# US 2021/0241828 A1 · Configurable resistivity for lines in a memory device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0241828 A1 - Document ID: US20210241828A1 - Status: Published application - Kind: A1 - Application number: 16/781,975 - Filed: 2020-02-04 - Published: 2021-08-05 - Earliest claimed: 2020-02-04 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Koushik Banerjee; Isaiah O. Gyan; Robert Cassel; Jian Jiao; William L. Cooper; Jason R. Johnson; Michael P. O'Toole - Web page: https://patentgrep.com/patent/US20210241828A1 ## CPC - G11C 13/003: {Cell access} - G11C 13/0004: {comprising amorphous/crystalline phase transition cells} - G11C 13/0007: {comprising metal oxide memory material, e.g. perovskites} - G11C 13/0026: {Bit-line or column circuits} - G11C 13/0028: {Word-line or row circuits} - G11C 13/004: {Reading or sensing circuits or methods} - G11C 13/0069: {Writing or programming circuits or methods} - H10B 63/84: {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays} - G11C 2213/71: Three dimensional array - G11C 2213/79: Array wherein the access device being a transistor - G11C: STATIC STORES (semiconductor memory devices H10B) - H10B: ELECTRONIC MEMORY DEVICES ## Abstract Methods, systems, and devices supporting configurable resistivities for lines in a memory device, such as access lines in a memory array are described. For example, metal lines at different levels of a memory device may be oxidized to different extents in order for the lines at different levels of the memory device to have different resistivities. This may allow the resistivity of lines to be tuned on a level-by-level basis without altering the fabrication techniques and related parameters used to initially form the lines at the different levels, which may have benefits related to at least reduced cost and complexity. Lines may be oxidized to a controlled extent using either a dry or wet process. ## Claims ### Claim 1 A method, comprising: forming a first set of access lines for a memory device; oxidizing the first set of access lines to a first extent; forming, after oxidizing the first set of access lines, a second set of access lines for the memory device; and oxidizing the second set of access lines to a second extent. ### Claim 2 (depends on 1) The method of claim 1, wherein the second set of access lines are above the first set of access lines. ### Claim 3 (depends on 2) The method of claim 2, wherein the second extent is less than the first extent. ### Claim 4 (depends on 1) The method of claim 1, further comprising: forming a first deck of memory cells coupled with the first set of access lines; and forming a second deck of memory cells coupled with the second set of access lines. ### Claim 5 (depends on 1) The method of claim 1, wherein: oxidizing the first set of access lines comprises exposing the first set of access lines to plasma that comprises oxygen; and oxidizing the second set of access lines comprises exposing the second set of access lines to plasma that comprises oxygen. ### Claim 6 (depends on 5) The method of claim 5, wherein: the first set of access lines are exposed to plasma that comprises oxygen as part of a first dry etch process; and the second set of access lines are exposed to plasma that comprises oxygen as part of a second dry etch process. ### Claim 7 (depends on 5) The method of claim 5, wherein the first set of access lines and the second set of access lines are formed on a wafer, further comprising: applying a first voltage to the wafer while the first set of access lines are exposed to plasma that comprises oxygen, wherein the first extent is based at least in part on the first voltage; and applying a second voltage to the wafer while the second set of access lines are exposed to plasma that comprises oxygen, wherein the second extent is based at least in part on the second voltage. ### Claim 8 (depends on 5) The method of claim 5, wherein: the first set of access lines are exposed to plasma that comprises oxygen for a first amount of time, the first extent based at least in part on the first amount of time; and the second set of access lines are exposed to plasma that comprises oxygen for a second amount of time, the second extent based at least in part on the second amount of time. ### Claim 9 (depends on 5) The method of claim 5, wherein the first set of access lines and the second set of access lines are formed on a wafer, further comprising: heating the wafer to a first temperature while the first set of access lines are exposed to plasma that comprises oxygen, wherein the first extent is based at least in part on the first temperature; and heating the wafer to a second temperature while the second set of access lines are exposed to plasma that comprises oxygen, wherein the second extent is based at least in part on the second temperature. ### Claim 10 (depends on 5) The method of claim 5, further comprising: exciting the plasma to which the first set of access lines are exposed using a first amount of power, wherein the first extent is based at least in part on the first amount of power; and exciting the plasma to which the second set of access lines are exposed using a second amount of power, wherein the second extent is based at least in part on the second amount of power. ### Claim 11 (depends on 5) The method of claim 5, wherein: the first set of access lines are exposed to plasma that comprises oxygen under a first amount of pressure, the first extent based at least in part on the first amount of pressure; and the second set of access lines are exposed to plasma that comprises oxygen under a second amount of pressure, the second extent based at least in part on the second amount of pressure. ### Claim 12 (depends on 5) The method of claim 5, wherein: the first set of access lines are exposed to plasma that comprises oxygen in a first concentration, the first extent based at least in part on the first concentration; and the second set of access lines are exposed to plasma that comprises oxygen in a second concentration, the second extent based at least in part on the second concentration. ### Claim 13 (depends on 1) The method of claim 1, wherein: oxidizing the first set of access lines comprises exposing the first set of access lines to hydrogen peroxide; and oxidizing the second set of access lines comprises exposing the second set of access lines to hydrogen peroxide. ### Claim 14 (depends on 13) The method of claim 13, further comprising: exposing the first set of access lines to ammonium hydroxide while the first set of access lines are exposed to hydrogen peroxide; and exposing the second set of access lines to ammonium hydroxide while the second set of access lines set of access lines are exposed to hydrogen peroxide. ### Claim 15 (depends on 13) The method of claim 13, further comprising: exposing the first set of access lines to ammonium hydroxide before the first set of access lines are exposed to hydrogen peroxide; and exposing the second set of access lines to ammonium hydroxide before the second set of access lines set of access lines are exposed to hydrogen peroxide. ### Claim 16 (depends on 13) The method of claim 13, wherein: the first set of access lines are exposed to hydrogen peroxide for a first amount of time, the first extent based at least in part on the first amount of time; and the second set of access lines are exposed to hydrogen peroxide for a second amount of time, the second extent based at least in part on the second amount of time. ### Claim 17 (depends on 13) The method of claim 13, wherein: exposing the first set of access lines to hydrogen peroxide comprises exposing the first set of access lines to a first solution that comprises hydrogen peroxide in a first concentration, the first extent based at least in part on the first concentration; and exposing the second set of access lines to hydrogen peroxide comprises exposing the second set of access lines to a second solution that comprises hydrogen peroxide in a second concentration, the second extent based at least in part on the second concentration. ### Claim at position 18 18-22. (canceled) ### Claim 23 A method, comprising: forming a plurality of decks of memory cells; forming a plurality of sets of access lines, wherein each of the plurality of sets of access lines is coupled with at least one of the plurality of decks of memory cells; and oxidizing a set of access lines included in the plurality of sets of access lines. ### Claim 24 (depends on 23) The method of claim 23, further comprising: oxidizing a second set of access lines included in the plurality of sets of access lines, wherein; oxidizing the set of access lines comprises forming, within each access line of the set, a respective first layer of metal oxide that has a first thickness; and oxidizing the second set of access lines comprises forming, within each access line of the second set, a respective second layer of metal oxide that has a second thickness. ### Claim 25 (depends on 23) The method of claim 23, wherein: oxidizing the set of access lines is based at least in part on exposing the set of access lines to plasma comprising oxygen or exposing the set of access lines to hydrogen peroxide.