# US 2021/0240082 A1 · Resist underlayer composition, and method of forming patterns using the composition

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- Number: US 2021/0240082 A1
- Document ID: US20210240082A1
- Status: Published application
- Kind: A1
- Application number: 17/153,095
- Filed: 2021-01-20
- Published: 2021-08-05
- Earliest claimed: 2020-01-31
- Assignees: Samsung SDI Co., Ltd.
- Applicants: Samsung SDI Co., Ltd.
- Inventors: Jaeyeol BAEK; Soonhyung KWON; Minsoo KIM; Hyeon PARK; Shinhyo BAE; Daeseok SONG; Yoojeong CHOI
- Web page: https://patentgrep.com/patent/US20210240082A1

## CPC

- C07D 251/30: Only oxygen atoms
- G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)}
- C07D 251/32: Cyanuric acid; Isocyanuric acid
- G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}
- G03F 7/091: {characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement}
- G03F 7/094: {Multilayer resist systems, e.g. planarising layers}
- G03F 7/168: {Finishing the coated layer, e.g. drying, baking, soaking}
- G03F 7/26: Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence)
- C07D: HETEROCYCLIC COMPOUNDS (macromolecular compounds C08)
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.

## Claims

### Claim 1

A resist underlayer composition comprising:
a polymer comprising a structural unit represented by Chemical Formula 1; and
a solvent:
wherein, in Chemical Formula 1,
L1, L2, and L3 are each independently a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C1 to C10 heteroalkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C2 to C20 heterocycloalkylene group, a substituted or unsubstituted C6 to C20 arylene group, a substituted or unsubstituted C1 to C10 heteroarylene group, a carbonyl group, an ester group, or a combination thereof,
R is hydrogen, deuterium, a halogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C1 to C10 heteroalkyl group, a substituted or unsubstituted C2 to C20 heteroalkenyl group, a substituted or unsubstituted C3 to C20 heterocycloalkyl group, or a substituted or unsubstituted C6 to C20 heteroaryl group,
X1 and X2 are each independently a halogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 heteroalkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 heterocycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a substituted or unsubstituted C6 to C20 heteroaryl group, provided that at least one of X1 or X2 is a halogen,
k is an integer of 1 to 10, and
* is a linking point.

### Claim 2 (depends on 1)

The resist underlayer composition of claim 1, wherein L1, L2, and L3 are each independently a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C1 to C10 heteroalkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C2 to C20 heterocycloalkylene group, a carbonyl group, an ester group, or a combination thereof.

### Claim 3 (depends on 2)

The resist underlayer composition of claim 2, wherein at least one of L1, L2, or L3 is a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C1 to C10 heteroalkylene group, a carbonyl group, or a combination thereof.

### Claim 4 (depends on 1)

The resist underlayer composition of claim 1, wherein:
one of X1 and X2 is a halogen, and
the other of X1 and X2 is a halogen-substituted C1 to C10 alkyl group, a halogen-substituted C1 to C10 heteroalkyl group, a halogen-substituted C3 to C20 cycloalkyl group, or a halogen-substituted C3 to C20 heterocycloalkyl group.

### Claim 5 (depends on 1)

The resist underlayer composition of claim 1, wherein the structural unit represented by Chemical Formula 1 comprises a structural unit represented by Chemical Formula 2:
and
wherein, in Chemical Formula 2,
L11 and L13 are each independently a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C1 to C10 heteroalkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C2 to C20 heterocycloalkylene group, a carbonyl group, an ester group, or a combination thereof,
L12 is a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C1 to C10 heteroalkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, or a substituted or unsubstituted C2 to C20 heterocycloalkylene group,
R1 is hydrogen, deuterium, a halogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C1 to C10 heteroalkyl group, a substituted or unsubstituted C3 to C20 heterocycloalkyl group, or a substituted or unsubstituted C6 to C20 heteroaryl group,
X11 and X12 are each independently a halogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 heteroalkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, or a substituted or unsubstituted C3 to C20 heterocycloalkyl group, provided that at least one of X11 or X12 is a halogen,
k1 is an integer of 1 to 10,
n is an integer of 2 to 100, and
* is a linking point.

### Claim 6 (depends on 1)

The resist underlayer composition of claim 1, wherein the polymer comprises one or more structural units represented by Chemical Formulae 3 to 6:
and
wherein, in Chemical Formulae 3 to 6, * is a linking point.

### Claim 7 (depends on 1)

The resist underlayer composition of claim 1, wherein the polymer has a weight average molecular weight (Mw) of about 1,000 g/mol to about 100,000 g/mol.

### Claim 8 (depends on 1)

The resist underlayer composition of claim 1, wherein the polymer is comprised in an amount of about 0.1 wt % to about 50 wt % based on a total amount of the resist underlayer composition.

### Claim 9 (depends on 1)

The resist underlayer composition of claim 1, wherein the resist underlayer composition further comprises at least one polymer selected from an acrylic resin, an epoxy resin, a novolac resin, a glycoluril resin, and a melamine resin.

### Claim 10 (depends on 1)

The resist underlayer composition of claim 1, further comprising an additive comprising a surfactant, a thermal acid generator, a plasticizer, or a combination thereof.

### Claim 11 (depends on 1)

A method of forming patterns, the method comprising:
forming an etching target layer on the substrate,
coating the resist underlayer composition of claim 1 on the etching target layer to form a resist underlayer,
forming a photoresist pattern on the resist underlayer, and
sequentially etching the resist underlayer and the etching target layer utilizing the photoresist pattern as an etching mask.

### Claim 12 (depends on 11)

The method of claim 11, wherein the forming of the photoresist pattern comprises:
forming a photoresist layer on the resist underlayer;
exposing the photoresist layer; and
developing the photoresist layer.

### Claim 13 (depends on 11)

The method of claim 11, wherein the forming of the resist underlayer further comprises heat treating at about 100° C. to about 500° C. after coating the resist underlayer composition.