# US 2021/0240089 A1 · Composite overlay metrology target > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0240089 A1 - Document ID: US20210240089A1 - Status: Published application - Kind: A1 - Application number: 16/996,254 - Filed: 2020-08-18 - Published: 2021-08-05 - Earliest claimed: 2020-01-30 - Assignees: KLA Corporation - Applicants: KLA Corporation - Inventors: Anna Golotsvan; Inna Tarshish-Shapir; Mark Ghinovker; Rawi Dirawi - Web page: https://patentgrep.com/patent/US20210240089A1 ## CPC - G03F 7/70633: {Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching} - G01N 21/47: Scattering, i.e. diffuse reflection (G01N21/25, G01N21/41 take precedence {G01N21/55 takes precedence}) - G01N 21/956: Inspecting patterns on the surface of objects {(contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)} - G01N 23/2251: using incident electron beams, e.g. scanning electron microscopy [SEM] - G03F 7/70608: {Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist} - G03F 7/70683: {Mark designs} - G01N 21/95623: {using a spatial filtering method (per se G02B)} - G01N 2223/07: secondary emission - G01N 2223/6113: printed circuit board [PCB] - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract A metrology target includes a first set of pattern elements compatible with a first metrology mode along one or more directions, and a second set of pattern elements compatible with a second metrology mode along one or more directions, wherein the second set of pattern elements includes a first portion of the first set of pattern elements, and wherein the second set of pattern elements is surrounded by a second portion of the first set of pattern elements not included in the second set of pattern elements. ## Claims ### Claim 1 A metrology target comprising: a first set of pattern elements, wherein the first set of pattern elements are compatible with a first metrology mode along one or more directions; and a second set of pattern elements, wherein the second set of pattern elements is compatible with a second metrology mode along one or more directions, wherein the second set of pattern elements includes a first portion of the first set of pattern elements, and wherein the second set of pattern elements is surrounded by a second portion of the first set of pattern elements not included in the second set of pattern elements. ### Claim 2 (depends on 1) The metrology target of claim 1, wherein at least some of the first set of pattern elements are segmented. ### Claim 3 (depends on 1) The metrology target of claim 1, wherein at least some of the second set of pattern elements are segmented. ### Claim 4 (depends on 1) The metrology target of claim 1, wherein at least some of the second set of pattern elements are divided into two or more sets of segmented portions. ### Claim 5 (depends on 1) The metrology target of claim 1, wherein the first metrology mode comprises an optical metrology mode. ### Claim 6 (depends on 1) The metrology target of claim 1, wherein the first metrology mode comprises at least one of advanced imaging metrology (AIM) or triple advanced imaging metrology (Triple AIM). ### Claim 7 (depends on 1) The metrology target of claim 1, wherein the second metrology mode comprises at least one of an optical metrology mode or a particle-beam based metrology mode. ### Claim 8 (depends on 7) The metrology target of claim 7, wherein the second metrology mode comprises advanced imaging metrology in-die (AlMid) metrology. ### Claim 9 (depends on 7) The metrology target of claim 7, wherein the second metrology mode comprises electron-beam metrology. ### Claim 10 (depends on 1) The metrology target of claim 1, further comprising a third set of pattern elements compatible with a third metrology mode along one or more directions, wherein the third set of pattern elements surrounds at least a portion of the first set of pattern elements. ### Claim 11 (depends on 10) The metrology target of claim 10, wherein the third metrology mode comprises scatterometry-based overlay (SCOL) metrology. ### Claim 12 A system comprising: one or more metrology sub-systems, wherein the one or more metrology sub-systems are configured to acquire one or more metrology signals from one or more metrology targets of a sample, the one or more metrology sub-systems comprising: an illumination source; one or more illumination elements configured to direct an illumination beam from the illumination source onto the sample; one or more detectors; and one or more projection elements configured to collect illumination emanating from the sample and direct the illumination to the one or more detectors; and one or more controllers having one or more processors communicatively coupled to the one or more detectors, wherein the one or more processors are configured to execute a set of program instructions maintained in memory, wherein the set of program instructions is configured to cause the one or more processors to: receive, from the one or more metrology sub-systems operating in a first metrology mode, one or more signals indicative of the illumination emanating from a first set of pattern elements of one or more metrology targets of the sample, receive, from the one or more metrology sub-systems operating in a second metrology mode, one or more signals indicative of illumination emanating from a second set of pattern elements of the one or more metrology targets, wherein the one or more metrology targets of the sample comprise: the first set of pattern elements, wherein the first set of pattern elements is compatible with the first metrology mode along one or more directions; and the second set of pattern elements, wherein the second set of pattern elements is compatible with the second metrology mode along one or more directions, wherein the second set of pattern elements includes a first portion of the first set of pattern elements, and wherein the second set of pattern elements is surrounded by a second portion of the first set of pattern elements not included in the second set of pattern elements; determine one or more overlay parameters of the first set of pattern elements based on one or more signals acquired from the first set of pattern elements in the first metrology mode; and determine one or more overlay parameters of the second set of pattern elements based on one or more signals acquired from the second set of pattern elements in the second metrology mode. ### Claim 13 (depends on 12) The system of claim 12, wherein at least some of the first set of pattern elements are segmented. ### Claim 14 (depends on 12) The system of claim 12, wherein at least some of the second set of pattern elements are segmented. ### Claim 15 (depends on 12) The system of claim 12, wherein at least some of the second set of pattern elements are divided into two or more sets of segmented portions. ### Claim 16 (depends on 12) The system of claim 12, wherein the one or more metrology sub-systems comprise: an optical metrology tool. ### Claim 17 (depends on 12) The system of claim 12, wherein the one or more metrology sub-systems comprise: an optical metrology tool; and a particle-based metrology tool. ### Claim 18 (depends on 12) The system of claim 12, wherein the one or more metrology sub-systems comprise: an optical metrology tool; a particle-based metrology tool; and a scatterometry-based overlay (SCOL) metrology tool. ### Claim 19 (depends on 16) The system of claim 16, wherein the first metrology mode comprises an optical metrology mode. ### Claim 20 (depends on 16) The system of claim 16, wherein the first metrology mode comprises at least one of advanced imaging metrology (AIM) or triple advanced imaging metrology (Triple AIM). ### Claim 21 (depends on 17) The system of claim 17, wherein the second metrology mode comprises at least one of an optical metrology mode or a particle-beam based metrology mode. ### Claim 22 (depends on 17) The system of claim 17, wherein the second metrology mode comprises advanced imaging metrology in-die (AIMid) metrology. ### Claim 23 (depends on 17) The system of claim 17, wherein the second metrology mode comprises electron-beam metrology. ### Claim 24 (depends on 12) The system of claim 12, wherein the one or more metrology targets further comprise a third set of pattern elements compatible with a third metrology mode along one or more directions, wherein the third set of pattern elements surrounds at least a portion of the first set of pattern elements. ### Claim 25 (depends on 24) The system of claim 24, wherein the third metrology mode comprises: scatterometry-based overlay (SCOL) metrology. ### Claim 26 (depends on 25) The system of claim 25, wherein the one or more controllers are configured to determine one or more overlay parameters of the third set of pattern elements using the third metrology mode based on one or more signals from the one or more metrology sub-systems. ### Claim 27 (depends on 12) The system of claim 12, wherein the one or more processors are configured to execute program instructions to cause the one or more processors to provide one or more overlay correctables based on the one or more overlay parameters. ### Claim 28 A method of measuring overlay comprising: illuminating a sample having one or more metrology targets; detecting, in a first metrology mode, illumination emanating from a first set of pattern elements of the one or more metrology targets of the sample; detecting, in a second metrology mode, illumination emanating from a second set of pattern elements of the one or more metrology targets of the sample; determining one or more overlay parameters of the first set of pattern elements based on the illumination emanating from the first set of pattern elements; and determining one or more overlay parameters of the second set of pattern elements based on the illumination emanating from the second set of pattern elements. ### Claim 29 (depends on 28) The method of measuring overlay of claim 28, wherein at least some of the first set of pattern elements are segmented. ### Claim 30 (depends on 28) The method of measuring overlay of claim 28, wherein at least some of the second pattern elements are segmented. ### Claim 31 (depends on 28) The method of measuring overlay of claim 28, wherein at least some of the second pattern elements are divided into two or more sets of segmented portions. ### Claim 32 (depends on 28) The method of measuring overlay of claim 28, wherein the first metrology mode comprises an optical metrology mode. ### Claim 33 (depends on 28) The method of measuring overlay of claim 28, wherein the first metrology mode comprises at least one of advanced imaging metrology (AIM) or triple advanced imaging metrology (Triple AIM). ### Claim 34 (depends on 28) The method of measuring overlay of claim 28, wherein the second metrology mode comprises at least one of an optical metrology mode or a particle-beam based metrology mode. ### Claim 35 (depends on 28) The method of measuring overlay of claim 28, wherein the second metrology mode comprises advanced imaging metrology in-die (AlMid) metrology. ### Claim 36 (depends on 28) The method of measuring overlay of claim 28, wherein the second metrology mode comprises electron-beam metrology. ### Claim 37 (depends on 28) The method of measuring overlay of claim 28, further comprising detecting, in a third metrology mode, illumination emanating from a third set of pattern elements of the one or more metrology targets of the sample, and determining one or more overlay parameters of the third set of pattern elements of the one or more metrology targets of the sample based on the illumination emanating from the third set of pattern elements. ### Claim 38 (depends on 37) The method of measuring overlay of claim 37, wherein the third metrology mode comprises: scatterometry-based overlay (SCOL) metrology. ### Claim 39 A method of forming a metrology target comprising: forming a first set of pattern elements, wherein the first set of pattern elements are compatible with a first metrology mode along one or more directions; and forming a second set of pattern elements, wherein the second set of pattern elements is compatible with a second metrology mode along one or more directions, wherein the second set of pattern elements includes a first portion of the first set of pattern elements, and wherein the second set of pattern elements is surrounded by a second portion of the first set of pattern elements not included in the second set of pattern elements. ### Claim 40 (depends on 39) The method of forming a metrology target of claim 39, wherein at least some of the first set of pattern elements are segmented. ### Claim 41 (depends on 39) The method of forming a metrology target of claim 39, wherein at least some of the second pattern elements are segmented. ### Claim 42 (depends on 39) The method of forming a metrology target of claim 39, wherein at least some of the second pattern elements are divided into two or more sets of segmented portions. ### Claim 43 (depends on 39) The method of forming a metrology target of claim 39, wherein the first metrology mode comprises an optical mode of measurement. ### Claim 44 (depends on 39) The method of forming a metrology target of claim 39, wherein the first metrology mode comprises at least one of advanced imaging metrology (AIM) or triple advanced imaging metrology (Triple AIM). ### Claim 45 (depends on 39) The method of forming a metrology target of claim 39, wherein the second metrology mode comprises at least one of an optical metrology mode or a particle-beam based metrology mode. ### Claim 46 (depends on 45) The method of forming a metrology target of claim 45, wherein the second metrology mode comprises advanced imaging metrology in-die (AlMid) metrology. ### Claim 47 (depends on 45) The method of forming a metrology target of claim 45, wherein the second metrology mode comprises electron-beam metrology. ### Claim 48 (depends on 39) The method of forming a metrology target of claim 39, further comprising forming a third set of pattern elements compatible with a third metrology mode along one or more directions, wherein the third set of pattern elements surrounds at least a portion of the first set of pattern elements. ### Claim 49 (depends on 48) The method of forming a metrology target of claim 48, wherein the third metrology mode comprises scatterometry-based overlay (SCOL) metrology.