# US 2021/0242000 A1 · Sputtering target for magnetic recording medium > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0242000 A1 - Document ID: US20210242000A1 - Status: Published application - Kind: A1 - Application number: 17/050,718 - Filed: 2019-07-25 - Published: 2021-08-05 - Earliest claimed: 2018-07-31 - Assignees: Tanaka Kikinzoku Kogyo K.K.; Tohoku University - Applicants: Tanaka Kikinzoku Kogyo K.K.; Tohoku University - Inventors: Tomonari Kamada; Ryousuke Kushibiki; Kim Kong Tham; Shin Saito - Web page: https://patentgrep.com/patent/US20210242000A1 ## CPC - H01J 37/3426: {Material} - C23C 14/08: Oxides (C23C14/10 takes precedence) - C23C 14/185: {by cathodic sputtering} - C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy} - G11B 5/656: {containing Co (containing inorganic, non-oxide compounds of Si, N, P, B, H or C G11B5/657; containing oxygen G11B5/658)} - G11B 5/658: {containing oxygen, e.g. molecular oxygen or magnetic oxide} - H01F 1/047: Alloys characterised by their composition - H01F 41/18: by cathode sputtering - H01J 37/3429: {Plural materials} - B22F 2998/10: Processes characterised by the sequence of their steps - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R) - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER ## Abstract For a further high capacity, provided is a sputtering target for a magnetic recording medium that can form a magnetic thin film having enhanced uniaxial magnetic anisotropy, reduced intergranular exchange coupling, and improved thermal stability and SNR (signal-to-noise ratio). The sputtering target for a magnetic recording medium, comprises: a metal phase containing Pt and at least one or more selected from Cu and Ni, with the balance being Co and incidental impurities; and an oxide phase containing at least B2O3. ## Claims ### Claim 1 A sputtering target for a magnetic recording medium, comprising: a metal phase containing Pt and at least one or more selected from Cu and Ni, with the balance being Co and incidental impurities; and an oxide phase containing at least B2O3. ### Claim 2 (depends on 1) The sputtering target for a magnetic recording medium according to claim 1, containing, based on total metal phase components of the sputtering target for a magnetic recording medium, 1 mol % or more and 30 mol % or less of Pt and 0.5 mol % or more and 15 mol % or less of at least one or more selected from Cu and Ni; and comprising, based on the sputtering target for a magnetic recording medium as a whole, 25 vol % or more and 40 vol % or less of the oxide phase. ### Claim 3 A sputtering target for a magnetic recording medium, comprising: a metal phase containing Pt, at least one or more selected from Cu and Ni, and at least one or more selected from Cr, Ru, and B, with the balance being Co and incidental impurities; and an oxide phase containing at least B2O3. ### Claim 4 (depends on 3) The sputtering target for a magnetic recording medium according to claim 3, containing, based on total metal phase components of the sputtering target for a magnetic recording medium, 1 mol % or more and 30 mol % or less of Pt, 0.5 mol % or more and 15 mol % or less of at least one or more selected from Cu and Ni, and more than 0.5 mol % and 30 mol % or less of at least one or more selected from Cr, Ru, and B; and comprising, based on the sputtering target for a magnetic recording medium as a whole, 25 vol % or more and 40 vol % or less of the oxide phase. ### Claim 5 (depends on 1) The sputtering target for a magnetic recording medium according to claim 1, wherein the oxide phase further contains one or more oxides selected from TiO2, SiO2, Ta2O5, Cr2O3, Al2O3, Nb2O5, MnO, Mn3O4, CoO, Co3O4, NiO, ZnO, Y2O3, MoO2, WO3, La2O3, CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Yb2O3, Lu2O3, and ZrO2. ### Claim 6 (depends on 2) The sputtering target for a magnetic recording medium according to claim 2, wherein the oxide phase further contains one or more oxides selected from TiO2, SiO2, Ta2O5, Cr2O3, Al2O3, Nb2O5, MnO, Mn3O4, CoO, Co3O4, NiO, ZnO, Y2O3, MoO2, WO3, La2O3, CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Yb2O3, Lu2O3, and ZrO2. ### Claim 7 (depends on 3) The sputtering target for a magnetic recording medium according to claim 3, wherein the oxide phase further contains one or more oxides selected from TiO2, SiO2, Ta2O5, Cr2O3, Al2O3, Nb2O5, MnO, Mn3O4, CoO, Co3O4, NiO, ZnO, Y2O3, MoO2, WO3, La2O3, CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Yb2O3, Lu2O3, and ZrO2. ### Claim 8 (depends on 4) The sputtering target for a magnetic recording medium according to claim 4, wherein the oxide phase further contains one or more oxides selected from TiO2, SiO2, Ta2O5, Cr2O3, Al2O3, Nb2O5, MnO, Mn3O4, CoO, Co3O4, NiO, ZnO, Y2O3, MoO2, WO3, La2O3, CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Yb2O3, Lu2O3, and ZrO2.