# US 2021/0242367 A1 · Optoelectronic semiconductor device comprising a first and a second current spreading structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242367 A1 - Document ID: US20210242367A1 - Status: Published application - Kind: A1 - Application number: 17/053,800 - Filed: 2019-05-08 - Published: 2021-08-05 - Earliest claimed: 2018-05-09 - Assignees: OSRAM OLED GmbH - Applicants: Osram OLED GmbH - Inventors: Michael VÖLKL; Siegfried HERRMANN - Web page: https://patentgrep.com/patent/US20210242367A1 ## CPC - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors - H10H 20/8512: {Wavelength conversion materials} - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract An optoelectronic semiconductor device may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and an insulating intermediate layer. The second semiconductor layer may be arranged over a substrate. The first semiconductor layer may be arranged between the second semiconductor layer and the substrate. The first current spreading structure may be electrically connected to the first semiconductor layer, and the second current spreading structure electrically may be connected to the second semiconductor layer. The insulating intermediate layer may include a dielectric mirror and may be arranged between the second current spreading structure and the second semiconductor layer. The current spreading structures may overlap one another in a plane perpendicular to a main surface of the substrate. The first current spreading structure may be arranged at a larger distance from the first semiconductor layer than the second current spreading structure. ## Claims ### Claim 1 An optoelectronic semiconductor device comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged over a substrate; wherein the first semiconductor layer is arranged between the second semiconductor layer and the substrate; a first current spreading structure electrically connected to the first semiconductor layer; a second current spreading structure electrically connected to the second semiconductor layer; wherein the first current spreading structure is arranged at a larger distance from the first semiconductor layer than the second current spreading structure; an insulating intermediate layer arranged between the second current spreading structure and the second semiconductor layer; wherein the insulating intermediate layer comprises a dielectric mirror layer, and wherein the first current spreading structure and the second current spreading structure overlap one another in a plane perpendicular to a main surface of the substrate; and wherein the optoelectronic semiconductor device configured to emit radiation via a main surface of the optoelectronic semiconductor device facing away from the substrate. ### Claim 2 (canceled) ### Claim 3 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the insulating intermediate layer is interrupted in sections. ### Claim 4 (canceled) ### Claim 5 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the first dielectric mirror layer directly contacts the second current spreading structure. ### Claim 6 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the first current spreading structure is connected to the first semiconductor layer via contact elements. ### Claim 7 (depends on 6) The optoelectronic semiconductor device according to claim 6, wherein the contact elements penetrate the second current spreading structure. ### Claim 8 (depends on 6) The optoelectronic semiconductor device according to claim 6, further comprising a vertical dielectric mirror layer arranged on the side walls of the contact elements. ### Claim 9 (depends on 1) The optoelectronic semiconductor device according to claim 1, further comprising a first transparent conductive layer in an area outside the first current spreading structure and the second current spreading structure. ### Claim 10 (depends on 7) The optoelectronic semiconductor device according to claim 7, wherein the first transparent conductive layer is arranged in a plane between the first current spreading structure and the second current spreading structure. ### Claim 11 (depends on 10) The optoelectronic semiconductor device according to claim 10, further comprising: a second transparent conductive layer arranged between the second semiconductor layer and the first transparent conductive layer; and an insulating intermediate layer arranged between the first transparent conductive layer and the second transparent conductive layer. ### Claim 12 (depends on 1) The optoelectronic semiconductor device according to claim 1, further comprising a second dielectric mirror layer arranged between the first current spreading structure and the second current spreading structure. ### Claim 13 (depends on 12) The optoelectronic semiconductor device according to claim 12, wherein the second dielectric mirror layer directly contacts the first current spreading structure. ### Claim 14 (depends on 1) The optoelectronic semiconductor device according to claim 1, further comprising a third dielectric mirror layer arranged over the first current spreading structure. ### Claim 15 (depends on 1) The optoelectronic semiconductor device according to claim 1, further comprising an insulating layer between the first current spreading structure and the second current spreading structure, the insulating layer comprising a converter material. ### Claim 16 (depends on 15) The optoelectronic semiconductor device according to claim 15, wherein the converter material comprises quantum dots, quantum wells, quantum wires, or combinations thereof. ### Claim 17 (depends on 15) The optoelectronic semiconductor device according to claim 15, wherein the converter material comprises an epitaxially grown semiconductor layer. ### Claim 18 (depends on 1) The optoelectronic semiconductor device according to claim 1, further comprising a nanostructured outcoupling layer over the second semiconductor layer. ### Claim 19 (canceled) ### Claim 20 (depends on 1) The optoelectronic semiconductor device according to claim 1, further comprising: a first contact region contacting the first current spreading structure; and a second contact region contacting the second current spreading structure, wherein the first protrude from a surface of the optoelectronic semiconductor device. ### Claim 21 (depends on 1) An optoelectronic device comprising: an optoelectronic semiconductor device according to claim 1; and a carrier, wherein the optoelectronic semiconductor device is connected to the carrier in such a manner that the second semiconductor layer is arranged at a shorter distance from the carrier than the first semiconductor layer.