# US 2021/0242352 A1 · Diode structure and manufacturing method thereof

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2021/0242352 A1
- Document ID: US20210242352A1
- Status: Published application
- Kind: A1
- Application number: 16/917,248
- Filed: 2020-06-30
- Published: 2021-08-05
- Earliest claimed: 2020-02-05
- Assignees: Mosel Vitelic, Inc.
- Applicants: Mosel Vitelic Inc.
- Inventors: Hsiu-Fang Lo; Yu-Hsuan Chang
- Web page: https://patentgrep.com/patent/US20210242352A1

## CPC

- H10D 8/25: Zener diodes
- H10D 8/022: {of Zener diodes}
- H10D 8/045: {of PN junction diodes}
- H10D 62/124: {Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions}
- H10D 62/125: {Shapes of junctions between the regions}
- H10D 62/60: Impurity distributions or concentrations
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/21: {of electrically active species}
- H10P 30/22: using masks
- H10P 30/222: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)}
- H10P 30/28: characterised by an annealing step, e.g. for activation of dopants
- H10P 32/1406: {by ion implantation}
- H10P 32/171: {being group IV material}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A diode structure and a manufacturing method are disclosed. The diode structure includes a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and an epitaxy layer. The semiconductor substrate includes a first surface. The first semiconductor layer and the second semiconductor layer are extended toward the interior of the semiconductor substrate from the first surface by implanting a dopant. Both of the semiconductor types of the first semiconductor layer and the second semiconductor layer are opposite to the semiconductor type of the semiconductor substrate. The epitaxy layer is formed on the first surface, connected with the first semiconductor layer and the second semiconductor layer and extended outwardly from the first surface. The first semiconductor layer and the second semiconductor layer are connected with each other, continuously. The concentration distribution of the dopant within the first semiconductor layer and the second semiconductor layer is in a discontinuous curve.

## Claims

### Claim 1

A diode structure, comprising:
a semiconductor substrate comprising a first surface;
a first semiconductor layer extended toward the interior of the semiconductor substrate from the first surface of the semiconductor substrate by implanting a dopant, wherein the semiconductor type of the first semiconductor layer is opposite to the semiconductor type of the semiconductor substrate;
a second semiconductor layer extended toward the interior of the semiconductor substrate from the first surface of the semiconductor substrate by implanting the dopant, wherein the semiconductor type of the second semiconductor layer is opposite to the semiconductor type of the semiconductor substrate;
an epitaxy layer formed on the first surface of the semiconductor substrate, connected with the first semiconductor layer and the second semiconductor layer and extended outwardly from the first surface;
wherein the first semiconductor layer and the second semiconductor layer are connected with each other, continuously, and the concentration distribution of the dopant within the first semiconductor layer and the second semiconductor layer is in a discontinuous curve.

### Claim 2 (depends on 1)

The diode structure according to claim 1, wherein the second semiconductor layer is formed within the first semiconductor layer and is surrounded by the first semiconductor layer in the semiconductor substrate.

### Claim 3 (depends on 1)

The diode structure according to claim 1, wherein the discontinuous curve has an inflection point, and the inflection point is corresponding to the connecting surface between the first semiconductor layer and the second semiconductor layer, wherein the concentration of the dopant within the first semiconductor layer is lower than the concentration of the dopant within the second semiconductor layer.

### Claim 4 (depends on 1)

The diode structure according to claim 1, wherein the semiconductor substrate is a P+ type semiconductor layer, both of the first semiconductor layer and the second semiconductor layer are N+ type semiconductor layers, and the epitaxy layer is a N− type semiconductor layer.

### Claim 5 (depends on 1)

The diode structure according to claim 1, wherein the dopant is antimony ion.

### Claim 6 (depends on 1)

The diode structure according to claim 1, wherein the diode structure is a zener diode and is employed in an ultra-low capacitance transient voltage suppression device.

### Claim 7

A manufacturing method of a diode structure, comprising steps of:
(a) providing a semiconductor substrate, wherein the semiconductor substrate comprises a first surface;
(b) disposing at least one photoresist on the first surface of the semiconductor substrate;
(c) implanting a dopant from the first surface of the semiconductor substrate to form a first semiconductor layer, wherein the semiconductor type of the first semiconductor layer is opposite to the semiconductor type of the semiconductor substrate;
(d) removing the photoresist and diffusing the first semiconductor layer in the semiconductor substrate;
(e) disposing the at least one photoresist on the first surface of the semiconductor substrate;
(f) implanting the dopant from the first surface of the semiconductor substrate to form a second semiconductor layer within the first semiconductor layer, wherein the semiconductor type of the second semiconductor layer is opposite to the semiconductor type of the semiconductor substrate;
(g) removing the photoresist and diffusing the first semiconductor layer and the second semiconductor layer in the semiconductor substrate; and
(h) forming an epitaxy layer on the first surface of the semiconductor substrate.

### Claim 8 (depends on 7)

The manufacturing method of the diode structure according to claim 7, wherein both of the steps (c) and (f) are performed through an implanting process for implanting the dopant, and the operating parameter of the implanting process comprises a specific energy, a specific dose and a specific angle, wherein the specific energy is greater than 50 keV, the specific dose is more than 1.0×1015/cm2, and the specific angle is 7 degrees.

### Claim 9 (depends on 7)

The manufacturing method of the diode structure according to claim 7, wherein both of the steps (d) and (g) are performed through a drive-in process for diffusing the first semiconductor layer and the second semiconductor layer in the semiconductor substrate, and the operating parameter of the drive-in process comprises a specific temperature and specific time, wherein the specific temperature is higher than 1100° C., and the specific time is longer than 50 minutes.

### Claim 10 (depends on 7)

The manufacturing method of the diode structure according to claim 7, wherein the at least one photoresist is disposed on the same position upon the first surface in the steps (b) and (e).