# US 2021/0242010 A1 · Substrate processing system and substrate processing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242010 A1 - Document ID: US20210242010A1 - Status: Published application - Kind: A1 - Application number: 17/049,076 - Filed: 2019-04-17 - Published: 2021-08-05 - Earliest claimed: 2018-04-27 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Hayato TANOUE - Web page: https://patentgrep.com/patent/US20210242010A1 ## CPC - H10P 72/0606: {Position monitoring, e.g. misposition detection or presence detection} - H10P 90/128: {by edge treatment, e.g. chamfering} - B23K 26/0006: {taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence)} - B23K 26/032: {using optical means} - B23K 26/0604: {by a combination of beams} - B23K 26/0622: by shaping pulses - B23K 26/0823: {Devices involving rotation of the workpiece} - B23K 26/0853: {Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane} - B23K 26/0884: {in at least three axial directions, e.g. manipulators, robots} - B23K 26/53: for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks - B23K 26/57: the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices - H10P 72/0428: {Apparatus for mechanical treatment or grinding or cutting} - H10P 72/0436: {mainly by radiation} - H10P 72/0616: {Monitoring of warpages, curvatures, damages, defects or the like} - H10P 72/7618: {characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel} - H10P 90/00: Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM ## Abstract A substrate processing system configured to process a substrate includes an eccentricity detection device configured to detect, in a combined substrate in which a first substrate and a second substrate are bonded to each other, an eccentricity of the first substrate; a modification layer forming device configured to form a modification layer within the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; and a periphery removing device configured to remove the peripheral portion starting from the modification layer. ## Claims ### Claim 1 A substrate processing system configured to process a substrate, comprising: an eccentricity detection device configured to detect, in a combined substrate in which a first substrate and a second substrate are bonded to each other, an eccentricity of the first substrate; a modification layer forming device configured to form a modification layer within the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; and a periphery removing device configured to remove the peripheral portion starting from the modification layer. ### Claim 2 (depends on 1) The substrate processing system of claim 1, further comprising: a control device configured to control the eccentricity detection device, the modification layer forming device and the periphery removing device, wherein the modification layer forming device includes a holder configured to hold the combined substrate and a modifying unit configured to form the modification layer within the first substrate in the combined substrate held on the holder, and the control device adjusts a center of the first substrate in the combined substrate held on the holder based on a detection result by the eccentricity detection device in a processing performed by the modifying unit. ### Claim 3 (depends on 2) The substrate processing system of claim 2, wherein the modifying unit radiates a laser beam into the first substrate to form the modification layer, and the control device adjusts a central axis of the holder or an irradiation axis of the laser beam radiated from the modifying unit based on the detection result by the eccentricity detection device. ### Claim 4 (depends on 2) The substrate processing system of claim 2, further comprising: a transfer device configured to transfer the combined substrate with respect to the eccentricity detection device, the modification layer forming device and the periphery removing device, wherein the control device controls the transfer device to transfer the combined substrate onto the holder to match the center of the first substrate with a center of the holder based on the detection result by the eccentricity detection device. ### Claim 5 (depends on 2) The substrate processing system of claim 2, wherein the periphery removing device includes a grinding unit configured to grind a non-bonding surface of the first substrate and a processing unit configured to perform position adjustment of the combined substrate, the holder and the modifying unit of the modification layer forming device are provided in the processing unit, and the control device controls the processing unit based on the detection result by the eccentricity detection device. ### Claim 6 (depends on 1) The substrate processing system of claim 1, further comprising: an interface processing device including an additional holder configured to hold the combined substrate and an interface processing unit configured to modify an interface between the peripheral portion of the first substrate and the second substrate in the combined substrate held on the additional holder; and a control device configured to control the eccentricity detection device, the modification layer forming device, the periphery removing device and the interface processing device, wherein the control device adjusts a center of the first substrate in the combined substrate held on the additional holder based on a detection result by the eccentricity detection device in a processing performed by the interface processing unit. ### Claim 7 (depends on 6) The substrate processing system of claim 6, wherein the interface processing unit radiates a laser beam to the interface to modify the interface, and the control device adjusts a central axis of the additional holder or an irradiation axis of the laser beam radiated from the interface processing unit based on the detection result by the eccentricity detection device. ### Claim 8 (depends on 6) The substrate processing system of claim 6, further comprising: a transfer device configured to transfer the combined substrate with respect to the eccentricity detection device, the modification layer forming device, the periphery removing device and the interface processing device, wherein the control device controls the transfer device to transfer the combined substrate to the additional holder to match the center of the first substrate with a center of the additional holder based on the detection result by the eccentricity detection device. ### Claim 9 (depends on 6) The substrate processing system of claim 6, wherein the periphery removing device includes a grinding unit configured to grind a non-bonding surface of the first substrate and a processing unit configured to perform position adjustment of the combined substrate, the additional holder and the interface processing unit of the interface processing device are provided in the processing unit, and the control device controls the processing unit based on the detection result by the eccentricity detection device. ### Claim 10 (depends on 1) The substrate processing system of claim 1, further comprising: a bonding device configured to bond the first substrate and the second substrate to each other. ### Claim 11 (depends on 1) The substrate processing system of claim 1, wherein the eccentricity detection device detects an eccentricity of a third substrate stacked on the first substrate in the combined substrate, the modification layer forming device forms a modification layer within the third substrate along a boundary between a peripheral portion to be removed and a central portion of the third substrate, and the periphery removing device removes the peripheral portion of the third substrate starting from the modification layer in the third substrate. ### Claim 12 A substrate processing method of processing a substrate, comprising: detecting, in a combined substrate in which a first substrate and a second substrate are bonded to each other, an eccentricity of the first substrate; forming a modification layer within the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; and removing the peripheral portion starting from the modification layer. ### Claim 13 (depends on 12) The substrate processing method of claim 12, wherein in the forming of the modification layer within the first substrate, the modification layer is formed within the first substrate in the combined substrate held on a holder by a modifying unit, and before the forming of the modification layer within the first substrate is performed, a center of the first substrate in the combined substrate held on the holder is adjusted based on a detection result of the detecting of the eccentricity of the first substrate in a processing performed by the modifying unit. ### Claim 14 (depends on 13) The substrate processing method of claim 13, wherein in the forming of the modification layer within the first substrate, the modifying unit radiates a laser beam into the first substrate to form the modification layer, and before the forming of the modification layer within the first substrate is performed, a central axis of the holder or an irradiation axis of the laser beam radiated from the modifying unit is adjusted based on the detection result of the detecting of the eccentricity of the first substrate. ### Claim 15 (depends on 13) The substrate processing method of claim 13, wherein before the forming of the modification layer within the first substrate is performed, the combined substrate is transferred onto the holder to match the center of the first substrate with a center of the holder based on the detection result of the detecting of the eccentricity of the first substrate. ### Claim 16 (depends on 13) The substrate processing method of claim 13, wherein in the removing of the peripheral portion, by allowing a processing unit to perform position adjustment of the combined substrate and then allowing a grinding unit to grind a non-bonding surface of the first substrate, the peripheral portion is removed, the holder and the modifying unit are provided in the processing unit, and the center of the first substrate in the combined substrate held on the holder is adjusted based on the detection result of the detecting of the eccentricity of the first substrate by the processing unit in a processing performed by the modifying unit. ### Claim 17 (depends on 12) The substrate processing method of claim 12, further comprising: modifying an interface between the peripheral portion of the first substrate and the second substrate in the combined substrate held on an additional holder by an interface processing unit, wherein before the modifying of the interface is performed, a center of the first substrate in the combined substrate held on the additional holder is adjusted based on a detection result of the detecting of the eccentricity of the first substrate in a processing performed by the interface processing unit. ### Claim 18 (depends on 17) The substrate processing method of claim 17, wherein in the modifying of the interface, the interface processing unit radiates a laser beam to the interface to modify the interface, and before the modifying of the interface is performed, a central axis of the additional holder or an irradiation axis of the laser beam radiated from the interface processing unit is adjusted based on the detection result of the detecting of the eccentricity of the first substrate. ### Claim 19 (depends on 17) The substrate processing method of claim 17, wherein before the modifying of the interface is performed, the combined substrate is transferred to the additional holder to match the center of the first substrate with a center of the additional holder based on the detection result of the detecting of the eccentricity of the first substrate. ### Claim 20 (depends on 17) The substrate processing method of claim 17, wherein in the removing of the peripheral portion, by allowing a processing unit to perform position adjustment of the combined substrate and then allowing a grinding unit to grind a non-bonding surface of the first substrate, the peripheral portion is removed, the additional holder and the interface processing unit are provided in the processing unit, and the center of the first substrate in the combined substrate held on the additional holder is adjusted based on the detection result of the detecting of the eccentricity of the first substrate by the processing unit in a processing performed by the interface processing unit. ### Claim 21 (depends on 12) The substrate processing method of claim 12, further comprising: stacking and bonding a third substrate onto the first substrate after the removing of the peripheral portion; detecting an eccentricity of the third substrate stacked on the first substrate in the combined substrate; forming a modification layer within the third substrate along a boundary between a peripheral portion to be removed and a central portion of the third substrate; and removing the peripheral portion of the third substrate starting from the modification layer in the third substrate.