# US 2021/0242371 A1 · Single chip multi band led > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242371 A1 - Document ID: US20210242371A1 - Status: Published application - Kind: A1 - Application number: 17/165,177 - Filed: 2021-02-02 - Published: 2021-08-05 - Earliest claimed: 2020-02-04 - Assignees: Seoul Viosys Co., Ltd. - Applicants: Seoul Viosys Co., Ltd. - Inventors: Yong Hyun BAEK; Ji Hun KANG; Chae Hon KIM; Ji Hoon PARK - Web page: https://patentgrep.com/patent/US20210242371A1 ## CPC - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/817: characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous - H10H 20/825: containing nitrogen, e.g. GaN - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level. ## Claims ### Claim 1 A light emitting diode, comprising: an n-type nitride semiconductor layer; a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit; an active layer located on the V-pit generation layer; and a p-type nitride semiconductor layer located above the active layer, wherein: the active layer includes a well layer, the well layer including a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer, and the light emitting diode emits light having at least two peak wavelengths at a single chip level without using phosphor. ### Claim 2 (depends on 1) The light emitting diode of claim 1, wherein the first well layer portion emits light having a first peak wavelength, and the second well layer portion emits light having at least one second peak wavelength. ### Claim 3 (depends on 2) The light emitting diode of claim 2, wherein: the first well layer portion emits light having a yellow peak wavelength, and the second well layer portion emits light having a blue peak wavelength. ### Claim 4 (depends on 2) The light emitting diode of claim 2, wherein: the first well layer portion emits light having a yellow peak wavelength, and the second well layer portion emits light having a blue peak wavelength and light having a green peak wavelength. ### Claim 5 (depends on 1) The light emitting diode of claim 1, wherein the first well layer portion has a higher Indium (In) content than that of the second well layer portion. ### Claim 6 (depends on 5) The light emitting diode of claim 5, wherein the first well layer portion is thicker than the second well layer portion. ### Claim 7 (depends on 1) The light emitting diode of claim 1, further comprising: a p-type AlxGa1-xN layer interposed between the active layer and the p-type nitride semiconductor layer, wherein a composition ratio x of Al in the p-type AlxGa1-xN layer is greater than 0 and less than 0.3. ### Claim 8 (depends on 7) The light emitting diode of claim 7, wherein the p-type AlxGa1-xN layer has a thickness of less than 100 nm. ### Claim 9 (depends on 1) The light emitting diode of claim 1, wherein the V-pit generation layer has a thickness exceeding 450 nm. ### Claim 10 (depends on 9) The light emitting diode of claim 9, wherein the V-pit formed in the V-pit generation layer include a V-pit having a width of an inlet exceeding 230 nm. ### Claim 11 (depends on 1) The light emitting diode of claim 1, wherein: the active layer has a multiple quantum well structure having a plurality of well layers and a plurality of barrier layers, the active layer further includes a capping layer covering the well layer and interposed between the well layer and the barrier layer, and the capping layer contains Al. ### Claim 12 (depends on 11) The light emitting diode of claim 11, wherein the capping layer contains ten (10) atomic % or more of Al with respect to a total Al composition in the capping layer. ### Claim 13 (depends on 1) The light emitting diode of claim 1, wherein the p-type nitride semiconductor layer includes a concave portion on the V-pit. ### Claim 14 (depends on 1) The light emitting diode of claim 1, wherein the active layer contacts the V-pit generation layer. ### Claim 15 A light emitting diode, comprising: an n-type nitride semiconductor layer; a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit; an active layer located on the V-pit generation layer; a p-type AlGaN layer located on the active layer; and a p-type nitride semiconductor layer located on the p-type AlGaN layer, wherein: the active layer includes a well layer, the well layer including a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer, and the first well layer portion emit light having a first peak wavelength and the second well layer portion emit light having a second peak wavelength different from the first peak wavelength; wherein the light emitting diode includes no phosphor. ### Claim 16 (depends on 15) The light emitting diode of claim 15, wherein the second well layer portion emits light having a shorter wavelength than that of light emitted from the first well layer portion. ### Claim 17 (depends on 16) The light emitting diode of claim 16, wherein the second well layer portion emits light having at least two peak wavelengths, the two peak wavelengths being different from the first peak wavelength. ### Claim 18 (depends on 15) The light emitting diode of claim 15, wherein the p-type AlGaN layer is represented by a general formula of AlxGa1-xN, and a composition ratio x of Al in the p-type AlGaN layer is greater than 0 and less than 0.3. ### Claim 19 (depends on 18) The light emitting diode of claim 18, wherein the p-type AlGaN layer has a thickness of less than 100 nm. ### Claim 20 (depends on 15) The light emitting diode of claim 15, wherein: the V-pit generation layer has a thickness exceeding 450 nm, and the V-pit formed in the V-pit generation layer include a V-pit having a width of an inlet exceeding 230 nm.