# US 2021/0240069 A1 · Extreme ultraviolet mask and method of manufacturing the same

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- Number: US 2021/0240069 A1
- Document ID: US20210240069A1
- Status: Published application
- Kind: A1
- Application number: 17/216,526
- Filed: 2021-03-29
- Published: 2021-08-05
- Earliest claimed: 2017-09-29
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Yun-Yue LIN
- Web page: https://patentgrep.com/patent/US20210240069A1

## CPC

- G03F 1/22: Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F 1/24: Reflection masks; Preparation thereof
- G03F 1/38: Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F 1/54: Absorbers, e.g. of opaque materials
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A method of manufacturing an extreme ultraviolet mask, including forming a multilayer Mo/Si stack including alternating Mo and Si layers over a first major surface of a mask substrate, and forming a capping layer over the multilayer Mo/Si stack. An absorber layer is formed on the capping layer, and a hard mask layer is formed over the absorber layer. The hard mask layer is patterned to form a hard mask layer pattern. The hard mask layer pattern is extended into the absorber layer to expose the capping layer and form a mask pattern. A border pattern is formed around the mask pattern. The border pattern is extended through the multilayer Mo/Si stack to expose the mask substrate and form a trench surrounding the mask pattern. A passivation layer is formed along sidewalls of the trench.

## Claims

### Claim 1

A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a capping layer disposed on the reflective multilayer;
an absorber layer disposed on the intermediate layer;
a circuit pattern formed in the absorber layer;
a black boarder comprising a trench formed in the absorber layer, the capping layer and the reflective multilayer reaching a first major surface of the substrate, and surrounding the circuit pattern; and
a passivation layer disposed along sidewalls of the trench in the black boarder and an upper surface of the capping layer in the circuit pattern.

### Claim 2 (depends on 1)

The reflective mask of claim 1, wherein the passivation layer is in direct contact of the first major surface of the substrate.

### Claim 3 (depends on 1)

The reflective mask of claim 1, further comprising an anti-reflection layer disposed over the absorber layer.

### Claim 4 (depends on 3)

The reflective mask of claim 3, wherein the passivation layer is formed on an upper surface of the anti-reflection layer and sidewalls of the circuit pattern.

### Claim 5 (depends on 1)

The reflective mask of claim 1, wherein the passivation layer has a thickness of less than 10 nm.

### Claim 6 (depends on 1)

The reflective mask of claim 1, wherein the passivation layer made of a silicon nitride, a silicon oxynitride, a metal doped silicon nitride, or a composite including at least one of metal silicide, metal nitride and metal oxide.

### Claim 7 (depends on 1)

The reflective mask of claim 1, wherein the passivation layer comprises a high-k material.

### Claim 8 (depends on 1)

The reflective mask of claim 1, wherein the passivation layer comprises nickel or cobalt.

### Claim 9

A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a capping layer disposed on the reflective multilayer;
an absorber layer disposed on the intermediate layer;
a circuit pattern formed in the absorber layer, wherein the absorber layer is exposed in the circuit pattern;
a black boarder formed in the absorber layer, the capping layer and the reflective multilayer and surrounding the circuit pattern; and
a passivation layer disposed along sidewalls of the black boarder and in direct contact with the substrate.

### Claim 10 (depends on 9)

The reflective mask of claim 9, wherein:
the black boarder comprises a trench formed in the absorber layer, the capping layer and the reflective multilayer and reaching a first major surface of the substrate, and
the passivation layer is in direct contact with the first major surface of the substrate.

### Claim 11 (depends on 9)

The reflective mask of claim 9, further comprising an anti-reflection layer disposed over the absorber layer,
wherein an upper surface of the anti-reflection layer is exposed.

### Claim 12 (depends on 9)

The reflective mask of claim 9, wherein the passivation layer has a thickness of less than 10 nm.

### Claim 13 (depends on 9)

The reflective mask of claim 9, wherein the passivation layer is made of a silicon nitride, a silicon oxynitride, a metal doped silicon nitride, or a composite including at least one of metal silicide, metal nitride and metal oxide.

### Claim 14 (depends on 9)

The reflective mask of claim 9, wherein the passivation layer comprises a high-k material.

### Claim 15 (depends on 9)

The reflective mask of claim 9, wherein the passivation layer comprises nickel or cobalt.

### Claim 16

A reflective mask, comprising:
a substrate made of a low thermal expansion glass material;
a reflective multilayer disposed on the substrate;
a capping layer disposed on the reflective multilayer;
an absorber layer disposed on the intermediate layer;
a circuit pattern formed in the absorber layer;
a black boarder formed in the absorber layer, the capping layer and the reflective multilayer, and surrounding the circuit pattern; and
a passivation layer disposed along sidewalls of the trench in the black boarder and in direct contact with the substrate.

### Claim 17 (depends on 16)

The reflective mask of claim 16, further comprising an anti-reflection layer disposed over the absorber layer.

### Claim 18 (depends on 16)

The reflective mask of claim 16, wherein the passivation layer has a thickness of less than 10 nm.

### Claim 19 (depends on 16)

The reflective mask of claim 16, wherein the passivation layer includes a nitride.

### Claim 20 (depends on 16)

The reflective mask of claim 16, wherein passivation layer comprises a Si—N bonding.