# US 2021/0242370 A1 · Semiconductor light emitting device and display apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242370 A1 - Document ID: US20210242370A1 - Status: Published application - Kind: A1 - Application number: 17/032,332 - Filed: 2020-09-25 - Published: 2021-08-05 - Earliest claimed: 2020-02-03 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Donggun LEE; Gibum KIM; Joosung KIM; Jonguk SEO - Web page: https://patentgrep.com/patent/US20210242370A1 ## CPC - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10H 20/01: Manufacture or treatment - H10H 20/817: characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10W 90/00: Package configurations - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10H 20/018: {Bonding of wafers} - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/8314: {extending at least partially onto an outer side surface of the bodies} - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer. ## Claims ### Claim 1 A semiconductor light emitting device, comprising: a light emitting structure in a form of a rod, the light emitting structure including: a first conductivity-type semiconductor layer, the first conductivity-type semiconductor layer defining a first surface of the light emitting structure, an active layer, a second conductivity-type semiconductor layer, the second conductivity-type semiconductor layer defining a second surface of the light emitting structure opposite the first surface, and a side surface of the light emitting structure connecting the first and second surfaces and being perpendicular to the first and second surfaces; a regrowth semiconductor layer surrounding an entirety of the side surface of the light emitting structure, the regrowth semiconductor layer having a first thickness at a first position along a perimeter of the side surface and a second thickness, different from the first thickness, at a second position along the perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer. ### Claim 2 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein the side surface of the light emitting structure and an external side surface of the regrowth semiconductor layer have different shapes along a cross-section perpendicular to the side surface and the external side surface. ### Claim 3 (depends on 2) The semiconductor light emitting device as claimed in claim 2, wherein the side surface of the light emitting structure is circular in the cross-section, and the external side surface of the regrowth semiconductor layer is hexagonal in the cross-section. ### Claim 4 (depends on 2) The semiconductor light emitting device as claimed in claim 2, wherein the side surface of the light emitting structure is tetragonal in the cross-section, and the external side surface of the regrowth semiconductor layer is octagonal in the cross-section. ### Claim 5 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein an external side surface of the regrowth semiconductor layer is formed of crystallographic planes. ### Claim 6 (depends on 5) The semiconductor light emitting device as claimed in claim 5, wherein the external side surface of the regrowth semiconductor layer is formed of equivalent crystallographic planes. ### Claim 7 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein the first electrode is in contact with a lower surface of the regrowth semiconductor layer. ### Claim 8 (depends on 7) The semiconductor light emitting device as claimed in claim 7, wherein the second electrode is in contact with an upper surface of the regrowth semiconductor layer. ### Claim 9 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein a thickness of the regrowth semiconductor layer is about 1 nm to about 100 nm. ### Claim 10 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein a diameter of the light emitting structure is about 0.2 μm to about 100 μm. ### Claim 11 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein an aspect ratio of the light emitting structure is about 2 to about 100. ### Claim 12 A semiconductor light emitting device, comprising: a light emitting structure in a form of a rod, the light emitting structure including: a first conductivity-type semiconductor layer, the first conductivity-type semiconductor layer defining a first surface of the light emitting structure, an active layer, a second conductivity-type semiconductor layer, the second conductivity-type semiconductor layer defining a second surface of the light emitting structure opposite the first surface, and a side surface of the light emitting structure connecting the first and second surfaces and being perpendicular to the first and second surfaces; a regrowth semiconductor layer surrounding an entirety of the side surface of the light emitting structure, the regrowth semiconductor layer having an external side surface formed of crystallographic planes; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer, wherein the side surface of the light emitting structure and the external side surface of the regrowth semiconductor layer have different shapes in a cross-section perpendicular to the side surface and the external side surface. ### Claim 13 (depends on 12) The semiconductor light emitting device as claimed in claim 12, wherein the regrowth semiconductor layer has a non-constant thickness along a perimeter of the light emitting structure. ### Claim 14 (depends on 12) The semiconductor light emitting device as claimed in claim 12, wherein the external side surface of the regrowth semiconductor layer is formed of a single equivalent crystallographic plane or two equivalent crystallographic planes. ### Claim 15 (depends on 12) The semiconductor light emitting device as claimed in claim 12, wherein the side surface of the light emitting device is not defined by a crystallographic plane. ### Claim 16 (depends on 12) The semiconductor light emitting device as claimed in claim 12, wherein the external side surface of the regrowth semiconductor layer and the side surface of the light emitting structure are perpendicular to the first and second surfaces. ### Claim 17 (depends on 1) A display apparatus, comprising: first and second electrode parts in each of a plurality of pixel regions and spaced apart from each other; and the semiconductor light emitting device as claimed in claim 1, the semiconductor light emitting device being between the first and second electrode parts. ### Claim 18 A display apparatus, comprising: a circuit board including driving circuits to drive pixel regions; semiconductor light emitting devices spaced apart from each other on the circuit board, the semiconductor light emitting devices defining the pixel regions; wavelength conversion parts on first surfaces of the semiconductor light emitting devices; and a partition wall surrounding side surfaces of the wavelength conversion parts and having a partitioning structure separating the wavelength conversion parts, wherein each of the semiconductor light emitting devices includes: a light emitting structure in a form of a rod, the light emitting structure including: a first conductivity-type semiconductor layer, the first conductivity-type semiconductor layer defining a first surface of the light emitting structure, an active layer, a second conductivity-type semiconductor layer, the second conductivity-type semiconductor layer defining a second surface of the light emitting structure opposite the first surface of the light emitting structure, and a side surface of the light emitting structure connecting the first and second surfaces and being perpendicular to the first and second surfaces; a regrowth semiconductor layer surrounding an entirety of the side surface of the light emitting structure, the regrowth semiconductor layer having an external side surface formed of crystallographic planes; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer, wherein the side surface of the light emitting structure and the external side surface of the regrowth semiconductor layer have different shapes in a cross-section perpendicular to the side surface and the external side surface. ### Claim 19 (depends on 18) The display apparatus as claimed in claim 18, wherein the partition wall is connected to the first electrode and extends to be adjacent to an upper surface of the circuit board in a length direction of the light emitting structures. ### Claim 20 (depends on 18) The display apparatus as claimed in claim 18, further comprising a molding part between the partition wall and the semiconductor light emitting devices to surround the semiconductor light emitting devices.