# US 2021/0240073 A1 · Method for performing a manufacturing process and associated apparatuses > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0240073 A1 - Document ID: US20210240073A1 - Status: Published application - Kind: A1 - Application number: 16/972,073 - Filed: 2019-04-29 - Published: 2021-08-05 - Earliest claimed: 2018-06-25 - Assignees: ASML Netherlands B.V. - Applicants: Asml Netherlands B.V. - Inventors: Thomas THEEUWES; Koenraad VAN INGEN SCHENAU; Pieter Joseph Marie WOLTGENS - Web page: https://patentgrep.com/patent/US20210240073A1 ## CPC - G03F 1/70: Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging - G03F 7/70283: {Mask effects on the imaging process} - G03F 7/70466: {Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature (stitching G03F7/70475)} - G03F 7/70475: {Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display} - G03F 7/705: {Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method for assigning features into at least first features and second features, the first features being for at least one first patterning device configured for use in a lithographic process to form corresponding first structures on a substrate and the second features being for at least one second patterning device configured for use in a lithographic process to form corresponding second structures on a substrate, wherein the method including assigning the features into the first features and the second features based on a patterning characteristic of the features. ## Claims ### Claim 1 A method for assigning features into at least first features and second features, the first features being for at least one first patterning device configured for use in a lithographic process to form corresponding first structures on a substrate and the second features being for at least one second patterning device configured for use in a lithographic process to form corresponding second structures on the substrate, wherein the method comprises assigning the features into the first features and the second features based on a patterning characteristic of the features, wherein the patterning characteristic relates to an expected quality of patterning of the first structures and the second structures based on a corresponding process setting. ### Claim 2 (canceled) ### Claim 3 (depends on 1) The method as claimed in claim 1, further comprising: performing an assessment of the expected quality of patterning of the first structures and the second structures based on the corresponding process setting; and performing the assignment of the features based on the assessment. ### Claim 4 (depends on 3) The method as claimed in claim 3, wherein the s performing the assessment comprises simulating patterning of the first structures and the second structures onto a substrate. ### Claim 5 (depends on 3) The method as claimed in claim 3, wherein the assessment is based on imposed design rules for the first features and second features. ### Claim 6 (depends on 3) The method as claimed in claim 3, wherein the assessment is based on a degree of regularity of subsets of the features. ### Claim 7 (depends on 1) The method as claimed in claim 1, wherein the process setting relates to an illumination and/or a patterning process setting. ### Claim 8 (depends on 1) The method as claimed in claim 1, wherein the process setting comprises one or more selected from: an illumination profile, a polarization setting, a focus setting, a dose setting, an etch setting and/or a post-bake exposure setting. ### Claim 9 (depends on 1) The method as claimed in claim 1, wherein the process setting relates to one or more selected from: an alignment sensor setting, a metrology strategy, a metrology setting, a control model, and/or an optical processing control setting. ### Claim 10 (depends on 1) The method as claimed in claim 1, further comprising arranging the first features on the at least one first patterning device in one or more first functional sub-regions, and the second features on the at least one second patterning device in one or more second functional sub-regions, the functional sub-regions being differentiated by their intended function. ### Claim 11 (depends on 10) The method as claimed in claim 10, wherein the first functional sub-regions relate to memory or graphical processing unit circuitry and the second functional sub-regions relate to logic or central processing unit circuitry. ### Claim 12 (depends on 1) The method as claimed in claim 1, comprising arranging the first features on the at least one first patterning device outside of a boundary region defined along a boundary of the at least one first patterning device and arranging the second features on the at least one second patterning device outside of a boundary region defined along a boundary of the at least one second patterning device. ### Claim 13 (depends on 1) The method as claimed in claim 1, further comprising: using the at least one first patterning device to form first structures in a first layer on a first sub-field on the substrate in a first patterning process; and using the at least one second patterning device to form second structures in the first layer on a second sub-field on the substrate in a second patterning process, wherein at least one process setting is varied between the first patterning process and the second patterning process, and wherein the first sub-field and second sub-field comprise substantially adjacent sub-fields. ### Claim 14 (canceled) ### Claim 15 A non-transient computer program carrier comprising instructions, that when executed by a computing system, are configured to cause the computing system to at least: assign features into at least first features and second features, the first features being for at least one first patterning device configured for use in a lithographic process to form corresponding first structures on a substrate and the second features being for at least one second patterning device configured for use in a lithographic process to form corresponding second structures on the substrate, wherein the features are assigned into the first features and the second features based on a patterning characteristic of the features relating to an expected quality of patterning of the first structures and the second structures based on a corresponding process setting. ### Claim 16 (depends on 15) The computer program carrier as claimed in claim 15, wherein the instructions are further configured to cause the computing system to: perform an assessment of the expected quality of patterning of the first structures and the second structures based on the corresponding process setting; and perform the assignment of the features based on the assessment. ### Claim 17 (depends on 16) The computer program carrier as claimed in claim 16, wherein the instructions configured to cause the computing system to perform the assessment are further configured to cause the computing system to simulate patterning of the first structures and the second structures onto a substrate. ### Claim 18 (depends on 15) The computer program carrier as claimed in claim 15, wherein the instructions are further configured to cause the computing system to arrange the first features on the at least one first patterning device in one or more first functional sub-regions, and arrange the second features on the at least one second patterning device in one or more second functional sub-regions, the functional sub-regions being differentiated by their intended function. ### Claim 19 (depends on 15) The computer program carrier as claimed in claim 15, wherein the instructions are further configured to cause the computer system to arrange the first features on the at least one first patterning device outside of a boundary region defined along a boundary of the at least one first patterning device and arrange the second features on the at least one second patterning device outside of a boundary region defined along a boundary of the at least one second patterning device. ### Claim 20 A set of patterning devices comprising: at least one first patterning device comprising first features configured for use in a lithographic process to form corresponding first structures on a substrate, wherein the first features comprise a first patterning characteristic; and at least one second patterning device comprising second features configured for use in a lithographic process to form corresponding second structures on a substrate, wherein the second features comprise a second patterning characteristic, wherein the first features form a first pattern and the second features form a second pattern, the first and second patterns being complementary patterns for forming a layer of a device, and wherein the first and second patterning characteristics relate to an expected quality of patterning of the first structures and the second structures based on a corresponding process setting. ### Claim 21 (depends on 20) The set of patterning devices according to claim 20, wherein the process setting relates to an illumination and/or patterning step setting. ### Claim 22 (depends on 21) The set of patterning devices according to claim 21, wherein the illumination and/or patterning step setting comprises one or more selected from: an illumination profile, a polarization setting, a focus setting or a dose setting.