogen atom as the heteroatom
- C09K 2211/185: of the platinum group, i.e. Os, Ir, Pt, Ru, Rh or Pd
- H10K 50/11: characterised by the electroluminescent [EL] layers
- H10K 50/15: Hole transporting layers
- H10K 50/16: Electron transporting layers
- H10K 50/171: {Electron injection layers}
- H10K 2101/10: Triplet emission
- H10K 2101/40: Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
- H10K 2102/3026: {Top emission}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer disposed between the first electrode and the second electrode and including an emission layer; wherein the interlayer further includes: a layer A including an oxide of an inorganic compound; a layer B adjacent to an upper portion of the layer A and including an oxide of an inorganic compound; and a layer C adjacent to a lower portion of the layer A and including an oxide of an inorganic compound, and relationships between a refractive index a of the layer A, a refractive index b of the layer B, and a refractive index c of the layer C satisfy the Equations (1) and (2) defined herein.

## Claims

### Claim 1

A light-emitting device comprising:
a first electrode;
a second electrode facing the first electrode; and
an interlayer disposed between the first electrode and the second electrode and including an emission layer;
wherein the interlayer further comprises:
a layer A including an oxide of an inorganic compound;
a layer B adjacent to an upper portion of the layer A and including an oxide of an inorganic compound; and
a layer C adjacent to a lower portion of the layer A and including an oxide of an inorganic compound, and
relationships between a refractive index a of the layer A, a refractive index b of the layer B, and a refractive index c of the layer C satisfy the following Equations (1) and (2):
b−a=0.1 to 0.6 (1); and
c−a=0.1 to 0.6 (2).

### Claim 2 (depends on 1)

The light-emitting device of claim 1, wherein the refractive index a has a value from about 1.4 to about 1.6.

### Claim 3 (depends on 1)

The light-emitting device of claim 1, wherein the refractive index b has a value from about 1.5 to about 2.0.

### Claim 4 (depends on 1)

The light-emitting device of claim 1, wherein the refractive index c has a value from about 1.5 to about 2.0.

### Claim 5 (depends on 1)

The light-emitting device of claim 1, wherein the first electrode is an anode, and the second electrode is a cathode.

### Claim 6 (depends on 1)

The light-emitting device of claim 1, wherein the light-emitting device further comprises a capping layer.

### Claim 7 (depends on 1)

The light-emitting device of claim 1, wherein the light-emitting device further comprises a capping layer, and the layer A is disposed between the emission layer and the capping layer.

### Claim 8 (depends on 1)

The light-emitting device of claim 1, wherein the interlayer comprises i) a capping layer, ii) a hole transport region, including a hole injection layer, disposed between the first electrode and the emission layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer, or any combination thereof, and iii) an electron transport region, including a hole blocking layer, disposed between the emission layer and the second electrode, a buffer layer, an electron transport layer, an electron injection layer, or any combination thereof.

### Claim 9 (depends on 1)

The light-emitting device of claim 1, wherein the inorganic compound is Al, Si, In, Ga, Zn, or any combination thereof.

### Claim 10 (depends on 1)

The light-emitting device of claim 1, wherein the oxide of an inorganic compound is amorphous.

### Claim 11 (depends on 1)

The light-emitting device of claim 1, wherein the oxide of an inorganic compound is Al2O3, SiOx (0≤x≤2), Six(Al2O3)1-x (0.4≤x≤1), an amorphous indium gallium zinc oxide, an amorphous indium zinc oxide, In2O3, or any combination thereof.

### Claim 12

The light-emitting device of 8, wherein the layer B comprises an electron transport layer, and the layer C comprises an emission layer.

### Claim 13

The light-emitting device of 8, wherein the layer B comprises an electron transport layer, and the layer C comprises a buffer layer.

### Claim 14 (depends on 13)

The light-emitting device of claim 13, wherein the buffer layer is in contact with an emission layer.

### Claim 15

The light-emitting device of 8, wherein the layer B comprises an electron injection layer, and the layer C comprises an electron transport layer.

### Claim 16

The light-emitting device of 8, wherein the layer B comprises a capping layer, and the layer C comprises an electron injection layer.

### Claim 17 (depends on 1)

The light-emitting device of claim 1, wherein the emission layer is configured to emit blue light.

### Claim 18 (depends on 1)

The light-emitting device of claim 1, wherein the emission layer includes a phosphorescent dopant.

### Claim 19 (depends on 1)

The light-emitting device of claim 1, wherein the light-emitting device is a top-emission-type light-emitting device.

### Claim 20 (depends on 1)

An electronic apparatus comprising a thin-film transistor and the light-emitting device of claim 1,
wherein the thin-film transistor comprises a source electrode, a drain electrode, an activation layer, and a gate electrode, and
the first electrode of the light-emitting device is electrically connected to one of the source electrode and the drain electrode of the thin-film transistor.
