# US 2021/0242253 A1 · Packaging Methods of Semiconductor X-Ray Detectors

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- Number: US 2021/0242253 A1
- Document ID: US20210242253A1
- Status: Published application
- Kind: A1
- Application number: 17/239,096
- Filed: 2021-04-23
- Published: 2021-08-05
- Earliest claimed: 2017-12-19
- Assignees: Shenzhen Xpectvision Technology Co., Ltd.
- Applicants: Shenzhen Xpectvision Technology Co., Ltd.
- Inventors: Peiyan CAO; Yurun LIU
- Web page: https://patentgrep.com/patent/US20210242253A1

## CPC

- H10F 39/018: {of hybrid image sensors}
- G01T 1/247: {Detector read-out circuitry (for processing gain or off-set correction H04N)}
- G01T 1/2985: {In depth localisation, e.g. using positron emitters; Tomographic imaging (longitudinal and transverse section imaging; apparatus for radiation diagnosis sequentially in different planes, steroscopic radiation diagnosis); (using external radiation sources A61B6/02)}
- H02S 50/00: Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H10F 30/29: the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F 39/189: {X-ray, gamma-ray or corpuscular radiation imagers}
- H10F 39/1892: {Direct radiation image sensors}
- H10F 39/1895: {of the hybrid type}
- H10F 39/804: {Containers or encapsulations}
- H10F 39/809: {of hybrid image sensors}
- H10F 39/1898: {Indirect radiation image sensors, e.g. using luminescent members}
- H10F 39/811: {Interconnections}
- Y02E 10/50: Photovoltaic [PV] energy
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)
- H02S: GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES (obtaining electrical energy from radioactive sources G21H1/12; light sensitive inorganic semiconductor devices H10F; light sensitive organic semiconductor devices H10K30/00; thermoelectric devices H10N10/00; pyroelectric devices H10N15/00)
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

Disclosed herein are various methods of packaging a semiconductor X-ray detector. The methods may include bonding chips including an X-ray absorption layer or including both an X-ray absorption layer and an electronic layer onto another support such as an interposer substrate or a printed circuit board.

## Claims

### Claim 1

A method for making an apparatus suitable for detecting X-ray, the method comprising:
bonding a plurality of chips to a first substrate, wherein the first substrate comprises a plurality of electric contacts and a plurality of vias connecting the electric contacts to a surface of the first substrate, wherein each of the chips comprises an X-ray absorption layer comprising a first electrode and a second electrode, and wherein the plurality of chips are bonded to the first substrate such that the second electrode of each of the chips is electrically connected to at least one of the electrical contacts;
filling gaps between the chips with an electrically insulating material, wherein the first electrode of each of the chips remains exposed;
electrically connecting the first electrodes of each of the chips with an electrically conductive layer;
bonding the first substrate to an interposer substrate such that the vias are electrically connected to contacts pads of the interposer substrate;
attaching the interposer substrate to a printed circuit board.

### Claim 2 (depends on 1)

The method of claim 1, wherein the interposer substrate comprises transmission lines buried therein or on a surface thereof, wherein the transmission lines electrically are connected to the contact pads and are configured to route signal on the contact pads.

### Claim 3 (depends on 1)

The method of claim 1, further comprising thinning the first substrate.

### Claim 4 (depends on 1)

The method of claim 1, wherein the electrically conductive layer is a layer of metal deposited over the chips.

### Claim 5 (depends on 1)

The method of claim 1, wherein the electronically insulation material comprises oxide, nitride, glass, polymer, epoxy or a combination thereof.

### Claim 6 (depends on 1)

The method of claim 1, wherein the first substrate comprises an electronic system configured to process or interpret signals generated by X-ray photons incident on the X-ray absorption layer.

### Claim 7

A method for making an apparatus suitable for detecting X-ray, the method comprising:
bonding a plurality of chips to a support wafer, wherein each of the chips comprises an X-ray absorption layer comprising a first electrode and a second electrode, and wherein the plurality of chips are bonded to the support wafer such that the first electrode of each of the chips is directly attached to the support wafer;
bonding the plurality of chips to a first substrate, wherein the first substrate comprises a plurality of electric contacts and a plurality of vias connecting the electric contacts to a surface of the first substrate, and wherein the plurality of chips are bonded to the first substrate such that the second electrode of each of the chips is electrically connected to at least one of the electrical contacts;
removing the support wafer and exposing the first electrode of each of the chips.

### Claim 8 (depends on 7)

The method of claim 7, further comprising thinning the first substrate.

### Claim 9 (depends on 7)

The method of claim 7, wherein the chips are attached to the support wafer by an adhesive.

### Claim 10 (depends on 7)

The method of claim 7, wherein the support wafer is removed by etching or grinding.

### Claim 11

A method for making an apparatus suitable for detecting X-ray, the method comprising:
bonding a plurality of chips to a support wafer, wherein each of the chips comprises an X-ray absorption layer comprising a first electrode and a second electrode, and wherein the plurality of chips are bonded to the support wafer such that the second electrode of each of the chips is directly attached to the support wafer;
encapsulating the chips in a matrix, the matrix being supported on the support wafer;
removing the support wafer and exposing the second electrode of each of the chips;
bonding the plurality of chips to a first substrate, wherein the first substrate comprises a plurality of electric contacts and a plurality of vias connecting the electric contacts to a surface of the first substrate, and wherein the plurality of chips are bonded to the first substrate such that the second electrode of each of the chips is electrically connected to at least one of the electrical contacts;
removing at least partially of the matrix and exposing the first electrode of each of the chips.

### Claim 12 (depends on 11)

The method of claim 11, wherein the matrix is a polymer or a glass.

### Claim 13 (depends on 11)

The method of claim 11, wherein the matrix fills gaps between the chips.

### Claim 14 (depends on 11)

The method of claim 11, wherein the matrix is at least partially removed by etching or grinding.
