# US 2021/0242014 A1 · Water soluble organic-inorganic hybrid mask formulations and their applications

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- Number: US 2021/0242014 A1
- Document ID: US20210242014A1
- Status: Published application
- Kind: A1
- Application number: 16/777,610
- Filed: 2020-01-30
- Published: 2021-08-05
- Earliest claimed: 2020-01-30
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Wenguang Li; James S. Papanu
- Web page: https://patentgrep.com/patent/US20210242014A1

## CPC

- H10P 76/2042: {using lasers}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10P 50/242: {of Group IV materials}
- H10P 50/244: {comprising alternated and repeated etching and passivation steps}
- H10P 50/692: {characterised by their composition, e.g. multilayer masks or materials}
- H10P 50/695: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask}
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P 70/20: {Cleaning during device manufacture}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Water soluble organic-inorganic hybrid masks and mask formulations, and methods of dicing semiconductor wafers are described. In an example, a mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. A p-block metal compound, an s-block metal compound, or a transition metal compound is dissolved throughout the water-soluble matrix.

## Claims

### Claim 1

A mask for a wafer singulation process, the mask comprising:
a water-soluble matrix based on a solid component and water; and
a p-block metal compound, an s-block metal compound, or a transition metal compound dissolved throughout the water-soluble matrix.

### Claim 2 (depends on 1)

The mask of claim 1, wherein the p-block metal compound comprises an aluminum cation or a tin cation, or wherein the s-block metal compound comprises a potassium cation or a calcium cation.

### Claim 3 (depends on 1)

The mask of claim 1, wherein the transition metal compound comprises a copper cation, a nickel cation, a silver cation, or a chromium cation.

### Claim 4 (depends on 1)

The mask of claim 1, wherein the p-block metal compound, the s-block metal compound, or the transition metal compound comprises an acetate anion.

### Claim 5 (depends on 1)

The mask of claim 1, wherein the solid component of the water-soluble matrix is poly(vinyl alcohol) (PVA).

### Claim 6 (depends on 5)

The mask of claim 5, wherein the water-soluble matrix further comprises poly(vinyl pyrrolidone), a dye, a corrosion inhibitor, or a pH adjuster.

### Claim 7

A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
forming a mask above the semiconductor wafer, the mask comprising a water-soluble matrix based on a solid component and water, and the mask comprising a p-block metal compound, an s-block metal compound, or a transition metal compound dissolved throughout the water-soluble matrix;
patterning the mask and a portion of the semiconductor wafer with a laser scribing process to provide a patterned mask with gaps and corresponding trenches in the semiconductor wafer in regions between the integrated circuits; and
plasma etching the semiconductor wafer through the gaps in the patterned mask to extend the trenches and to singulate the integrated circuits, wherein the patterned mask protects the integrated circuits during the plasma etching.

### Claim 8 (depends on 7)

The method of claim 7, wherein plasma etching the semiconductor wafer comprises using a fluorine-based etch chemistry, and the p-block metal compound, the s-block metal compound, or the transition metal compound is resistant to the fluorine-based etch chemistry.

### Claim 9 (depends on 7)

The method of claim 7, wherein the p-block metal compound comprises an aluminum cation or a tin cation, or wherein the s-block metal compound comprises a potassium cation or a calcium cation, or wherein the transition metal compound comprises a copper cation, a nickel cation, a silver cation, or a chromium cation.

### Claim 10 (depends on 7)

The method of claim 7, wherein the p-block metal compound, the s-block metal compound, or the transition metal compound comprises an acetate anion.

### Claim 11 (depends on 7)

The method of claim 7, wherein the solid component of the water-soluble matrix is poly(vinyl alcohol) (PVA), and wherein the water-soluble matrix further comprises poly(vinyl pyrrolidone).

### Claim 12 (depends on 7)

The method of claim 7, wherein plasma etching the semiconductor wafer comprises plasma etching a single crystalline silicon wafer, and wherein a ratio of an etch rate of the single crystalline silicon wafer to an etch rate of the mask is approximately in the range of 36:1-140:1 during the plasma etching.

### Claim 13 (depends on 7)

The method of claim 7, further comprising:
prior to forming the mask above the semiconductor wafer, performing a plasma or chemical pre-treatment on the semiconductor wafer to increase wettability and coating of the mask on the semiconductor wafer.

### Claim 14 (depends on 7)

The method of claim 7, further comprising:
subsequent to plasma etching the semiconductor wafer, removing the patterned mask using an aqueous solution.

### Claim 15 (depends on 7)

The method of claim 7, further comprising:
subsequent to patterning the mask and prior to plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits, cleaning the trenches in the semiconductor wafer with a plasma cleaning process.

### Claim 16

A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
forming a mask above the semiconductor wafer, the mask comprising a water-soluble matrix based on a solid component and water, and the mask comprising a p-block metal compound, an s-block metal compound, or a transition metal compound dissolved throughout the water-soluble matrix; and
patterning the mask and singulating the integrated circuits of the semiconductor wafer with a plasma etching process, wherein the patterned mask protects the integrated circuits during the plasma etching.

### Claim 17 (depends on 16)

The method of claim 16, wherein the p-block metal compound comprises an aluminum cation or a tin cation, or wherein the s-block metal compound comprises a potassium cation or a calcium cation, or wherein the transition metal compound comprises a copper cation, a nickel cation, a silver cation, or a chromium cation, and wherein the p-block metal compound, the s-block metal compound, or the transition metal compound comprises an acetate anion.

### Claim 18 (depends on 16)

The method of claim 16, wherein the solid component of the water-soluble matrix is poly(vinyl alcohol) (PVA), and wherein the water-soluble matrix further comprises poly(vinyl pyrrolidone).

### Claim 19 (depends on 16)

The method of claim 16, wherein forming the mask above the semiconductor wafer comprises spin-coating the mask on the semiconductor wafer.

### Claim 20 (depends on 16)

The method of claim 16, further comprising:
subsequent to patterning the mask and singulating the integrated circuits of the semiconductor wafer with the laser scribing process, removing the patterned mask using an aqueous solution.