# US 2021/0242387 A1 · Thermoelectric generator

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- Number: US 2021/0242387 A1
- Document ID: US20210242387A1
- Status: Published application
- Kind: A1
- Application number: 17/158,904
- Filed: 2021-01-26
- Published: 2021-08-05
- Earliest claimed: 2020-01-31
- Assignees: STMicroelectronics S.r.l.
- Applicants: Stmicroelectronics S.R.L.
- Inventors: Paolo FERRARI; Flavio Francesco VILLA; Luca ZANOTTI; Andrea NOMELLINI; Luca SEGHIZZI
- Web page: https://patentgrep.com/patent/US20210242387A1

## CPC

- H10N 10/8556: {comprising compounds containing germanium or silicon}
- H10N 10/01: Manufacture or treatment
- H10N 10/17: characterised by the structure or configuration of the cell or thermocouple forming the device
- H10N 10/855: comprising compounds containing boron, carbon, oxygen or nitrogen
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A thermoelectric generator includes a substrate and one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential by Seebeck effect. The thermoelectric generator includes a cavity between the substrate and the thermoelectric elements. The thermoelectric generator includes, within the cavity, a support structure for supporting the thermoelectric elements. The support structure has a thermal conductivity lower than a thermal conductivity of the substrate.

## Claims

### Claim 1

A thermoelectric generator, comprising:
a substrate;
one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential;
a cavity between the substrate and the thermoelectric elements, and
a support structure within the cavity and supporting the thermoelectric elements, the support structure having a thermal conductivity lower than a thermal conductivity of the substrate.

### Claim 2 (depends on 1)

The thermoelectric generator according to claim 1, wherein a ratio between the thermal conductivity of the support structure and the thermal conductivity of the substrate is lower than 0.02.

### Claim 3 (depends on 1)

The thermoelectric generator according to claim 1, wherein the support structure includes at least one material having a thermal conductivity below 2 W/mK.

### Claim 4 (depends on 3)

The thermoelectric generator according to claim 3, wherein the at least one material including at least one among porous silicon, hydrogen silsesquioxane and high density plasma oxide.

### Claim 5 (depends on 3)

The thermoelectric generator according to claim 3, wherein the cavity is filled with the at least one material.

### Claim 6 (depends on 1)

The thermoelectric generator according to claim 1, wherein the at least one thermoelectric element includes a plurality of interconnected thermoelectric nanostructures.

### Claim 7 (depends on 6)

The thermoelectric generator according to claim 6, wherein the plurality of interconnected thermoelectric nanostructures include a plurality of thermoelectric nanostructures having a first type of conductivity and a plurality of thermoelectric nanostructures having a second type of conductivity opposite the first type.

### Claim 8 (depends on 6)

The thermoelectric generator according to claim 6, wherein the thermoelectric nanostructures are made of silicon.

### Claim 9 (depends on 6)

The thermoelectric generator according to claim 6, wherein the thermoelectric nanostructures are made of polysilicon.

### Claim 10

A method for manufacturing a thermoelectric generator, comprising:
providing a substrate;
providing, on the substrate, one or more thermoelectric elements
forming a cavity between the substrate and the thermoelectric elements, and
providing, within the cavity, a support structure for supporting the thermoelectric elements, the support structure having a thermal conductivity lower than a thermal conductivity of the substrate.

### Claim 11 (depends on 10)

The method of claim 10, further comprising forming the cavity after providing the one or more thermoelectric elements.

### Claim 12 (depends on 10)

The method of claim 10, further comprising forming the cavity before providing the one or more thermoelectric elements.

### Claim 13 (depends on 10)

The method of claim 10, wherein providing the one or more thermoelectric elements includes forming a plurality of interconnected thermoelectric nanostructures above the substrate.

### Claim 14 (depends on 13)

The method of claim 13, further comprising:
doping a first group of the thermoelectric nanostructures with N-type dopants; and
doping a second group of the thermoelectric nanostructures with P-type dopants.

### Claim 15

A thermoelectric generator, comprising:
a substrate;
a cavity in the substrate;
a support structure in the cavity; and
a thermoelectric element including:
a plurality first thermoelectric nanostructures supported above the substrate by the support structure and doped with N-type dopants; and
a plurality of thermoelectric nanostructures supported above the substrate by the support structure and doped with P-type dopants.

### Claim 16 (depends on 15)

The thermoelectric generator of claim 15, wherein the substrate having a thermal conductivity at least 50 times greater than a thermal conductivity of the support structure.

### Claim 17 (depends on 15)

The thermoelectric generator of claim 15, wherein the support structure entirely filling the cavity.

### Claim 18 (depends on 15)

The thermoelectric generator of claim 15, wherein the thermoelectric element including an electrically conductive connectors coupling the first thermoelectric nanostructures to the second thermoelectric nanostructures.

### Claim 19 (depends on 15)

The thermoelectric generator of claim 15, wherein the thermoelectric element including a plurality of electrically conductive connectors each coupling a respective one of the first thermoelectric nanostructures to a respective one of the second thermoelectric nanostructures.

### Claim 20 (depends on 19)

The thermoelectric generator of claim 19, further comprising an electrically insulating layer between the support structure and the first and second thermoelectric nanostructures.
