# US 2021/0240898 A1 · Power device and resistance simulation method therefor, and power device simulation tool

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- Number: US 2021/0240898 A1
- Document ID: US20210240898A1
- Status: Published application
- Kind: A1
- Application number: 17/053,550
- Filed: 2019-08-15
- Published: 2021-08-05
- Earliest claimed: 2018-08-22
- Assignees: Csmc Technologies Fab2 Co., Ltd.
- Applicants: Csmc Technologies Fab2 Co., Ltd.
- Inventors: Nan ZHANG; Jing ZHOU; Hao WANG; Zhan GAO; Maoqian ZHU; Cheng ZHOU; Zhijin LI; Lin WU; Shuming GUO; Yong HUANG
- Web page: https://patentgrep.com/patent/US20210240898A1

## CPC

- G06F 30/367: Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
- G06F 30/392: Floor-planning or layout, e.g. partitioning or placement
- G06F 30/398: Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36)
- G06F 30/39: Circuit design at the physical level (physical level design for reconfigurable circuits G06F30/347)
- G06F 2119/06: Power analysis or power optimisation
- G06F 2119/10: Noise analysis or noise optimisation
- Y02E 60/00: Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

The present application relates to a resistance simulation method for a power device, comprising: establishing an equivalent resistance model of a power device, wherein the connection relationship of N fingers is equivalent to N resistors Rb connected in parallel, input ends of adjacent resistors Rb are connected by means of a resistor Ra, output ends of adjacent resistors Rb are connected by means of a resistor Rc, R a = 1 N ⁢ R 0 , R c = 1 N ⁢ R 1 , and Rb=RDEV*N+RS+RD, wherein R0 and R1 are respectively resistances of a source metal strip and a drain metal strip, Rs is a metal resistor of a first intermediate layer connecting one source region to the source metal strip, RD is a metal resistor of a second intermediate layer connecting one drain region to the drain metal strip, and RDEV is the channel resistance of the power device; and calculating the resistance of the equivalent resistance model as the resistance of the power device.

## Claims

### Claim 1

A simulation method for a resistance of a power device, the power device comprising:
N finger structures, each of the finger structures comprises a source region and a drain region;
a top metal layer, comprising a source metal strip and a drain metal strip located at a top layer; and
an intermediate metal layer, comprising a first intermediate layer and a second intermediate layer, wherein the first intermediate layer connects each of the source regions to the source metal strip to lead out a common source, and the second intermediate layer connects each of the drain regions to the drain metal strip to lead out a common drain;
the simulation method for the resistance comprising:
establishing an equivalent resistance model of the power device according to a connection relationship of the N finger structures; wherein, the connection relationship of N fingers is equivalent to a parallel connection of N resistors Rb, current input terminals of adjacent resistors Rb are connected to each other through a resistor Ra, current output terminals of adjacent resistors Rb are connected to each other through a resistor Rc, the source is a current input terminal of a first resistor Rb, and the drain is a current output terminal of an Nth resistor Rb,
R
a
=
1
N
⁢
R
0
,
R
c
=
1
N
⁢
R
1
,
Rb=RDEV*N+RS+RD, wherein, R0 is a resistance of the source metal strip, R1 is a resistance of the drain metal strip, RS is a metal resistance of the first intermediate layer connecting a source region to the source metal strip, RD is a metal resistance of the second intermediate layer connecting a drain region to the drain metal strip, and RDEV is a channel resistance of the power device; and
calculating a resistance of the equivalent resistance model, the resistance of the power device is the resistance of the equivalent resistance model.

### Claim 2 (depends on 1)

The simulation method for the resistance of the power device of claim 1, wherein the intermediate metal layer comprises a first metal layer and a second metal layer, the first metal layer comprises first metal strips and second metal strips, the second metal layer comprises third metal strips and fourth metal strips, the first metal strips are connected to the source regions in a one-to-one correspondence, and the second metal strips are connected to the drain regions in a one-to-one correspondence, the third metal strips and the first metal strips are connected to each other in a one-to-one correspondence and are connected to the source metal strip, the fourth metal strips and the second metal strips are connected to each other in a one-to-one correspondence and are connected to the drain metal strip, the first metal strip and the third metal strip connected to each other constitute one of the first intermediate layers, and the second metal strip and the fourth metal strip connected to each other constitute one of the second intermediate layers, wherein the metal resistance RS of each of the first intermediate layers is the parallel resistance of the first metal strip and the third metal strip connected to each other, and the metal resistance RD of each of the second intermediate layers is the parallel resistance of the second metal strip and the fourth metal strip connected to each other.

### Claim 3 (depends on 2)

The simulation method for the resistance of the power device of claim 2, wherein the source metal strip and the drain metal strip have a same size, and R0=R1.

### Claim 4 (depends on 3)

The simulation method for the resistance of the power device according of claim 3, wherein the power device comprises three finger structures, and a resistance value of the equivalent resistance model is approximately
R
b
3
+
4
⁢
R
a
3
.

### Claim 5 (depends on 1)

The simulation method for the resistance of the power device of claim 1, wherein the resistance of the power device further comprises a resistance of a source metal lead and a resistance of a drain metal lead.

### Claim 6

A simulation method for a power device, the power device comprising:
N finger structures, each of the finger structures comprises a source region and a drain region;
a top metal layer, comprising a source metal strip and a drain metal strip located at a top layer; and
an intermediate metal layer, comprising a first intermediate layer and a second intermediate layer, wherein the first intermediate layer connects each of the source regions to the source metal strip to lead out a common source, and the second intermediate layer connects each of the drain regions to the drain metal strip to lead out a common drain;
the simulation method for the power device comprising:
step A: acquiring a resistance of the power device, and the method for acquiring the resistance of the power device comprising:
establishing an equivalent resistance model of the power device according to a connection relationship of the finger structures; wherein, the connection relationship of N fingers is equivalent to a parallel connection of N resistors Rb, current input terminals of adjacent resistors Rb are connected to each other through a resistor Ra, current output terminals of adjacent resistors Rb are connected to each other through a resistor Rc, the source is a current input terminal of a first resistor Rb, and the drain is a current output terminal of an Nth resistor Rb,
R
a
=
1
N
⁢
R
0
,
R
c
=
1
N
⁢
R
1
,
Rb=RDEV*N+RS+RD, wherein, R0 is a resistance of the source metal strip, R1 is a resistance of the drain metal strip, RS is a metal resistance of the first intermediate layer connecting a source region to the source metal strip, RD is a metal resistance of the second intermediate layer connecting a drain region to the drain metal strip, and RDEV is a channel resistance of the power device; and
calculating a resistance of the equivalent resistance model, the resistance of the power device is the resistance of the equivalent resistance model;
step B: reading the resistance of the power device and calculating a parasitic resistance of the power device, wherein the parasitic resistance of the power device is equal to the channel resistance of the power device subtracted from the resistance of the power device; and
step C: acquiring the parasitic resistance of the power device and performing pre-simulation on the power device according to the parasitic resistance of the power device.

### Claim 7 (depends on 6)

The simulation method of claim 6, further comprising, prior to acquiring the parasitic resistance of the power device, setting parameters of the power device and layout parameters, and generating a layout of the power device, and wherein the acquiring the resistance of the power device specifically comprises: acquiring the resistance of the power device under the current layout.

### Claim 8 (depends on 7)

The simulation method of claim 7, wherein,
setting the parameters of the power device comprises setting a length and a width of the power device; and
setting the layout parameters comprises setting a number of fingers of the power device and setting the metal layers.

### Claim 9 (depends on 6)

The simulation method of claim 6, further comprising: after acquiring the parasitic resistance of the power device, displaying the parasitic resistance on a parameter display interface.

### Claim 10 (depends on 6)

The simulation method of claim 6, wherein a simulation tool of the simulation method is a spectre simulation tool, and the acquiring the parasitic resistance of the power device specifically comprises writing the parasitic resistance into a spectre netlist to perform pre-simulation.

### Claim 11 (depends on 6)

The simulation method of claim 6, further comprising, prior to the simulation, determining the power device, and when a total channel width of the power device is greater than 5 mm or the channel impedance of the power device is less than 500 mΩ, using the simulation method to perform simulation on the power device.

### Claim 12

A simulation tool, configured to perform simulation on a power device, the power device comprising:
N finger structures, each of the finger structures comprises a source region and a drain region;
a top metal layer, comprising a source metal strip and a drain metal strip located at a top layer; and
an intermediate metal layer, comprising a first intermediate layer and a second intermediate layer, wherein the first intermediate layer connects each of the source regions to the source metal strip to lead out a common source, and the second intermediate layer connects each of the drain regions to the drain metal strip to lead out a common drain;
the simulation tool comprising:
a parameterization unit, comprising an algorithm unit, the algorithm unit being configured to establish an equivalent resistance model of the power device according to a connection relationship of the N finger structures, wherein, the connection relationship of N fingers is equivalent to a parallel connection of N resistors Rb, current input terminals of adjacent resistors Rb are connected to each other through a resistor Ra, current output terminals of adjacent resistors Rb are connected to each other through a resistor Rc, the source is a current input terminal of a first resistor Rb, and the drain is a current output terminal of an Nth resistor Rb, Ra=1/NR0, Rc=1/NR1, Rb=RDEV*N+RS+RD, wherein, R0 is a resistance of the source metal strip, R1 is a resistance of the drain metal strip, RS is a metal resistance of the first intermediate layer connecting a source region to the source metal strip, RD is a metal resistance of the second intermediate layer connecting a drain region to the drain metal strip, and RDEV is a channel resistance of the power device; and the algorithm unit being further configured to calculate a resistance of the equivalent resistance model, the resistance of the power device is the resistance of the equivalent resistance model and a parasitic resistance of the power device is acquired according to the resistance of the power device, wherein the parasitic resistance of the power device is equal to the channel resistance of the power device subtracted from the resistance of the power device; and
a pre-simulation unit, configured to read the parasitic resistance of the power device and perform pre-simulation on the power device according to the parasitic resistance.

### Claim 13 (depends on 12)

The simulation tool of claim 12, wherein the parameterization unit further comprises a parameter setting unit, and the parameter setting unit is configured to set parameters of the power device and layout parameters.

### Claim 14 (depends on 12)

The simulation tool of claim 12, further comprising a parameter display interface configured to display the parasitic resistance.

### Claim 15 (depends on 12)

The simulation tool of claim 12, wherein the pre-simulation unit comprises a spectre netlist, and the reading the parasitic resistance of the power device specifically comprises writing the parasitic resistance into the spectre netlist of pre-simulation.