# US 2021/0242405 A1 · Method of quality determining of deposition mask, method of manufacturing deposition mask, method of manufacturing deposition mask device, method of selecting deposition mask and deposition mask > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242405 A1 - Document ID: US20210242405A1 - Status: Published application - Kind: A1 - Application number: 17/142,582 - Filed: 2021-01-06 - Published: 2021-08-05 - Earliest claimed: 2018-07-09 - Assignees: Dai Nippon Printing Co., Ltd. - Applicants: Dai Nippon Printing Co., Ltd. - Inventors: Chikao IKENAGA - Web page: https://patentgrep.com/patent/US20210242405A1 ## CPC - C23C 14/042: {using masks} - C23C 14/12: Organic material - C23C 16/042: {using masks} - G03F 7/0015: {Production of aperture devices, microporous systems or stamps} - G06T 7/0006: {using a design-rule based approach} - H10K 71/164: {using vacuum deposition} - H10K 71/166: {using selective deposition, e.g. using a mask} - G06T 2207/30108: Industrial image inspection - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - G06T: IMAGE DATA PROCESSING OR GENERATION, IN GENERAL - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A method of quality determination of a deposition mask according to the present disclosure includes: a measuring step that measures a dimension X1 from a P1 point to a Q1 point, and a dimension X2 from a P2 point to a Q2 point; and a determining step that determines a quality of a deposition mask, based on the dimension X1 and the dimension X2 measured in the measuring step. ## Claims ### Claim 1 A method of quality determination of a deposition mask for determining a quality of a deposition mask extending in a first direction, the deposition mask comprising: a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction; a P1 point and a Q1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and a P2 point and a Q2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction; the method comprising: a measuring step that measures a dimension X1 from the P1 point to the Q1 point, and a dimension X2 from the P2 point to the Q2 point; and a determining step that determines a quality of the deposition mask, based on the dimension X1 and the dimension X2 measured in the measuring step. ### Claim 2 (depends on 1) The method of quality determination of a deposition mask according to claim 1, wherein the determining step determines whether an equation below is satisfied:  α X - X ⁢ ⁢ 1 + X ⁢ ⁢ 2 2  ≤ α X 15 × 10 - 3 _ in which αX represents a design value of the dimension X1 and the dimension X2. ### Claim 3 (depends on 1) The method of quality determination of a deposition mask according to claim 1, wherein: the deposition mask has a plurality of through holes; and the determining step determines whether an equation below is satisfied:  X ⁢ ⁢ 1 - X ⁢ ⁢ 2  ≤ α X 10 × α Y W Y × 10 - 3 _ in which αX represents a design value of the dimension X1 and the dimension X2, αY represents a design value of a dimension from the P1 point to the P2 point and a dimension from the Q1 point to the Q2 point, and WY represents a maximum value of a distance between center points of the two through holes in the second direction. ### Claim 4 (depends on 1) The method of quality determination of a deposition mask according to claim 1, wherein the P1 point and the P2 point are intended to be symmetrically arranged with respect to the first center axis line during deposition, and the Q1 point and the Q2 point are intended to be symmetrically arranged with respect to the first center axis line during deposition. ### Claim 5 (depends on 1) The method of quality determination of a deposition mask according to claim 1, wherein: the P1 point and the P2 point are arranged on one side of a second center axis line arranged at a center position of the first direction; and the Q1 point and the Q2 point are arranged on the other side of the second center axis line. ### Claim 6 (depends on 5) The method of quality determination of a deposition mask according to claim 5, wherein the P1 point and the Q1 point are intended to be symmetrically arranged with respect to the second center axis line during deposition, and the P2 point and the Q2 point are intended to be symmetrically arranged with respect to the second center axis line during deposition. ### Claim 7 (depends on 1) A method of manufacturing a deposition mask comprising: a step of preparing a deposition mask; and a step of determining a quality of the deposition mask by the method of quality determination of a deposition mask according to claim 1. ### Claim 8 A method of manufacturing a deposition mask extending in a first direction, the method comprising: a step of supplying an elongated metal plate extending in a strip shape; a step of etching the metal plate by a photolithographic technique to form a first recess in the metal plate from a first surface side; and a step of etching the metal plate by the photolithography technique to form a second recess in the metal plate from the second surface-side, the deposition mask comprises: a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction; a P1 point and a Q1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and a P2 point and a Q2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction; wherein the deposition mask satisfies an equation below:  α X - X ⁢ ⁢ 1 + X ⁢ ⁢ 2 2  ≤ α X 15 × 10 - 3 _ in which X1 represents a dimension from the P1 point to the Q1 point, X2 represents a dimension from the P2 point to the Q2 point, and αX represents a design value of the dimension X1 and the dimension X2. ### Claim 9 (depends on 8) The method of manufacturing a deposition mask according to claim 8, wherein: the deposition mask has a plurality of through holes formed by communicating the first recess and the second recess with each other; and wherein the deposition mask satisfies an equation below:  X ⁢ ⁢ 1 - X ⁢ ⁢ 2  ≤ α X 10 × α Y W Y × 10 - 3 _ in which αX represents a design value of the dimension X1 and the dimension X2, αY represents a design value of a dimension from the P1 point to the P2 point and a dimension from the Q1 point to the Q2 point, and WY represents a maximum value of a distance between center points of the two through holes in the second direction. ### Claim 10 A method of manufacturing a deposition mask extending in a first direction, the method comprising: a step of supplying an elongated metal plate extending in a strip shape; a step of etching the metal plate by a photolithographic technique to form a first recess in the metal plate from a first surface side; and a step of etching the metal plate by the photolithography technique to form a second recess in the metal plate from the second surface side, the deposition mask comprises: a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction; a P1 point and a Q1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; a P2 point and a Q2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction; and a plurality of throughholes formed by communicating the first recess and the second recess with each other, wherein the deposition mask satisfies an equation below:  X ⁢ ⁢ 1 - X ⁢ ⁢ 2  ≤ α X 10 × α Y W Y × 10 - 3 _ in which X1 represents a dimension from the P1 point to the Q1 point X2 represents a dimension from the P2 point to the Q2 point αX represents a design value of the dimension X1 and the dimension X2, αY represents a design value of a dimension from the P1 point to the P2 point and a dimension from the Q1 point to the Q2 point, and WY represents a maximum value of a distance between center points of two through holes in the second direction. ### Claim 11 (depends on 7) A method of manufacturing a deposition mask device comprising: a step of preparing the deposition mask by the method of manufacturing a deposition mask according to claim 7; and a step of applying a tensile force to the deposition mask in the first direction and stretching the deposition mask on a frame. ### Claim 12 A method of selecting a deposition mask extending in a first direction, the deposition mask comprising: a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction; a P1 point and a Q1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and a P2 point and a Q2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction; the method comprising: a measuring step that measures a dimension X1 from the P1 point to the Q1 point, and a dimension X2 from the P2 point to the Q2 point; and a selecting step that selects the deposition mask wherein the dimension X1 and the dimension X2 measured in the measuring step satisfy an equation below:  α X - X ⁢ ⁢ 1 + X ⁢ ⁢ 2 2  ≤ α X 15 × 10 - 3 _ in which αX represents a design value of the dimension X1 and the dimension X2. ### Claim 13 A method of selecting a deposition mask extending in a first direction and having a plurality of through holes, the deposition mask comprising: a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction; a P1 point and a Q1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and a P2 point and a Q2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction; the method comprising: a measuring step that measures a dimension X1 from the P1 point to the Q1 point, and a dimension X2 from the P2 point to the Q2 point; and a selecting step that selects the deposition mask wherein the dimension X1 and the dimension X2 measured in the measuring step satisfy an equation below:  X ⁢ ⁢ 1 - X ⁢ ⁢ 2  ≤ α X 10 × α Y W Y × 10 - 3 _ in which αX represents a design value of the dimension X1 and the dimension X2, αY represents a design value of a dimension from the P1 point to the P2 point and a dimension from the Q1 point to the Q2 point, and WY represents a maximum value of a distance between center points of two through holes in the second direction. ### Claim 14 A deposition mask extending in a first direction, comprising: a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction; a P1 point and a Q1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and a P2 point and a Q2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction; wherein the deposition mask satisfies an equation below:  α X - X ⁢ ⁢ 1 + X ⁢ ⁢ 2 2  ≤ α X 15 × 10 - 3 _ in which X1 represents a dimension from the P1 point to the Q1 point, X2 represents a dimension from the P2 point to the Q2 point, and αX represents a design value of the dimension X1 and the dimension X2. ### Claim 15 A deposition mask extending in a first direction and having a plurality of through holes, comprising: a first center axis line that extends in the first direction and is arranged at a center position of a second direction orthogonal to the first direction; a P1 point and a Q1 point that are provided on one side of the first center axis line and are spaced apart from each other along the first direction; and a P2 point and a Q2 point that are provided on the other side of the first center axis line and are spaced apart from each other along the first direction; wherein the deposition mask satisfies an equation below:  X ⁢ ⁢ 1 - X ⁢ ⁢ 2  ≤ α X 10 × α Y W Y × 10 - 3 _ in which X1 represents a dimension from the P1 point to the Q1 point, X2 represents a dimension from the P2 point to the Q2 point, αX represents a design value of the dimension X1 and the dimension X2, αY represents a design value of a dimension from the P1 point to the P2 point and a dimension from the Q1 point to the Q2 point, and WY represents a maximum value of a distance between center points of two through holes in the second direction.