# US 2021/0242374 A1 · Light-emitting element package > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242374 A1 - Document ID: US20210242374A1 - Status: Published application - Kind: A1 - Application number: 17/023,629 - Filed: 2020-09-17 - Published: 2021-08-05 - Earliest claimed: 2020-01-30 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Jin Sub LEE; Ju Yeon JEONG - Web page: https://patentgrep.com/patent/US20210242374A1 ## CPC - H10H 20/8512: {Wavelength conversion materials} - H10H 20/8513: {having two or more wavelength conversion materials} - H10H 20/8514: {characterised by their shape, e.g. plate or foil} - H10H 20/8515: {not being in contact with the bodies} - H10H 20/854: characterised by their material, e.g. epoxy or silicone resins - H10H 20/8252: {characterised by the dopants} - H10H 20/83: Electrodes - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 29/14: comprising multiple light-emitting semiconductor components - H10W 90/00: Package configurations - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light-emitting element package is provided. The light-emitting element package includes light-emitting structures spaced from each other, the light-emitting structures including first, second and third light-emitting structures, each of the light-emitting structures being configured to emit light of a first color; a first wavelength conversion layer provided on the first light-emitting structure at a first position corresponding to the first light-emitting structure, the first wavelength conversion layer being configured to convert light of the first color into light of a second color; a first oxide film provided on the first wavelength conversion layer; and a second wavelength conversion layer disposed in the first oxide film at a second position corresponding to the second light-emitting structure, the second wavelength conversion layer being configured to convert light of the first color into light of a third color. The first wavelength conversion layer and the second wavelength conversion layer have different structures. ## Claims ### Claim 1 A light-emitting element package comprising: a plurality of light-emitting structures spaced from each other in a first direction, the plurality of light-emitting structures comprising a first light-emitting structure, a second light-emitting structure and a third light-emitting structure, each of the plurality of light-emitting structures being configured to emit light of a first color; a first wavelength conversion layer provided on the first light-emitting structure at a first position corresponding to the first light-emitting structure, the first wavelength conversion layer being configured to convert light of the first color into light of a second color; a first oxide film provided on the first wavelength conversion layer; and a second wavelength conversion layer disposed in the first oxide film at a second position corresponding to the second light-emitting structure, the second wavelength conversion layer being configured to convert light of the first color into light of a third color, wherein the first wavelength conversion layer and the second wavelength conversion layer have different structures. ### Claim 2 (depends on 1) The light-emitting element package of claim 1, wherein the first wavelength conversion layer comprises a quantum dot structure, and wherein the second wavelength conversion layer comprises a quantum well structure. ### Claim 3 (depends on 1) The light-emitting element package of claim 1, wherein the first wavelength conversion layer does not overlap the second wavelength conversion layer along a second direction that crosses the first direction. ### Claim 4 (depends on 1) The light-emitting element package of claim 1, further comprising partition walls spaced apart from the first wavelength conversion layer in the first direction. ### Claim 5 (depends on 4) The light-emitting element package of claim 4, wherein the first wavelength conversion layer is interposed between two of the partition walls. ### Claim 6 (depends on 4) The light-emitting element package of claim 4, further comprising a first transmission layer spaced apart from the first wavelength conversion layer and the partition walls in the first direction. ### Claim 7 (depends on 1) The light-emitting element package of claim 1, wherein a top surface of the second wavelength conversion layer is substantially coplanar with a top surface of the first oxide film. ### Claim 8 (depends on 1) The light-emitting element package of claim 1, further comprising: a plurality of electrodes respectively corresponding to the plurality of light-emitting structures; and a first light conversion layer comprising the first wavelength conversion layer, wherein the plurality of light-emitting structures are interposed between the plurality of electrodes and the first light conversion layer, and wherein each of the plurality of electrodes includes electrode layers. ### Claim 9 (depends on 8) The light-emitting element package of claim 8, further comprising a second oxide film filled between the plurality of electrodes. ### Claim 10 (depends on 8) The light-emitting element package of claim 8, further comprising a buffer layer disposed on the first oxide film, wherein the first oxide film is interposed between the buffer layer and the first light conversion layer. ### Claim 11 (depends on 1) The light-emitting element package of claim 1, wherein the second wavelength conversion layer comprises a GaN-based material. ### Claim 12 A light-emitting element package comprising: a plurality of light-emitting structures spaced from each other in a first direction, the plurality of light-emitting structures comprising a first light-emitting structure, a second light-emitting structure and a third light-emitting structure, each of the plurality of light-emitting structures being configured to emit light of a first color; and a light conversion layer disposed on the plurality of light-emitting structures, the light conversion layer comprising a first wavelength conversion layer disposed at a first location corresponding to the first light-emitting structure and a second wavelength conversion layer disposed at a second location corresponding to the second light-emitting structure, wherein the first wavelength conversion layer comprises a quantum dot and is configured to convert light of the first color into light of a second color, and wherein the second wavelength conversion layer comprises a quantum well and is configured to convert light of the first color into light of a third color. ### Claim 13 (depends on 12) The light-emitting element package of claim 12, wherein the quantum dot does not overlap the quantum well along a second direction that crosses the first direction. ### Claim 14 (depends on 12) The light-emitting element package of claim 12, further comprising partition walls, wherein the quantum dot is interposed between two of the partition walls. ### Claim 15 (depends on 14) The light-emitting element package of claim 14, wherein the partition walls comprise a metal. ### Claim 16 (depends on 12) The light-emitting element package of claim 12, wherein the quantum well comprises a GaN-based material. ### Claim 17 A light-emitting element package comprising: a plurality of electrodes disposed in a first oxide film; a plurality of light-emitting structures disposed on the first oxide film, the plurality of light-emitting structures being spaced from each other in a first direction, emitting light of a first color, and comprising a first light-emitting structure, a second light-emitting structure and a third light-emitting structure; a first light conversion layer disposed on the plurality of light-emitting structures, the first light conversion layer comprising a quantum dot at a first position corresponding to the first light-emitting structure and partition walls; and a second light conversion layer disposed on the first light conversion layer, the second light conversion layer comprising a second oxide film and a quantum well at a second position corresponding to the second light-emitting structure, wherein the quantum dot is configured to convert light of the first color into light of a second color, wherein the quantum well is configured to convert light of the first color into light of a third color, wherein the quantum dot is interposed between two of the partition walls, and wherein the quantum dot and the quantum well do not overlap each other in a second direction that crosses the first direction. ### Claim 18 (depends on 17) The light-emitting element package of claim 17, further comprising a buffer layer disposed on the second light conversion layer, wherein the second light conversion layer is interposed between the buffer layer and the first light conversion layer. ### Claim 19 (depends on 17) The light-emitting element package of claim 17, wherein the quantum well comprises a GaN-based material. ### Claim 20 (depends on 17) The light-emitting element package of claim 17, wherein a top surface of the quantum well is substantially coplanar with a top surface of the second oxide film.