# US 2021/0242378 A1 · Flip chip, surface light source, and display device using surface light source thereof

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- Number: US 2021/0242378 A1
- Document ID: US20210242378A1
- Status: Published application
- Kind: A1
- Application number: 16/972,620
- Filed: 2018-11-01
- Published: 2021-08-05
- Earliest claimed: 2018-09-27
- Assignees: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Applicants: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Inventors: Yong YANG
- Web page: https://patentgrep.com/patent/US20210242378A1

## CPC

- H10H 20/835: {Reflective materials}
- H10H 20/856: Reflecting means
- G02B 5/3058: {comprising electrically conductive elements, e.g. wire grids, conductive particles}
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10W 90/00: Package configurations
- H10H 20/8506: {Containers}
- H10H 20/872: {Periodic patterns for optical field-shaping, e.g. photonic bandgap structures}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A flip chip, a surface light source, and a display device using the surface light source are described. The flip chip comprises a metal grid layer having metal wire grid polarizers which are arranged in parallel; a wafer substrate arranged under the metal wire grid polarizer of the metal grid layer; a N-doped layer and a negative-electrode wire, wherein the N-doped layer and the negative-electrode wire are arranged under the wafer substrate; a quantum well layer arranged under the N-doped layer; a P-doped layer arranged under the quantum well layer; an optical activity material layer arranged under the P-doped layer; a reflecting layer arranged under the optical activity material layer; and a positive-electrode wire arranged under the reflecting layer. The present disclosure improves the light-emitting efficiency of the surface light source in large-angle direction and the visual angle range of the surface light source is expanded.

## Claims

### Claim 1

A flip chip, comprising:
a metal grid layer comprising a plurality of metal wire grid polarizers which are arranged in parallel;
a wafer substrate arranged under the metal wire grid polarizer of the metal grid layer;
a N-doped layer and a negative-electrode wire, wherein the N-doped layer and the negative-electrode wire are arranged under the wafer substrate;
a quantum well layer arranged under the N-doped layer;
a P-doped layer arranged under the quantum well layer;
an optical activity material layer arranged under the P-doped layer;
a reflecting layer arranged under the optical activity material layer; and
a positive-electrode wire arranged under the reflecting layer.

### Claim 2 (depends on 1)

The flip chip according to claim 1, wherein the flip chip is selected from a group consisting of a blue light flip chip, a red light flip chip, and a green light flip chip.

### Claim 3 (depends on 2)

The flip chip according to claim 2, wherein in relative to the wafer substrate, arrangement directions of the metal wire grid polarizers in the blue light flip chip are perpendicular to arrangement directions of the metal wire grid polarizers in the red light flip chip, or the arrangement directions of the metal wire grid polarizers in the blue light flip chip are perpendicular to arrangement directions of the metal wire grid polarizers in the green light flip chip.

### Claim 4 (depends on 1)

The flip chip according to claim 1, wherein the metal wire grid polarizers are nanowires, and the nanowires are selected from a group consisting of silver nanowires, copper nanowires, nickel nanowires, cobalt nanowires, aluminum nanowires, and aluminum oxide nanowires.

### Claim 5 (depends on 1)

The flip chip according to claim 1, wherein a distance between two adjacent metal wire grid polarizers ranges from 50 nm to 200 nm.

### Claim 6 (depends on 1)

The flip chip according to claim 1, wherein a thickness of the metal grid layer ranges from 50 nm to 100 nm.

### Claim 7 (depends on 1)

A surface light source using the flip chip as claimed in claim 1, the surface light source comprising:
a substrate;
a chip layer comprising a plurality of flip chips, wherein a gap is disposed between the flip chips;
a band-pass filter film arranged in the gap; and
an optical film layer arranged on the chip layer.

### Claim 8 (depends on 7)

The surface light source according to claim 7, wherein a plurality of blue light flip chips, red light flip chips, and green light flip chips are arranged in the chip layer.

### Claim 9 (depends on 8)

The surface light source according to claim 8, wherein arrangement directions of the metal wire grid polarizers in the blue light flip chip are perpendicular to these of the metal wire grid polarizers in the red light flip chip or the green light flip chip.

### Claim 10 (depends on 7)

A display device using the surface light source as claimed in claim 7, wherein the display device comprises the surface light source and a display panel is disposed above the surface light source.