# US 2021/0240959 A1 · Semiconductor device with biofet and biometric sensors

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- Number: US 2021/0240959 A1
- Document ID: US20210240959A1
- Status: Published application
- Kind: A1
- Application number: 17/234,641
- Filed: 2021-04-19
- Published: 2021-08-05
- Earliest claimed: 2019-10-18
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Ching-Hui LIN; Chun-Ren Cheng; Jhubei Huang; Fu-Chun Huang
- Web page: https://patentgrep.com/patent/US20210240959A1

## CPC

- G01N 27/414: Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G06V 40/1306: {non-optical, e.g. ultrasonic or capacitive sensing}
- G01N 27/4145: {specially adapted for biomolecules, e.g. gate electrode with immobilised receptors}
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10N 30/071: Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate
- H10N 30/302: {Sensors}
- H10N 39/00: Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- G06V: IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
a gate electrode disposed on a first side of the substrate;
source and drain regions disposed within the substrate;
a channel region disposed between the source and drain regions;
a piezoelectric sensor disposed on a second side of the substrate, wherein the second side of the substrate is substantially parallel and opposite to the first side of the substrate; and
a temperature sensor disposed on the second side of the substrate.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the piezoelectric sensor comprises:
a first electrode disposed on the second side of the substrate;
a piezoelectric material layer disposed on the first electrode; and
a second electrode disposed on the piezoelectric material layer.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the piezoelectric sensor comprises an array of piezoelectric sensor regions.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the piezoelectric sensor comprises:
an isolation layer disposed on the second side of the substrate; and
a piezoelectric material layer disposed on the isolation layer.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the temperature sensor comprises a sensing electrode disposed on the second side of the substrate.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, further comprising a sensing well with capture reagents disposed on the channel region.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, further comprising a coupling layer disposed on the piezoelectric sensor.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, further comprising a cover plate disposed on the piezoelectric sensor.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, further comprising an array of resonators under the piezoelectric sensor.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, further comprising a resistive heater disposed on the first side of the substrate.

### Claim 11

A semiconductor device, comprising:
a substrate;
a bioFET sensor, comprising:
a gate electrode disposed on a first side of the substrate, and
a channel region disposed between source and drain regions within the substrate; and
a biometric sensor, comprising:
an array of piezoelectric sensor regions disposed over a second side of the substrate, wherein the second side of the substrate is substantially parallel and opposite to the first side of the substrate; and
a sensing layer disposed on the array of piezoelectric sensor regions.

### Claim 12 (depends on 11)

The semiconductor device of claim 11, further comprising a temperature sensor electrode disposed over the second side of the substrate.

### Claim 13 (depends on 12)

The semiconductor device of claim 12, further comprising an insulating layer disposed on the second side of the substrate, wherein the temperature sensor electrode is disposed on a first portion of the insulating layer and the array of piezoelectric sensor regions are disposed on a second portion of the insulating layer.

### Claim 14 (depends on 13)

The semiconductor device of claim 13, wherein the first and second portions of the insulating layer are separated from each other by the bioFET sensor.

### Claim 15 (depends on 11)

The semiconductor device of claim 11, wherein the array of piezoelectric sensor regions comprises:
an array of first electrodes disposed on the second side of the substrate;
an array of piezoelectric material layers disposed on the array of first electrodes; and
an array of second electrodes disposed on the array of piezoelectric material layers.

### Claim 16 (depends on 11)

The semiconductor device of claim 11, wherein the bioFET sensor comprises a sensing well with capture reagents disposed on the channel region.

### Claim 17

A semiconductor device, comprising:
a gate electrode disposed on a first side of a semiconductor substrate;
a channel region disposed between source and drain regions within the semiconductor substrate;
a piezoelectric sensor region disposed on a second side of the semiconductor substrate, wherein the second side is substantially parallel and opposite to the first side;
a temperature sensing electrode disposed on the second side of the semiconductor substrate;
a sensing well disposed on the channel region; and
capture reagents bound to the sensing well.

### Claim 18 (depends on 17)

The semiconductor device of claim 17, further comprising a contact opening between the piezoelectric sensor region and the sensing well.

### Claim 19 (depends on 17)

The semiconductor device of claim 17, further comprising an array of cavities under the piezoelectric sensor region.

### Claim 20 (depends on 17)

The semiconductor device of claim 17, wherein the piezoelectric sensor region comprises an array of piezoelectric sensor regions configured to detect a fingerprint pattern.