# US 2021/0242389 A1 · Methods for forming thermoelectric elements > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242389 A1 - Document ID: US20210242389A1 - Status: Published application - Kind: A1 - Application number: 17/026,110 - Filed: 2020-09-18 - Published: 2021-08-05 - Earliest claimed: 2012-10-31 - Assignees: Matrix Industries, Inc. - Applicants: Matrix Industries, Inc. - Inventors: Akram I. Boukai; Douglas W. Tham - Web page: https://patentgrep.com/patent/US20210242389A1 ## CPC - H10N 10/01: Manufacture or treatment - H10N 10/17: characterised by the structure or configuration of the cell or thermocouple forming the device - H10P 50/00: Etching of wafers, substrates or parts of devices - H10P 50/246: {of Group III-V materials} - H10P 50/264: {by chemical means} - H10P 50/266: {by vapour etching only} - H10P 50/613: {of Group IV materials} - H10P 50/642: {Chemical etching} - H10P 50/644: {Anisotropic liquid etching (H10P50/61 takes precedence)} - H10P 52/402: {of semiconductor materials} - H10P 90/126: {by chemical etching} - H10P 95/064: {the removal being chemical etching} - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The present disclosure provides a method for forming a thermoelectric device, comprising providing a semiconductor substrate and providing a first layer of an etching material adjacent to the semiconductor substrate. The etching material facilitates the etching of the semiconductor substrate upon exposure to an oxidizing agent and a chemical etchant. Next, a second layer of a semiconductor oxide is provided adjacent to the first layer, and the second layer is patterned to form a pattern of holes or wires. The second layer and first layer are then sequentially etched to expose portions of the semiconductor substrate. Exposed portions of the semiconductor substrate are then contacted with an oxidizing agent and a chemical etchant to transfer the pattern to the semiconductor substrate. ## Claims ### Claim 1 A method for forming a thermoelectric element having a figure of merit (ZT) that is at least about 0.2, comprising: (a) providing a chamber comprising a first substrate in contact with a second substrate, wherein said first substrate and said second substrate are disposed between and in electrical communication with a plurality of electrodes; and (b) using said plurality of electrodes to apply an electrical potential across said first substrate and said second substrate to direct electrical current through said first substrate and said second substrate while applying a pressure of greater than or equal to about 10 atm to said first substrate and said second substrate to form a thermoelectric element comprising a pattern of holes, wherein said thermoelectric element has said ZT that is at least about 0.2. ### Claim 2 (depends on 1) The method of claim 1, wherein said pressure is greater than or equal to about 100 atm. ### Claim 3 (depends on 2) The method of claim 2, wherein said pressure is greater than or equal to about 1000 atm. ### Claim 4 A method for forming a thermoelectric element having a figure of merit (ZT) that is at least about 0.2, comprising: (a) providing a chamber comprising a first substrate in contact with a second substrate, wherein said first substrate and said second substrate are disposed between and in electrical communication with a plurality of electrodes; and (b) using said plurality of electrodes to apply an electrical potential across said first substrate and said second substrate to direct electrical current through said first substrate and said second substrate to form a thermoelectric element comprising a pattern of holes, wherein said thermoelectric element is formed at a temperature from about 100° C. and 1000° C., and wherein said thermoelectric element has a ZT that is at least about 0.2. ### Claim 5 (depends on 1) The method of claim 1, wherein said first substrate or said second substrate comprises one or more members selected from the group consisting of bismuth, antimony, and tellurium. ### Claim 6 (depends on 6) The method of claim 6, wherein each of said first substrate and said second substrate comprises one or more members selected from the group consisting of bismuth, antimony, and tellurium. ### Claim 7 (depends on 1) The method of claim 1, wherein said ZT is at least about 0.5. ### Claim 8 (depends on 7) The method of claim 7, wherein said ZT is at least about 1. ### Claim 9 (depends on 8) The method of claim 8, wherein said ZT is at least about 1.5. ### Claim 10 (depends on 1) The method of claim 1, wherein said first substrate or said second substrate does not include a metallic coating. ### Claim 11 (depends on 1) The method of claim 1, wherein said electrical potential is applied to said first substrate and said second substrate by a direct current. ### Claim 12 (depends on 1) The method of claim 1, wherein said electrical potential is between about 1 volt and 1000 volts. ### Claim 13 (depends on 12) The method of claim 12, wherein said electrical potential is between about 10 volts and 500 volts. ### Claim 14 (depends on 13) The method of claim 13, wherein said electrical potential is between about 20 volts and 200 volts. ### Claim 15 A method for forming a thermoelectric element having a figure of merit (ZT) that is at least about 0.2, comprising: (a) providing a chamber comprising a first substrate in contact with a second substrate, wherein said first substrate and said second substrate are disposed between and in electrical communication with a plurality of electrodes, wherein said chamber comprises an inert gas; and (b) using said plurality of electrodes to apply an electrical potential across said first substrate and said second substrate to direct electrical current through said first substrate and said second substrate to form a thermoelectric element comprising a pattern of holes, wherein said thermoelectric element has a ZT that is at least about 0.2. ### Claim 16 (depends on 15) The method of claim 15, wherein said inert gas comprises nitrogen, argon, or helium. ### Claim 17 (depends on 1) The method of claim 1, wherein said first substrate or said second substrate has a dimension from about 10 micrometers to 500 micrometers. ### Claim 18 (depends on 4) The method of claim 4, wherein said first substrate or said second substrate does not include a metallic coating. ### Claim 19 (depends on 4) The method of claim 4, wherein said electrical potential is applied to said first substrate and said second substrate by a direct current. ### Claim 20 (depends on 4) The method of claim 4, wherein said ZT is at least about 0.5. ### Claim 21 (depends on 20) The method of claim 20, wherein said ZT is at least about 1. ### Claim 22 (depends on 21) The method of claim 21, wherein said ZT is at least about 1.5. ### Claim 23 (depends on 15) The method of claim 15, wherein said first substrate or said second substrate does not include a metallic coating. ### Claim 24 (depends on 15) The method of claim 15, wherein said electrical potential is applied to said first substrate and said second substrate by a direct current. ### Claim 25 (depends on 15) The method of claim 15, wherein said ZT is at least about 0.5. ### Claim 26 (depends on 25) The method of claim 25, wherein said ZT is at least about 1. ### Claim 27 (depends on 26) The method of claim 26, wherein said ZT is at least about 1.5.