# US 2021/0242348 A1 · Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242348 A1 - Document ID: US20210242348A1 - Status: Published application - Kind: A1 - Application number: 17/218,830 - Filed: 2021-03-31 - Published: 2021-08-05 - Earliest claimed: 2005-10-20 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: Ryo Hayashi; Masafumi Sano; Katsumi Abe; Hideya Kumomi; Kojiro Nishi - Web page: https://patentgrep.com/patent/US20210242348A1 ## CPC - H10D 30/6723: {having light shields} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 30/6756: {Amorphous oxide semiconductors} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT] - H10K 59/126: Shielding, e.g. light-blocking means over the TFTs - H10K 2102/311: {Flexible OLED} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate. ## Claims ### Claim at position 1 1-20. (canceled) ### Claim 21 A display, comprising: a metal layer; an insulating member being in contact with the metal layer; a field-effect transistor, the field-effect transistor comprising a gate electrode disposed on the insulating member on the opposite side where the metal layer is provided, a gate insulating layer contacting the gate electrode, an active layer disposed on the gate insulating layer on the opposite side where the gate electrode is provided, a source electrode and a drain electrode, the source electrode and the drain electrode being in contact with the active layer; and a light-emitting device comprising a light-emitting layer and a pair of electrodes between which the light-emitting layer is interposed, one electrode of the pair of electrodes being electrically connected to the field-effect transistor, wherein the active layer includes an amorphous oxide, has a light transmittance of 70% or more in a wavelength range of 400 to 800 nm, and generates photocarriers by irradiation with light having a wavelength range of 500 nm or more, the metal layer shields light in a wavelength range of 400 to 800 nm and configured to suppress a current flowing between the source electrode and the drain electrode, the current being derived from the photocarriers, the gate electrode, the source electrode and the drain electrode include metal material, the metal layer is not electrically connected with the gate electrode, a part of the metal layer and a region of the active layer between the source electrode and the drain electrode overlap each other as viewed from a direction perpendicular to the metal layer, an interlayer-insulating layer is provided between the light-emitting device and the field-effect transistor, the one electrode of the pair of electrodes and the field-effect transistor are connected via a contact hole provided in the interlayer-insulating layer, and a current flowing into the light-emitting device is controlled by a voltage imposed to the gate electrode of the filed-effect transistor. ### Claim 22 (depends on 21) The display according to claim 21, wherein the metal layer is a multilayer film composed of different materials. ### Claim 23 (depends on 21) The display according to claim 21, wherein the active layer is an amorphous oxide including In, Ga and Zn or an amorphous oxide including Sn, In and Zn. ### Claim 24 (depends on 21) The display according to claim 21, wherein the field-effect transistor is a normally-off type transistor, and the active layer has an electronic carrier concentration of lower than 1018/cm3. ### Claim 25 (depends on 23) The display according to claim 23, wherein the active layer is the amorphous oxide including Sn, In and Zn, and contains 15 at % or more of In as an atomic ratio. ### Claim 26 A display, comprising: a metal layer; an insulating member being in contact with the metal layer; a field-effect transistor, the field-effect transistor comprising a gate electrode disposed on the insulating member on the opposite side where the metal layer is provided, a gate insulating layer contacting the gate electrode, an active layer disposed on the gate insulating layer on the opposite side where the gate electrode is provided, a source electrode and a drain electrode, the source electrode and the drain electrode being in contact with the active layer; and a light-emitting device comprising a light-emitting layer and a pair of electrodes between which the light-emitting layer is interposed, wherein the active layer includes an amorphous oxide, has a light transmittance of 70% or more in a wavelength range of 400 to 800 nm, and generates photocarriers by irradiation with light having a wavelength range of 500 nm or more, the metal layer shields light in a wavelength range of 400 to 800 nm and configured to suppress a current flowing between the source electrode and the drain electrode, the current being derived from the photocarriers, the gate electrode, the source electrode and the drain electrode include metal material, the metal layer is not electrically connected with the gate electrode, a part of the metal layer and a region of the active layer between the source electrode and the drain electrode overlap each other as viewed from a direction perpendicular to the metal layer, and the filed-effect transistor is a switching element. ### Claim 27 (depends on 26) The display according to claim 26, wherein the metal layer is a multilayer film composed of different materials. ### Claim 28 (depends on 26) The display according to claim 26, wherein the active layer is an amorphous oxide including In, Ga and Zn or an amorphous oxide including Sn, in and Zn. ### Claim 29 (depends on 26) The display according to claim 26, wherein the field-effect transistor is a normally-off type transistor, and the active layer has an electronic carrier concentration of lower than 1018/cm3. ### Claim 30 (depends on 28) The display according to claim 28, wherein the active layer is the amorphous oxide including Sn, In and Zn, and contains 15 at % or more of In as an atomic ratio. ### Claim 31 A display, comprising: a metal layer; an insulating member being in contact with the metal layer; a field-effect transistor, the field-effect transistor comprising an active layer disposed on the insulating member on the opposite side where the metal layer is provided, a gate electrode disposed, via a gate insulating layer, on the active layer on the opposite side where the insulating member is provided, a source electrode and a drain electrode, the source electrode and the drain electrode being disposed on the active layer on the same side as the gate electrode, and being in contact with the active layer; and a light-emitting device comprising a light-emitting layer and a pair of electrodes between which the light-emitting layer is interposed, one electrode of the pair of electrodes being electrically connected to the field-effect transistor, wherein the active layer includes an amorphous oxide, has a light transmittance of 70% or more in a wavelength range of 400 to 800 nm, and generates photocarriers by irradiation with light having a wavelength range of 500 nm or more, the metal layer shields light in a wavelength range of 400 to 800 nm and configured to suppress a current flowing between the source electrode and the drain electrode, the current being derived from the photocarriers, the gate electrode, the source electrode and the drain electrode include metal material, the metal layer is not electrically connected with the gate electrode, a part of the metal layer and a region of the active layer between the source electrode and the drain electrode overlap each other as viewed from a direction perpendicular to the metal layer, an interlayer-insulating layer is provided between the light-emitting device and the field-effect transistor, the one electrode of the pair of electrodes and the field-effect transistor are connected via a contact hole provided in the interlayer-insulating layer, and a current flowing into the light-emitting device is controlled by a voltage imposed to the gate electrode of the filed-effect transistor. ### Claim 32 (depends on 31) The display according to claim 31, wherein the metal layer is a multilayer film composed of different materials. ### Claim 33 (depends on 31) The display according to claim 31, wherein the active layer is an amorphous oxide including In, Ga and Zn or an amorphous oxide including Sn, In and Zn. ### Claim 34 (depends on 31) The display according to claim 31, wherein the field-effect transistor is a normally-off type transistor, and the active layer has an electronic carrier concentration of lower than 1018/cm3. ### Claim 35 (depends on 31) The display according to claim 31, wherein the active layer is the amorphous oxide including Sn, In and Zn, and contains 15 at % or more of In as an atomic ratio. ### Claim 36 A display, comprising: a metal layer; an insulating member being in contact with the metal layer, a field-effect transistor, the field-effect transistor comprising an active layer disposed on the insulating member on the opposite side where the metal layer is provided, a gate electrode disposed, via a gate insulating layer, on the active layer on the opposite side where the insulating member is provided, a source electrode and a drain electrode, the source electrode and the drain electrode being disposed on the active layer on the same side as the gate electrode, and being in contact with the active layer; and a light-emitting device comprising a light-emitting layer and a pair of electrodes between which the light-emitting layer is interposed, wherein the active layer includes an amorphous oxide, has a light transmittance of 70% or more in a wavelength range of 400 to 800 nm, and generates photocarriers by irradiation with light having a wavelength range of 500 nm or more, the metal layer shields light in a wavelength range of 400 to 800 nm and configured to suppress a current flowing between the source electrode and the drain electrode, the current being derived from the photocarriers, the gate electrode, the source electrode and the drain electrode include metal material, the metal layer is not electrically connected with the gate electrode, a part of the metal layer and a region of the active layer between the source electrode and the drain electrode overlap each other as viewed from a direction perpendicular to the metal layer, an interlayer-insulating layer is provided between the light-emitting device and the field-effect transistor, the one electrode of the pair of electrodes and the field-effect transistor are connected via a contact hole provided in the interlayer-insulating layer, and the filed-effect transistor functions as a switching element. ### Claim 37 (depends on 36) The display according to claim 36, wherein the metal layer is a multilayer film composed of different materials. ### Claim 38 (depends on 36) The display according to claim 36, wherein the active layer is an amorphous oxide including In, Ga and Zn or an amorphous oxide including Sn, in and Zn. ### Claim 39 (depends on 36) The display according to claim 36, wherein the field-effect transistor is a normally-off type transistor, and the active layer has an electronic carrier concentration of lower than 1018/cm3. ### Claim 40 (depends on 39) The display according to claim 39, wherein the active layer is the amorphous oxide including Sn, In and Zn, and contains 15 at % or more of In as an atomic ratio.