# US 2021/0242415 A1 · Fabrication method for fused multi-layer amorphous selenium sensor

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2021/0242415 A1
- Document ID: US20210242415A1
- Status: Published application
- Kind: A1
- Application number: 17/155,446
- Filed: 2021-01-22
- Published: 2021-08-05
- Earliest claimed: 2018-03-19
- Assignees: The Research Foundation for The State University of New York
- Applicants: The Research Foundation for The State University of New York
- Inventors: James Scheuermann; Wei Zhao
- Web page: https://patentgrep.com/patent/US20210242415A1

## CPC

- H10F 39/1898: {Indirect radiation image sensors, e.g. using luminescent members}
- G01T 1/20: with scintillation detectors
- G01T 1/24: with semiconductor detectors
- G01T 1/241: {Electrode arrangements, e.g. continuous or parallel strips or the like}
- G01T 1/247: {Detector read-out circuitry (for processing gain or off-set correction H04N)}
- H10F 30/29: the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F 39/022: {of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe}
- H10F 39/195: {X-ray, gamma-ray or corpuscular radiation imagers}
- H10F 77/121: comprising only selenium or only tellurium
- H10K 30/10: comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K 39/32: Organic image sensors
- H10K 39/36: Devices specially adapted for detecting X-ray radiation
- H10K 30/50: Photovoltaic [PV] devices
- Y02E 10/549: Organic PV cells
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

## Claims

### Claim at position 1

-18. (canceled)

### Claim 19

A sensor, the sensor comprising:
an oxide layer; and
a multi-layer structure formed by contact between a first layer of amorphous selenium and a second layer of amorphous selenium, wherein
the second layer of amorphous selenium is formed over the first layer of amorphous selenium, wherein the first layer of amorphous selenium is fused to the second layer of amorphous selenium, and
wherein the oxide layer is formed over the second layer of amorphous selenium.

### Claim 20 (depends on 19)

The sensor of claim 19, further comprising a first substrate, wherein the first substrate is fused to the oxide layer.

### Claim 21 (depends on 20)

The sensor of claim 20, wherein the first substrate comprises a indium tin oxide (ITO) coated glass substrate.

### Claim 22 (depends on 21)

The sensor of claim 21, where the ITO coated glass substrate is a high voltage ITO coated glass substrate.

### Claim 23 (depends on 21)

The sensor of claim 21, wherein the first substrate comprises an electronic readout.

### Claim 24 (depends on 19)

The sensor of claim 19, further comprising a second substrate, wherein the first layer of amorphous selenium is formed over the second substrate.

### Claim 25 (depends on 24)

The sensor of claim 24, wherein the second substrate comprises a glass substrate.

### Claim 26 (depends on 25)

The sensor of claim 25, wherein the glass substrate is an electroded glass substrate.

### Claim 27 (depends on 19)

The sensor of claim 19, further comprising an electrode, wherein the electrode is formed over the first layer of amorphous selenium.

### Claim 28 (depends on 27)

The sensor of claim 27, wherein the electrode comprises a poly(3,4-ethylenedioxythiophene) (PEDOT) electrode.

### Claim 29 (depends on 19)

The sensor of claim 19, wherein the oxide layer comprises a indium gallium zinc oxide (IGZO) layer.

### Claim 30 (depends on 19)

The sensor of claim 19, wherein a thickness of the first layer of amorphous selenium is less than a thickness of the second layer of amorphous selenium.

### Claim 31 (depends on 19)

The sensor of claim 19, wherein at least one of the first layer of amorphous selenium and the second layer of amorphous selenium comprises doped amorphous selenium.

### Claim 32 (depends on 19)

The sensor of claim 19, wherein the multi-layer structure is free of pores.

### Claim 33 (depends on 19)

The sensor of claim 19, wherein the first layer of amorphous selenium is of a thickness between 0.5 microns and 100 microns.

### Claim 34 (depends on 19)

The sensor of claim 19, wherein the first layer of amorphous selenium comprises a dopant selected from the group consisting of arsenic, tellurium and chlorine.

### Claim 35 (depends on 34)

The sensor of claim 34, wherein the dopant is included in amount of 0.1 atomic percent to 0.5 atomic percent.

### Claim 36 (depends on 19)

The sensor of claim 19, wherein a thickness of the first layer of amorphous selenium is within 5% to 200% of a thickness of the second layer of amorphous selenium.