# US 2021/0242341 A1 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242341 A1 - Document ID: US20210242341A1 - Status: Published application - Kind: A1 - Application number: 17/015,406 - Filed: 2020-09-09 - Published: 2021-08-05 - Earliest claimed: 2020-02-05 - Assignees: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation - Applicants: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation - Inventors: Yusuke KOBAYASHI; Hiro GANGI; Tomoaki INOKUCHI; Ryohei GEJO - Web page: https://patentgrep.com/patent/US20210242341A1 ## CPC - H10D 8/422: {PN diodes having the PN junctions in mesas} - H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors} - H10D 30/0295: {using recessing of the source electrodes} - H10D 30/0297: {using recessing of the gate electrodes, e.g. to form trench gate electrodes} - H10D 62/155: {Shapes (cell layout of DMOS H10D62/127)} - H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)} - H10D 64/115: {Resistive field plates, e.g. semi-insulating field plates} - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10D 64/118: {Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges} - H10D 64/2527: {for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies} - H10D 84/141: {VDMOS having built-in components} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract According to one embodiment, a semiconductor device includes first, second, and third electrodes, first, second, and third semiconductor regions, a first member, and a first insulating member. A direction from the first electrode toward the second electrode is along a first direction. The first semiconductor region includes first, second, and third partial regions. A second direction from the second partial region toward the first partial region crosses the first direction. The third partial region is between the second partial region and the second semiconductor region in the first direction. The third semiconductor region is provided between the third partial region and the second semiconductor region. The first insulating member includes a first insulating region and a second insulating region. The first insulating region is between the third partial region and the first member. The second insulating region is between the third semiconductor region and the third electrode. ## Claims ### Claim 1 A semiconductor device, comprising: a first electrode; a second electrode, a direction from the first electrode toward the second electrode being along a first direction; a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, a second direction from the second partial region toward the first partial region crossing the first direction; a second semiconductor region of the first conductivity type, the third partial region being between the second partial region and the second semiconductor region in the first direction, a third semiconductor region provided between the third partial region and the second semiconductor region, the third semiconductor region being of a second conductivity type; a third electrode, a direction from the third semiconductor region toward the third electrode being along the second direction; a first member, a direction from the first partial region toward the first member being along the first direction, a direction from the third partial region toward the first member being along the second direction; and a first insulating member including a first insulating region and a second insulating region, the first insulating region being between the third partial region and the first member in the second direction, the second insulating region being between the third semiconductor region and the third electrode in the second direction, the first member being electrically connected to the first partial region, the first member being electrically connected to the second electrode, or capable of being electrically connected to the second electrode, a resistivity of the first member being greater than a resistivity of the first partial region and less than a resistivity of the first insulating member. ### Claim 2 (depends on 1) The device according to claim 1, wherein the resistivity of the first member is not less than 5×107 Ωcm and not more than 8×1011 Ωcm. ### Claim 3 (depends on 1) The device according to claim 1, further comprising: a first counter member, the third partial region being between the first counter member and the first member in the second direction, the first insulating member further including a first counter insulating region, the first counter insulating region being between the first counter member and the third partial region in the second direction, the first semiconductor region further including a first counter partial region, the second partial region being between the first counter partial region and the first partial region in the second direction, a direction from the first counter partial region toward the first counter member being along the first direction, the first counter member being electrically connected to the first counter partial region, a resistivity of the first counter member being greater than the resistivity of the first partial region and less than the resistivity of the first insulating member. ### Claim 4 A semiconductor device, comprising: a first electrode; a second electrode, a direction from the first electrode toward the second electrode being along a first direction; a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, a second direction from the second partial region toward the first partial region crossing the first direction; a second semiconductor region of the first conductivity type, the third partial region being between the second partial region and the second semiconductor region in the first direction; a third semiconductor region provided between the third partial region and the second semiconductor region, the third semiconductor region being of a second conductivity type; a third electrode, a direction from the third semiconductor region toward the third electrode being along the second direction; a first member, a direction from the first partial region toward the first member being along the first direction, a direction from the third partial region toward the first member being along the second direction; and a first insulating member including a first insulating region and a second insulating region, the first insulating region being between the third partial region and the first member in the second direction, the second insulating region being between the third semiconductor region and the third electrode in the second direction, the first member being electrically connected to the first partial region, the first member being electrically connected to the second electrode, or capable of being electrically connected to the second electrode, the first member including at least one selected from the group consisting of a first material, a second material, a third material, a fourth material, a fifth material, and a sixth material, the first material including Si, N, and O, the second material including a Si—N bond, a N—O bond, and a N—N bond, the third material including a Si—N bond, a N—H bond, and a N—N bond, the fourth material including Si, C, and a first element, the first element including at least one selected from the group consisting of B and N, the fifth material including Si, O, and a second element, the second element including at least one selected from the group consisting of Fe, Au, Ni, Ta, W, and Ti, the sixth material including a third element and a fourth element, the third element including at least one selected from the group consisting of In, Al, and Ga, the fourth element including at least one selected from the group consisting of P, As, B, Fe, Au, Ni, Ti, Ta, W, and Ti. ### Claim 5 (depends on 4) The device according to claim 4, further comprising: a first counter member, the third partial region being between the first counter member and the first member in the second direction, the first insulating member further including a first counter insulating region, the first counter insulating region being between the first counter member and the third partial region in the second direction, the first semiconductor region further including a first counter partial region, the second partial region being between the first counter partial region and the first partial region in the second direction, a direction from the first counter partial region toward the first counter member being along the first direction, the first counter member being electrically connected to the first counter partial region, the first counter member including at least one selected from the group consisting of the first material, the second material, the third material, the fourth material, the fifth material, and the sixth material. ### Claim 6 (depends on 1) The device according to claim 1, wherein a length along the second direction of the first insulating region is not less than 20 nm and not more than 250 nm. ### Claim 7 (depends on 1) The device according to claim 1, further comprising: a first conductive portion electrically connecting the first member and the second electrode. ### Claim 8 (depends on 1) The device according to claim 1, further comprising: a terminal electrically connected to the first member. ### Claim 9 (depends on 1) The device according to claim 1, wherein the first member includes a first end and a second end, the second end is between the first partial region and the first end in the first direction, and a position in the first direction of the first end is between a position in the first direction of the second end and a position in the first direction of a boundary between the third partial region and the third semiconductor region. ### Claim 10 (depends on 1) The device according to claim 1, wherein at least a portion of the first member is between the first partial region and at least a portion of the third electrode in the first direction, the first insulating member includes a third insulating region, and the third insulating region is between the first member and the third electrode. ### Claim 11 (depends on 10) The device according to claim 10, further comprising: a sixth semiconductor region provided between the first partial region and the first member, the sixth semiconductor region being of the first conductivity type, the sixth semiconductor region being electrically connected to the first partial region and the first member, a concentration of an impurity of the first conductivity type in the sixth semiconductor region being greater than a concentration of an impurity of the first conductivity type in the first semiconductor region. ### Claim 12 (depends on 10) The device according to claim 10, wherein a concentration of an impurity of the first conductivity type in the third partial region is less than a concentration of an impurity of the first conductivity type in the first partial region. ### Claim 13 (depends on 10) The device according to claim 10, further comprising: a seventh semiconductor region provided between the third partial region and the third semiconductor region, the seventh semiconductor region being of the first conductivity type, a concentration of an impurity of the first conductivity type in the seventh semiconductor region being less than a concentration of an impurity of the first conductivity type in the third partial region. ### Claim 14 (depends on 1) The device according to claim 1, wherein the first semiconductor region further includes a fourth partial region, the second partial region is between the fourth partial region and the first partial region in the second direction, the third electrode is between the fourth partial region and the second electrode in the first direction, the first insulating member further includes a third insulating region, and the third insulating region is between the fourth partial region and the third electrode in the first direction. ### Claim 15 (depends on 14) The device according to claim 14, further comprising: a second conductive portion electrically connected to the second electrode, the second conductive portion being between the fourth partial region and the third electrode in the first direction, the first insulating member further including a fourth insulating region, the fourth insulating region being between the fourth partial region and the second conductive portion in the first direction, the third insulating region being between the second conductive portion and the third electrode in the first direction. ### Claim 16 (depends on 1) The device according to claim 1, further comprising: a fourth semiconductor region electrically connected to the second electrode, the fourth semiconductor region being of the second conductivity type, a concentration of an impurity of the second conductivity type in the fourth semiconductor region being greater than a concentration of the impurity of the second conductivity type in the third semiconductor region. ### Claim 17 (depends on 1) The device according to claim 1, further comprising: a fifth semiconductor region provided between the first electrode and the first semiconductor region, the fifth semiconductor region being of the first conductivity type, a concentration of an impurity of the first conductivity type in the fifth semiconductor region being greater than a concentration of the impurity of the first conductivity type in the first semiconductor region. ### Claim 18 (depends on 17) The device according to claim 17, wherein a concentration of an impurity of the first conductivity type in the second semiconductor region is greater than the concentration of the impurity of the first conductivity type in the first semiconductor region. ### Claim 19 A semiconductor device, comprising: a first electrode; a second electrode, a direction from the first electrode toward the second electrode being along a first direction; a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, a second direction from the second partial region toward the first partial region crossing the first direction; a second semiconductor region of the second conductivity type, the third partial region being between the second partial region and the second semiconductor region in the first direction; a first member, a direction from the first partial region toward the first member being along the first direction, a direction from the third partial region toward the first member being along the second direction; and a first insulating member including a first insulating region, the first insulating region being between the third partial region and the first member in the second direction, the first member being electrically connected to the first partial region, the first member being electrically connected to the second electrode, or capable of being electrically connected to the second electrode, a resistivity of the first member being greater than a resistivity of the first partial region and less than a resistivity of the first insulating member.