# US 2021/0242384 A1 · Light-emitting diode chip, display panel, electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242384 A1 - Document ID: US20210242384A1 - Status: Published application - Kind: A1 - Application number: 17/235,661 - Filed: 2021-04-20 - Published: 2021-08-05 - Earliest claimed: 2019-12-31 - Assignees: Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. - Applicants: Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. - Inventors: Ya-Wen LIN; Chia-Hung HUANG; Shun Kuei YANG; KUO-TUNG HUANG - Web page: https://patentgrep.com/patent/US20210242384A1 ## CPC - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/14: comprising multiple light-emitting semiconductor components - H10H 20/81: Bodies - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/831: characterised by their shape - H10H 20/835: {Reflective materials} - H10W 90/00: Package configurations - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light-emitting diode (LED) chip is provided. The LED chip includes a first semiconductor layer, a second semiconductor layer, a first electrode electrically connected with the first semiconductor layer, and a second electrode electrically connected with the second semiconductor layer. The first electrode is in an annular shape and surrounds the second electrode. The first electrode and the second electrode cooperate to define a first channel therebetween. The first channel is in an annular shape. The first electrode defines at least one second channel therein. The at least one second channel extends through an inner side and an outer side of the first electrode and communicates with the first channel. A communication between the first channel and the second channel facilitates solder volatiles during soldering the LED chip, and potential short circuits can be further avoided. A display panel and an electronic device are further provided. ## Claims ### Claim 1 A light-emitting diode (LED) chip, comprising a first semiconductor layer, a second semiconductor layer, a first electrode electrically connected with the first semiconductor layer, and a second electrode electrically connected with the second semiconductor layer, wherein the first electrode is in an annular shape and surrounds the second electrode; the first electrode and the second electrode cooperate to define a first channel therebetween, the first channel being in an annular shape; and the first electrode defines at least one second channel therein, the at least one second channel extends through an inner side and an outer side of the first electrode and communicates with the first channel. ### Claim 2 (depends on 1) The LED chip of claim 1, wherein the first electrode is disposed on a side of the first semiconductor layer close to the second semiconductor layer. ### Claim 3 (depends on 2) The LED chip of claim 2, wherein the first semiconductor layer is an N-type semiconductor, the second semiconductor layer is a P-type semiconductor, the first electrode is an N-type electrode, and the second electrode is a P-type electrode; and the LED chip further comprises a current diffusion layer located between the P-type electrode and the P-type semiconductor. ### Claim 4 (depends on 1) The LED chip of claim 1, wherein the second electrode is disposed on a side of the second semiconductor layer away from the first semiconductor layer. ### Claim 5 (depends on 4) The LED chip of claim 4, wherein the first semiconductor layer is a P-type semiconductor, the second semiconductor layer is an N-type semiconductor, the first electrode is a P-type electrode, and the second electrode is an N-type electrode; and the LED chip further comprises a current diffusion layer located between the P-type electrode and the P-type semiconductor. ### Claim 6 (depends on 1) The LED chip of claim 1, further comprising a quantum well layer, the quantum well layer being located between the first semiconductor layer and the second semiconductor layer. ### Claim 7 (depends on 5) The LED chip of claim 5, wherein the second channel extends from the first electrode to one or more layers below the first electrode. ### Claim 8 (depends on 1) The LED chip of claim 1, wherein an end of the first electrode away from the first semiconductor layer and an end of the second electrode away from the second semiconductor layer are located on the same plane. ### Claim 9 (depends on 1) The LED chip of claim 1, wherein a geometric center of a top surface of the second electrode coincides with a geometric center of a top surface of the first electrode. ### Claim 10 (depends on 1) The LED chip of claim 1, wherein each of the first electrode and the second electrode is a metal reflective electrode. ### Claim 11 A display panel, comprising a backplane and a plurality of LED chips mounted on the backplane, wherein each of the plurality of LED chips comprises a first semiconductor layer, a second semiconductor layer, a first electrode electrically connected with the first semiconductor layer, and a second electrode electrically connected with the second semiconductor layer; the first electrode is in an annular shape and surrounds the second electrode; the first electrode and the second electrode cooperate to define a first channel there between, the first channel being in an annular shape; and the first electrode defines at least one second channel therein, the at least one second channel extends through an inner side and an outer side of the first electrode and communicates with the first channel. ### Claim 12 (depends on 11) The display panel of claim 11, wherein the backplane is provided with a bonding electrode matched with the first electrode and the second electrode of the LED chip, the LED chip is flip-mounted on the backplane after being bonded with the bonding electrode through the first electrode and the second electrode. ### Claim 13 (depends on 11) The display panel of claim 11, wherein the first electrode is disposed on a side of the first semiconductor layer close to the second semiconductor layer. ### Claim 14 (depends on 13) The display panel of claim 13, wherein the first semiconductor layer is an N-type semiconductor, the second semiconductor layer is a P-type semiconductor, the first electrode is an N-type electrode, and the second electrode is a P-type electrode; and the LED chip further comprises a current diffusion layer located between the P-type electrode and the P-type semiconductor. ### Claim 15 (depends on 11) The display panel of claim 11, wherein the second electrode is disposed on a side of the second semiconductor layer away from the first semiconductor layer. ### Claim 16 (depends on 15) The display panel of claim 15, wherein the first semiconductor layer is a P-type semiconductor, the second semiconductor layer is an N-type semiconductor, the first electrode is a P-type electrode, and the second electrode is an N-type electrode; and the LED chip further comprises a current diffusion layer located between the P-type electrode and the P-type semiconductor. ### Claim 17 An electronic device, comprising a housing and a display panel disposed on the housing, the display panel comprises a backplane and a plurality of LED chips mounted on the backplane, wherein each of the plurality of LED chips comprises a first semiconductor layer, a second semiconductor layer, a first electrode electrically connected with the first semiconductor layer, and a second electrode electrically connected with the second semiconductor layer; the first electrode is in an annular shape and surrounds the second electrode; the first electrode and the second electrode cooperate to define a first channel there between, the first channel being in an annular shape; and the first electrode defines at least one second channel therein, the at least one second channel extends through an inner side and an outer side of the first electrode and communicates with the first channel. ### Claim 18 (depends on 17) The electronic device of claim 17, wherein the backplane is provided with a bonding electrode matched with the first electrode and the second electrode of the LED chip, the LED chip is flip-mounted on the backplane after being bonded with the bonding electrode through the first electrode and the second electrode. ### Claim 19 (depends on 17) The electronic device of claim 17, wherein the first electrode is disposed on a side of the first semiconductor layer close to the second semiconductor layer; the first semiconductor layer is an N-type semiconductor, the second semiconductor layer is a P-type semiconductor, the first electrode is an N-type electrode, and the second electrode is a P-type electrode; and the LED chip further comprises a current diffusion layer located between the P-type electrode and the P-type semiconductor. ### Claim 20 (depends on 17) The electronic device of claim 17, wherein the second electrode is disposed on a side of the second semiconductor layer away from the first semiconductor layer; the first semiconductor layer is a P-type semiconductor, the second semiconductor layer is an N-type semiconductor, the first electrode is a P-type electrode, and the second electrode is an N-type electrode; and the LED chip further comprises a current diffusion layer located between the P-type electrode and the P-type semiconductor.