# US 2021/0242250 A1 · Solid-state imaging device and electronic apparatus

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- Number: US 2021/0242250 A1
- Document ID: US20210242250A1
- Status: Published application
- Kind: A1
- Application number: 17/236,210
- Filed: 2021-04-21
- Published: 2021-08-05
- Earliest claimed: 2014-08-29
- Assignees: Sony Group Corporation
- Applicants: Sony Group Corporation
- Inventors: YOSHIAKI MASUDA; NAOYUKI SATO
- Web page: https://patentgrep.com/patent/US20210242250A1

## CPC

- G02B 1/113: using inorganic layer materials only
- G02B 7/365: {by analysis of the spatial frequency components of the image}
- H04N 25/702: SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
- H04N 25/704: Pixels specially adapted for focusing, e.g. phase difference pixel sets
- H10F 39/182: {Colour image sensors}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery}
- H10F 39/805: {Coatings}
- H10F 39/8053: {Colour filters}
- H10F 39/8057: {Optical shielding}
- H10F 39/8063: {Microlenses}
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 99/00: Subject matter not provided for in other groups of this subclass
- H10F 77/331: {for filtering or shielding light, e.g. multicolour filters for photodetectors}
- H10F 77/334: {for shielding light, e.g. light blocking layers or cold shields for infrared detectors}
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Provided is a solid-state imaging device that includes a normal pixel for generating a pixel signal and a phase difference detection pixel for generating a phase difference signal for image plane phase difference AF. In this solid-state imaging device, the normal pixel and the phase difference detection pixel each include a photoelectric conversion layer and a lens for gathering incident light onto the photoelectric conversion layer, the phase difference detection pixel includes a light blocking layer having an apertural portion with an aperture deviating from the optical axis of the lens, and an antireflection portion that prevents reflection of the incident light gathered by the lens unit is formed on the light blocking layer.

## Claims

### Claim 1

A solid-state imaging device, comprising:
a normal pixel for generating a pixel signal; and
a phase difference detection pixel for generating a phase difference signal for image plane phase difference AF, wherein
the normal pixel and the phase difference detection pixel each include a photoelectric conversion layer and a lens for gathering incident light onto the photoelectric conversion layer,
the phase difference detection pixel includes a light blocking layer having an apertural portion with an aperture deviating from an optical axis of the lens,
the normal pixel includes a color filter between the lens and the photoelectric conversion layer,
the color filter is in direct contact with the light blocking layer, and
an antireflection portion configured to prevent reflection of the incident light gathered by the lens is formed on the light blocking layer.

### Claim 2 (depends on 1)

The solid-state imaging device according to claim 1, wherein the antireflection portion is an antireflection film formed on a sidewall surface of the light blocking layer facing the apertural portion.

### Claim 3 (depends on 2)

The solid-state imaging device according to claim 2, wherein the antireflection portion is the antireflection film further formed on an upper surface of the light blocking layer on a side of the lens.

### Claim 4 (depends on 2)

The solid-state imaging device according to claim 2, wherein
the light blocking layer is made of a metal, and
the antireflection film is made of a metal oxide formed by subjecting the metal to an oxidation treatment.

### Claim 5 (depends on 2)

The solid-state imaging device according to claim 2, wherein
the light blocking layer is made of W, and
the antireflection film is made of WOx formed by subjecting the W to an oxidation treatment.

### Claim 6 (depends on 1)

The solid-state imaging device according to claim 1, wherein the antireflection portion is a tapered portion in which the light blocking layer becomes thinner in a direction toward the apertural portion.

### Claim 7 (depends on 2)

The solid-state imaging device according to claim 2, wherein
the normal pixel and the phase difference detection pixel each further include an antireflection layer on an upper surface of the photoelectric conversion layer on a side of the lens, and
the antireflection layer of the phase difference detection pixel has a removed portion that is a portion selectively removed.

### Claim 8 (depends on 2)

The solid-state imaging device according to claim 2, wherein the light blocking layer is thinner than a light blocking film formed in an OPB region.

### Claim 9 (depends on 2)

The solid-state imaging device according to claim 2, wherein the solid-state imaging device is of a back-illuminated type.

### Claim 10

An electronic apparatus equipped with a solid-state imaging device,
the solid-state imaging device including:
a normal pixel for generating a pixel signal; and
a phase difference detection pixel for generating a phase difference signal for image plane phase difference AF, wherein
the normal pixel and the phase difference detection pixel each include a photoelectric conversion layer and a lens for gathering incident light onto the photoelectric conversion layer,
the phase difference detection pixel includes a light blocking layer having an apertural portion with an aperture deviating from an optical axis of the lens,
the normal pixel includes a color filter between the lens and the photoelectric conversion layer,
the color filter is in direct contact with the light blocking layer, and
an antireflection portion configured to prevent reflection of the incident light gathered by the lens is formed on the light blocking layer.