# US 2021/0240083 A1 · Nonlinear Scattering Lithography > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0240083 A1 - Document ID: US20210240083A1 - Status: Published application - Kind: A1 - Application number: 16/781,922 - Filed: 2020-02-04 - Published: 2021-08-05 - Earliest claimed: 2020-02-04 - Assignees: Vathys, Inc. - Applicants: Vathys, Inc. - Inventors: Tapabrata Ghosh - Web page: https://patentgrep.com/patent/US20210240083A1 ## CPC - G03F 7/2008: {characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used} - G03F 7/70383: {Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams (maskless lithography using a programmable mask G03F7/70291)} - G03F 7/2006: {using coherent light; using polarised light} - G03F 7/201: {characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask} - G03F 7/2053: {using a laser (ablative removal B41C)} - G03F 7/702: {Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems} - G03F 7/70408: {Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect} - H10P 76/2042: {using lasers} - H10P 76/2045: {Electron beam lithography processes} - H10P 76/2049: {Ion beam lithography processes} - G02F 1/35: Non-linear optics - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS ## Abstract Disclosed are systems and methods for achieving sub-diffraction limit resolutions for fabrication of integrated circuits using multiphoton lithography. In one embodiment, a photolithography system is disclosed. The system includes a light source, which can generate and emit laser beams at various wavelengths; a reflector configured to receive the laser beams and focus the laser beams on a condensing lens; a scattering medium, configured to receive the laser beams and generate scattered laser beams; and a wave-front shaping module, configured to receive the scattered laser beams and generate a focused laser beam in a photoresist material deposited on a silicon wafer. ## Claims ### Claim 1 A photolithography system comprising: a light source, configured to emit laser beams at a plurality of wavelengths; a reflector configured to receive the laser beams and focus the laser beams on a condensing lens; a scattering medium, configured to receive the laser beams and generate scattered laser beams; a wave-front shaping module, configured to receive the scattered laser beams and generate a focused laser beam on a silicon wafer, wherein the silicon wafer comprises a nonlinear photoresist material, wherein the nonlinear photoresist material interacts with the focused laser beam to form a pattern in the nonlinear photoresist material, wherein the light source is configured to vary the wavelength of the emitted lasers based at least partly on the pattern to be formed in the nonlinear photoresist material. ### Claim 2 (depends on 1) The system of claim 1, wherein the reflector comprises a digital mirror device, configured to reflect laser beams based at least partly on the pattern to be formed in the nonlinear photoresist material. ### Claim 3 The system of claim, 1, wherein the wave-front shaping module further comprises: a photolithography mask, comprising the pattern to be formed in the nonlinear photoresist material; and a distortion compensation pattern configured to receive the scattered laser beams and generate a focused laser beam on the nonlinear photoresist material, based at least partly on the pattern to be formed in the nonlinear photoresist material. ### Claim 4 (depends on 1) The system of claim 1, further comprising a photolithography mask, comprising the pattern to be formed on the nonlinear photoresist material. ### Claim 5 (depends on 1) The system of claim 1, wherein the wave-front shaping module comprises one or more of a holographic mask, a normal mask, a digital micrometer device, and a spatial light modulator. ### Claim 6 (depends on 1) The system of claim 1, wherein the wave-front shaping module comprises an array of phase-modulated segments, whose positions and phase can be adjusted with a learning feedback algorithm to generate the focused laser beam and focus the same on or within the nonlinear photoresist material. ### Claim 7 (depends on 1) The system of claim 1, further comprising a processor configured to: generate a transmission matrix based on input/output response of the scattering medium; determine a correlation between the transmission matrix and the scrambled laser beams; and based on the correlation configure the wave-front shaping module to receive the scattered laser beams and generate a focused laser beam on or within the nonlinear photoresist material, wherein the processor is further configured to modulate the wavelength of the laser beams emitted from the light source based at least partly on the pattern to be formed in the nonlinear photoresist material. ### Claim 8 (depends on 1) The system of claim 1, wherein the wave-front shaping module is configured to receive the scattered laser beams and generate a focused laser beam based on approximation by a linear distortion matrix, in frequency, spatial or basis domains. ### Claim 9 (depends on 1) The system of claim 1, wherein the light source is replaced with a charged particle generator generating a beam of charged particles in lieu of laser beams, wherein the charged particles pass through the scattering medium and the wave-front shaping module providing a beam with focused with sub-diffraction limit resolution on the nonlinear photoresist material deposited on the silicon wafer. ### Claim 10 A method of photolithography comprising: depositing a nonlinear photoresist material on a silicon wafer; selectively emitting laser beams from a light source at a plurality of wavelengths, wherein the wavelengths are chosen based at least partly on a pattern to be formed in the nonlinear photoresist material; reflecting the laser beams by a reflector; receiving the laser beams by a condensing lens; scattering the laser beams by a scattering medium, generating scattered laser beams; and receiving the scattered laser beams by a wave-front shaping module and generating a focused laser beam on or within the nonlinear photoresist material deposited on the silicon wafer. ### Claim 11 (depends on 10) The method of claim 10, wherein the reflector comprises a digital mirror device, configured to reflect laser beams based at least partly on an input image, comprising the pattern to be formed on or within the nonlinear photoresist material deposited on the silicon wafer. ### Claim 12 The method of claim, 10, wherein the wave-front shaping module further comprises: a photolithography mask, comprising the pattern to be formed in the nonlinear photoresist material deposited on the silicon wafer; and a distortion compensation pattern configured to receive the scattered laser beams and generate a focused laser beam in the nonlinear photoresist material deposited on the silicon wafer, based at least partly on the pattern to be formed in the nonlinear photoresist material. ### Claim 13 (depends on 10) The method of claim 10, further comprising providing a photolithography mask, comprising the pattern to be formed in the nonlinear photoresist material deposited on the silicon wafer. ### Claim 14 (depends on 10) The method of claim 10, wherein the wave-front shaping module comprises one or more of a holographic mask, a normal mask, a digital micrometer device, and a spatial light modulator. ### Claim 15 (depends on 10) The method of claim 10, wherein the wave-front shaping module comprises an array of phase-modulated segments, whose positions and phase can be adjusted with a learning feedback algorithm to generate the focused laser beam on the silicon wafer. ### Claim 16 (depends on 10) The method of claim 10, wherein a processor is further configured to: generate a transmission matrix based on input/output response of the scattering medium; determine a correlation between the transmission matrix and the scrambled laser beams; based on the correlation configure the wave-front shaping module to receive the scattered laser beams and generate a focused laser beam in nonlinear photoresist material deposited on the silicon wafer; and modulating the wavelength of the laser beams emitted from the light source based at least partly on the pattern to be formed in the nonlinear photoresist material. ### Claim 17 (depends on 10) The method of claim 10, wherein the wave-front shaping module is configured to receive the scattered laser beams and generate a focused laser beam based on approximation by a linear distortion matrix, in frequency, spatial or basis domains. ### Claim 18 (depends on 10) The method of claim 10, wherein the light source is replaced with a charged particle generator generating a beam of charged particles in lieu of laser beams, wherein the charged particles pass through the scattering medium and the wave-front shaping module providing a beam with focused with sub-diffraction limit resolution in the nonlinear photoresist material deposited on the silicon wafer. ### Claim 19 A photolithography system, comprising: means for emitting laser beams from a light source at a plurality of wavelengths; means for reflecting the laser beams by a reflector; means for receiving the laser beams by a condensing lens; means for scattering the laser beams by a scattering medium, generating scattered laser beams; and means for receiving the scattered laser beams by a scattering medium and generating a focused laser beam in a nonlinear photoresist material deposited on a silicon wafer. ### Claim 20 (depends on 19) The system of claim 19, wherein the wave-front shaping module further comprises: a photolithography mask, comprising a pattern to be formed in the photoresist material deposited on the silicon wafer; and a distortion compensation pattern configured to receive the scattered laser beams and generate a focused laser beam in the photoresist material deposited on the silicon wafer, based at least partly on the pattern.