# US 2021/0242357 A1 · Metal-halide semiconductor optical and electronic devices and methods of making the same

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- Number: US 2021/0242357 A1
- Document ID: US20210242357A1
- Status: Published application
- Kind: A1
- Application number: 15/733,769
- Filed: 2019-04-26
- Published: 2021-08-05
- Earliest claimed: 2018-04-27
- Assignees: University of Washington
- Applicants: University of Washington
- Inventors: Daniel R. GAMELIN; Daniel M. KROUPA; Tyler J. MILSTEIN; Sidney E. CREUTZ; Matthew J. CRANE; Joo Yeon ROH
- Web page: https://patentgrep.com/patent/US20210242357A1

## CPC

- H10F 77/45: Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
- C09K 11/06: containing organic luminescent materials
- C09K 11/664: {Halogenides (C09K11/661 takes precedence)}
- C09K 11/7705: {with alkali or alkaline earth metals}
- C09K 11/7773: {with alkali or alkaline earth metal}
- H10F 77/315: {the coatings being antireflective or having enhancing optical properties}
- H10H 20/8512: {Wavelength conversion materials}
- H10K 30/87: Light-trapping means
- H10K 85/50: Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
- C09K 2211/188: of other metals not provided for in one of the previous groups
- Y02E 10/52: PV systems with concentrators
- Y02E 10/549: Organic PV cells
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

Compositions of matter, downconversion layers including the compositions of matter, and devices including the compositions of matter are described. In an embodiment, the compositions of matter are downconversion materials configured to absorb a quantum of energy of a first energy and, in response, emit two or more quanta of energy of a second energy less than the first energy. Methods of making and depositing downconversion materials are also described. Downconversion precursor mixtures suitable for making downconversion materials and methods of making the same are also described.

## Claims

### Claim at position 1

-69. (canceled)

### Claim 70

A device comprising:
a first layer; and
a composition disposed on the first layer, the composition having a chemical formula selected from the group of formulae consisting of one or more of:
M:ABX3;
M:AB2X5;
M:A4BX6;
M:C2DX5;
M:A2CDX6; or
combinations thereof;
wherein:
A is at least one cation selected from the group consisting of Li+, Na+, K+, Rb+, Cs+, methylammonium (MA), formamidinium (FA), guanidinium, dimethylammonium, trimethylammonium, and combinations thereof,
B is at least one cation selected from the group consisting of Pb2+, Sn2+, Ge2+, Cd2+, Mg2+, Ti2+, Hg2+, and combinations thereof,
C is at least one cation selected from the group consisting of Ag+, Cu+, Sn+, Na+, K+, Tl+, Au+, and combinations thereof,
D is at least one cation selected from the group consisting of In3+, Bi3+, Sb3+, Au3+, and combinations thereof,
X is at least one anion selected from the group consisting of O−, F−, Cl−, Br−, I− CN−, and combinations thereof, and
M is at least one cation selected from the group consisting of Y3+, La3+, Ce3+, Pr3+, Nd3+, Pm3+, Sm3+, Eu3+, Gd3+, Tb3+, Dy3+, Ho3+, Er3+, Tm3+, Yb3+, Lu3+, Sc3+, Fe3+, Al3+, V2+, Cr2+, Mn2+, Bi3+, and combinations thereof.

### Claim 71 (depends on 70)

The device of claim 70, wherein the composition disposed on the first layer is a conformal coating.

### Claim 72 (depends on 71)

The device of claim 71, wherein the first layer is a textured silicon solar cell.

### Claim 73 (depends on 70)

The device of claim 70, comprising a solar cell;
wherein the first layer is glass.

### Claim 74 (depends on 70)

The device of claim 70, comprising a second layer;
wherein the first layer includes at least one of a solar cell layer or a glass layer; and
wherein the composition is a vapor deposition layer and comprises a film situated between the first layer and the second layer.

### Claim 75 (depends on 70)

The device of claim 70, wherein the composition is disposed in a layer having a thickness of 50 nm to 1000 nm.

### Claim 76 (depends on 70)

The device of claim 70, wherein the composition is selected from the group consisting of Yb3+:CsPbCl3, Yb3+:CsPb(Cl1-xBrx)3, Yb3+:CsSnCl3, Yb3+:CsSn(Cl1-xBrx)3, Yb3+:RbPbCl3, Yb3+:RbPb(Cl1-xBrx)3, Yb3+:(Rb1-xCsx)Pb(Cl1-xBrx)3, Yb3+:FAPbCl3, Yb3+:FAPb(Cl1-xBrx)3, Yb3+:(FA1-xCsx)PbCl3, Yb3+:(FA1-xCsx)Pb(Cl1-xBrx)3, Yb′:(Rb1-xixCsx)(Pb1-xSnx)(Cl1-xBrx)3, Yb3+:Cs2PbCl2I2, Yb3+:Cs2SnCl2I2, Yb3+:Cs2AgBiCl6, Yb3+:Cs2AgBiBr6, Yb3+:Cs2AgBi(Cl1-xBrx)6, Yb3+:Cs2AgInCl6, Yb3+:Cs2AgIn(Cl1-xBrx)6, wherein x is a number between 0 and 1.

### Claim 77 (depends on 70)

The device of claim 70, wherein M substitutes for B or D in a crystalline lattice of the composition.

### Claim 78 (depends on 77)

The device of claim 77, wherein the inclusion of M is associated with a defect of the crystalline lattice configured to conserve charge.

### Claim 79 (depends on 70)

The device of claim 70, wherein a molar ratio of M/(B+M) is in a range of 0% to 49% or a molar ratio of M/(D+M) is in a range of 0% to 49%.

### Claim 80 (depends on 70)

The device of claim 70, wherein the composition comprises a plurality of M cations, and wherein M cations of the plurality of M cations are inhomogeneously distributed within the composition.

### Claim 81 (depends on 70)

The device of claim 70, wherein the composition is configured to emit light of a first wavelength after absorption of light of a second wavelength that is different than the first wavelength.

### Claim 82 (depends on 81)

The device of claim 81, wherein the emitted light is as a result of dopant emission.

### Claim 83 (depends on 82)

The device of claim 82, wherein a quantum yield of the composition is in a range of 0% to 200%.

### Claim 84 (depends on 70)

The device of claim 70, wherein the device is one or more of a photovoltaic cell, a photovoltaic module, a photodetector, a light-emitting diode, and/or a laser.

### Claim 85 (depends on 70)

The device of claim 70, wherein the composition is configured to emit quanta of energy, the device further comprising an active material configured to receive the quanta of energy emitted from the composition.

### Claim 86 (depends on 85)

The device of claim 85, further comprising a spacer layer disposed between the composition and the active material.

### Claim 87 (depends on 70)

The device of claim 70, further comprising a selective reflector configured to allow photons in wavelength range incident upon the selective reflector to pass through to the composition and to reflect or scatter photons incident upon the selective reflector and outside of the wavelength range.

### Claim 88 (depends on 87)

The device of claim 87, wherein the selective reflector is positioned to direct the quanta of energy emitted by the composition to the active layer.

### Claim 89 (depends on 70)

The device of claim 70, wherein the device is a photovoltaic cell.