# US 2021/0241841 A1 · Semiconductor device having a diode type electrical fuse (e-fuse) cell array

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- Number: US 2021/0241841 A1
- Document ID: US20210241841A1
- Status: Published application
- Kind: A1
- Application number: 17/237,907
- Filed: 2021-04-22
- Published: 2021-08-05
- Earliest claimed: 2019-10-29
- Assignees: Key Foundry Co., Ltd.
- Applicants: Key Foundry Co., Ltd.
- Inventors: Jong Min CHO; Sung Bum PARK; Kee Sik AHN; Seong Jun PARK
- Web page: https://patentgrep.com/patent/US20210241841A1

## CPC

- G11C 17/16: using electrically-fusible links
- G11C 17/18: Auxiliary circuits, e.g. for writing into memory
- H10B 20/25: One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
- H10W 20/493: {Fuses, i.e. interconnections changeable from conductive to non-conductive}
- H10W 42/00: Arrangements for protection of devices (arrangements for thermal protection H10W40/00)
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a first word line configured to perform a writing operation or a programing operation, a second word line configured to perform a read operation, a first switching device including a first gate electrode and a first node, a second switching device comprising a second gate electrode and a second node, an electrical fuse (e-fuse) disposed between the first node and the second node, and a diode coupled to the first node and the first word line, wherein the first gate electrode and the second gate electrode are coupled to the second word line.

## Claims

### Claim 1

A semiconductor device comprising:
an e-fuse formed on an insulation layer;
a first switching device formed on a first well region;
a diode formed on a second well region having a opposite conductivity type to a conductivity type of the first well region; and
a second switching device formed on a third well region having a same conductivity type as the conductivity type of the first well region.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, further comprising:
a guard ring that encloses the first switching device, the diode, the e-fuse and the second switching device.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the first switching device and the second switching device comprise n-type metal-oxide-semiconductor (NMOS) transistors.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, further comprising:
a first contact plug formed on the first switching device;
a second contact plug formed on the diode;
a third contact plug and a fourth contact plug formed on the e-fuse; and
a fifth contact plug formed on the second switching device.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, further comprising:
a first metal interconnection connecting the first contact plug, the second contact plug and the third contact plug; and
a second metal interconnection connecting the fourth contact plug and the fifth contact plug.

### Claim 6

A semiconductor device comprising:
an e-fuse formed on an insulation layer;
a first switching device formed on a first well region;
a diode formed on a second well region; and
a second switching device formed on a third well region.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, wherein the second well region has an opposite conductivity type to a conductivity type of the first well region.

### Claim 8 (depends on 6)

The semiconductor device of claim 6, wherein the third well region has a same conductivity type as a conductivity type of the first well region.

### Claim 9 (depends on 6)

The semiconductor device of claim 6, further comprising:
a guard ring that encloses the first switching device, the diode, the e-fuse and the second switching device.

### Claim 10 (depends on 6)

The semiconductor device of claim 6, wherein the first switching device and the second switching device comprise n-type metal-oxide-semiconductor (NMOS) transistors.