# US 2021/0242214 A1 · Contacts and method of manufacturing the same

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- Number: US 2021/0242214 A1
- Document ID: US20210242214A1
- Status: Published application
- Kind: A1
- Application number: 17/235,950
- Filed: 2021-04-21
- Published: 2021-08-05
- Earliest claimed: 2017-08-08
- Assignees: United Microelectronics Corp.; Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicants: United Microelectronics Corp.; Fujian Jinhua Integrated Circuit Co., Ltd.
- Inventors: Feng-Yi Chang; Fu-Che Lee
- Web page: https://patentgrep.com/patent/US20210242214A1

## CPC

- H10B 12/485: {Bit line contacts}
- H10B 12/0335: {Making a connection between the transistor and the capacitor, e.g. plug}
- H10B 12/482: {Bit lines}
- H10B 12/488: {Word lines}
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A method of manufacturing contacts is provided in the present invention, which include the steps of forming a plurality of mask bars on a substrate, forming a circular mask surrounding each mask bar, wherein the circular masks connect each other and define a plurality of opening patterns collectively with the mask bars, using the mask bars and the circular masks as etch masks to perform an etch process and to transfer the opening patterns and form a plurality recesses in the substrate, and filling up the recesses with metal to form contacts.

## Claims

### Claim 1

A method of manufacturing contacts, comprising:
providing a substrate, wherein said substrate has a plurality of active areas;
forming a plurality of mask bars on said substrate;
forming a spacer around each said mask bar, wherein said plurality of spacers connect with each other and define a plurality of opening patterns collectively with said plurality of mask bars;
performing an etch process using said plurality of mask bars and said plurality of spacers as etch masks to transfer said plurality of opening patterns to said substrate and to form a plurality of recesses in said substrate; and
filling each said recess with conductive material to form contacts, wherein said contacts connect with said plurality of active areas.

### Claim 2 (depends on 1)

The method of manufacturing contacts of claim 1, wherein the steps of forming said spacer around each said mask bar comprises:
forming a mask block on each said mask bar, wherein said mask bar is in the midline of said mask block;
forming a conformal spacer layer on said substrate and said plurality of mask blocks, wherein said spacer layer on said plurality of mask blocks connects with each other to define a plurality of first opening patterns; and
performing a first etch process to etch said spacer layer and said mask blocks so that said spacer layer on said plurality of mask blocks is removed and said spacer layer on sidewalls of said plurality of mask blocks remains to form said plurality of spacers, wherein said plurality of mask blocks are completely removed and each said mask block and each said mask bar define two second opening patterns.

### Claim 3 (depends on 2)

The method of manufacturing contacts of claim 2, wherein said first opening patterns define bit line contact patterns, and said second opening patterns define storage node contact patterns.

### Claim 4 (depends on 2)

The method of manufacturing contacts of claim 2, wherein each said first opening patterns is on the center of one said active area, and every two said second opening patterns are on two opposite ends of one said active area.

### Claim 5 (depends on 2)

The method of manufacturing contacts of claim 2, wherein said etch process transfers said first opening patterns and said second opening patterns to said substrate to form a plurality of first recesses and a plurality of second recesses respectively in said substrate.

### Claim 6 (depends on 5)

The method of manufacturing contacts of claim 5, wherein said contact in said first recess is bit line contact, said contact in said second recess is storage node contact.

### Claim 7 (depends on 6)

The method of manufacturing contacts of claim 6, further comprising forming bit lines on said bit line contacts to connect with said bit lines, wherein said bit line and said plurality of mask bars overlap.

### Claim 8 (depends on 6)

The method of manufacturing contacts of claim 6, further comprising forming contact plug on every said storage node contacts.

### Claim 9 (depends on 1)

The method of manufacturing contacts of claim 1, wherein said plurality of mask bars form in staggered arrangement between word lines and between two adjacent ends of said active areas.