# US 2021/0241998 A1 · Plasma processing apparatus and inner component of plasma processing apparatus and manufacturing method of inner component of plasma processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0241998 A1 - Document ID: US20210241998A1 - Status: Published application - Kind: A1 - Application number: 16/646,917 - Filed: 2019-04-12 - Published: 2021-08-05 - Earliest claimed: 2019-04-12 - Assignees: Hitachi High-Technologies Corporation - Applicants: Hitachi High-Technologies Corporation - Inventors: Tomoyuki TAMURA; Kazuyuki IKENAGA - Web page: https://patentgrep.com/patent/US20210241998A1 ## CPC - H01J 37/32495: {Means for protecting the vessel against plasma} - B01J 19/08: Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor (application of shock waves B01J3/08) - C23C 4/11: Oxides - C23C 4/134: Plasma spraying - C23C 24/04: Impact or kinetic deposition of particles - H01J 37/32: Gas-filled discharge tubes (heating by discharge H05B) - H10P 50/242: {of Group IV materials} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract There is provided a plasma processing apparatus that suppress the contamination of a sample and improves process yield or an inner component of a plasma processing apparatus or a manufacturing method for the inner component. A plasma processing apparatus processes a wafer which is a processing target placed in a processing chamber in an inside of a vacuum chamber using plasma formed from a processing gas supplied to an inside of the processing chamber. A surface of a component that is placed in the inside of the processing chamber and faces the plasma is made of a dielectric material. The dielectric material includes a first material that combines with the supplied processing gas and is volatilized and a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination. ## Claims ### Claim 1 A plasma processing apparatus that processes a wafer which is a processing target placed in a processing chamber in an inside of a vacuum chamber using plasma formed from a processing gas supplied to an inside of the processing chamber, wherein: a surface of a component that is placed in the inside of the processing chamber and faces the plasma is made of a dielectric material; and the dielectric material includes a first material that combines with the supplied processing gas and is volatilized and a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination. ### Claim 2 (depends on 1) The plasma processing apparatus according to claim 1, wherein the dielectric material includes the first material by an amount corresponding to a volume increased from a volume before the combination of the compound of the second material. ### Claim 3 (depends on 1) The plasma processing apparatus according to claim 1, wherein: the first material includes Si; and the second material includes Y. ### Claim 4 An inner component of a plasma processing apparatus, the inner component being placed in an inside of a processing chamber of the plasma processing apparatus that processes a wafer that is a processing target placed in the processing chamber in an inside of a vacuum chamber using plasma formed from a processing gas supplied to the inside of the processing chamber, wherein: a surface of the inner component that faces the plasma is made of a dielectric material; and the dielectric material includes a first material that combines with the supplied processing gas and is volatilized and a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination. ### Claim 5 (depends on 4) The inner component of a plasma processing apparatus according to claim 4, wherein the dielectric material includes the first material by an amount corresponding to a volume increased from a volume before the combination of the compound of the second material. ### Claim 6 (depends on 4) The inner component of a plasma processing apparatus according to claim 4, wherein: the first material includes Si; and the second material includes Y ### Claim 7 A manufacturing method for an inner component that is placed in a processing chamber in an inside of a vacuum chamber of a plasma processing apparatus that processes a wafer that is a processing target using plasma formed from a processing gas supplied to an inside of the processing chamber, wherein on a surface of the inner component, a dielectric material is formed in advance, the dielectric material including a first material that combines with the supplied processing gas and is volatilized and a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination. ### Claim 8 A manufacturing method for an inner component that is placed in a processing chamber in an inside of a vacuum chamber of a plasma processing apparatus that processes a wafer that is a processing target using plasma formed from a processing gas supplied to an inside of the processing chamber, wherein: on a surface of the inner component, a dielectric material is formed in advance, the dielectric material including a first material that combines with the supplied processing gas and is volatilized and a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination; and before the wafer is processed, a step of exposing a surface of the inner component to the plasma formed by supplying the processing gas to the inside of the processing chamber for a predetermined time to alter the surface. ### Claim 9 (depends on 8) The manufacturing method for an inner component of a plasma processing apparatus according to claim 8, wherein the dielectric material includes the first material by an amount corresponding to a volume increased from a volume before the combination of the compound of the second material.