# US 2021/0242238 A1 · Three-dimensional memory device and manufacturing method thereof

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- Number: US 2021/0242238 A1
- Document ID: US20210242238A1
- Status: Published application
- Kind: A1
- Application number: 17/238,091
- Filed: 2021-04-22
- Published: 2021-08-05
- Earliest claimed: 2019-01-08
- Assignees: Yangtze Memory Technologies Co., Ltd.
- Applicants: Yangtze Memory Technologies Co., Ltd.
- Inventors: Lan Yao; Lei Xue
- Web page: https://patentgrep.com/patent/US20210242238A1

## CPC

- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/35: with cell select transistors, e.g. NAND
- H10D 64/035: {comprising conductor-insulator-conductor-insulator-semiconductor structures}
- H10D 64/037: {comprising charge-trapping insulators}
- H10P 14/6304: {Formation by oxidation, e.g. oxidation of the substrate}
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A three-dimensional (3D) memory device and a manufacturing method thereof are provided. The method includes the following steps. An alternating dielectric stack is formed on a substrate. A vertical structure is formed penetrating the alternating dielectric stack in a vertical direction. A bottom dielectric layer of the alternating dielectric stack is removed. An epitaxial layer is formed between the substrate and the alternating dielectric stack after removing the bottom dielectric layer. An insulating layer is formed on the epitaxial layer. The insulating layer is located between the epitaxial layer and the alternating dielectric stack. The influence of the step of forming the vertical structure on the epitaxial layer may be avoided, and defects at the interface between the epitaxial layer and the bottom dielectric layer may be avoided accordingly.

## Claims

### Claim 1

A manufacturing method of a three-dimensional (3D) memory device, comprising:
forming an alternating dielectric stack on a substrate;
forming a vertical structure penetrating the alternating dielectric stack in a vertical direction perpendicular to a surface of the substrate;
removing a bottom dielectric layer of the alternating dielectric stack;
forming an epitaxial layer between the substrate and the alternating dielectric stack after removing the bottom dielectric layer; and
forming an insulating layer on the epitaxial layer, wherein the insulating layer is located between the epitaxial layer and the alternating dielectric stack.