# US 2021/0242027 A1 · Substrate processing method, modification device and substrate processing system

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- Number: US 2021/0242027 A1
- Document ID: US20210242027A1
- Status: Published application
- Kind: A1
- Application number: 16/973,515
- Filed: 2019-05-29
- Published: 2021-08-05
- Earliest claimed: 2018-06-12
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Norifumi Kohama; Takayuki Ishii
- Web page: https://patentgrep.com/patent/US20210242027A1

## CPC

- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- B23K 26/0006: {taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence)}
- B23K 26/032: {using optical means}
- B23K 26/0823: {Devices involving rotation of the workpiece}
- B23K 26/0853: {Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane}
- B23K 26/0884: {in at least three axial directions, e.g. manipulators, robots}
- B23K 26/324: involving non-metallic parts
- B23K 26/53: for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
- B23K 26/57: the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
- H10P 10/128: {by direct semiconductor to semiconductor bonding}
- H10P 34/40: with high-energy radiation
- H10P 72/0428: {Apparatus for mechanical treatment or grinding or cutting}
- H10P 72/0436: {mainly by radiation}
- H10P 72/0458: {vertical arrangement}
- H10P 72/7618: {characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel}
- H10P 72/78: using vacuum or suction, e.g. Bernoulli chucks
- H10P 76/2041: {Photolithographic processes}
- B23K 2101/40: Semiconductor devices
- B23K 2103/56: {being semiconducting}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM

## Abstract

A substrate processing method of processing a substrate includes: forming a modification layer at least on a surface layer of a rear surface of the substrate or within the substrate by radiating a laser beam; and processing a front surface of the substrate in a state that the rear surface of the substrate is held. A modification device includes a laser irradiation unit configured to form a modification layer at least on a surface layer of the rear surface of the substrate or within the substrate by radiating a laser beam.

## Claims

### Claim 1

A substrate processing method of processing a substrate, comprising:
forming a modification layer at least on a surface layer of a rear surface of the substrate or within the substrate by radiating a laser beam; and
processing a front surface of the substrate in a state that the rear surface of the substrate is held.

### Claim 2 (depends on 1)

The substrate processing method of claim 1,
wherein in the forming of the modification layer, the modification layer is formed at least on a surface layer of a rear surface of a first substrate or within the first substrate, and
in the processing of the front surface, a front surface of the first substrate and a front surface of a second substrate are bonded to each other.

### Claim 3 (depends on 2)

The substrate processing method of claim 2,
wherein in the forming of the modification layer, the modification layer is formed on a surface layer of a rear surface of the second substrate.

### Claim 4 (depends on 2)

The substrate processing method of claim 2,
wherein the processing of the front surface includes:
placing the first substrate and the second substrate to face each other after the rear surface of the first substrate is vacuum-exhausted to be held by a first holder and a rear surface of the second substrate is vacuum-exhausted to be held by a second holder;
pressing, by lowering a push member provided in the first holder and configured to press a central portion of the first substrate, the central portion of the first substrate and a central portion of the second substrate into contact with each other by the push member; and
bonding the first substrate and the second substrate to each other sequentially from the central portion toward an outer peripheral portion of the first substrate in a state that the central portion of the first substrate and the central portion of the second substrate are pressed.

### Claim 5 (depends on 2)

The substrate processing method of claim 2, further comprising:
grinding the rear surface of the first substrate after the forming of the modification layer,
wherein in the forming of the modification layer, the modification layer is formed at a position where a portion of the first substrate including the modification layer is ground in the grinding of the rear surface.

### Claim 6 (depends on 1)

The substrate processing method of claim 1,
wherein in the forming of the modification layer, the modification layer is formed on the surface layer of the rear surface of the substrate, and
in the processing of the front surface, an exposure processing in a photolithography processing is performed on the front surface of the substrate.

### Claim 7

(canceled)

### Claim 8

A substrate processing system configured to process a substrate, comprising:
a modification device equipped with a laser irradiation unit configured to form a modification layer at least on a surface layer of a rear surface of a first substrate or within the first substrate by radiating a laser beam;
a bonding device configured to bond a front surface of the first substrate in which the modification layer is formed and a front surface of a second substrate to each other; and
a transfer device configured to transfer the first substrate and the second substrate to the modification device and the bonding device.

### Claim 9 (depends on 8)

The substrate processing system of claim 8,
wherein the modification device forms the modification layer on a surface layer of a rear surface of the second substrate.

### Claim 10 (depends on 8)

The substrate processing system of claim 8,
wherein the bonding device includes:
a first holder configured to attract and hold the rear surface of the first substrate;
a second holder configured to attract and hold a rear surface of the second substrate; and
a push member provided in the first holder and configured to press a central portion of the first substrate.

### Claim 11 (depends on 8)

The substrate processing system of claim 8, further comprising:
a processing device configured to grind the rear surface of the first substrate in which the modification layer is formed,
wherein the modification device forms the modification layer at a position where a portion of the first substrate including the modification layer is ground by the processing device.

### Claim 12

(canceled)