# US 2021/0239688 A1 · Biosensor System with Integrated Microneedle

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- Number: US 2021/0239688 A1
- Document ID: US20210239688A1
- Status: Published application
- Kind: A1
- Application number: 17/104,059
- Filed: 2020-11-25
- Published: 2021-08-05
- Earliest claimed: 2020-01-30
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Allen Timothy Chang; Jui-Cheng Huang; Wen-Chuan Tai; Yu-Jie Huang
- Web page: https://patentgrep.com/patent/US20210239688A1

## CPC

- G01N 33/54373: {involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings}
- A61B 5/14514: {using means for aiding extraction of interstitial fluid, e.g. microneedles or suction}
- A61B 5/685: {Microneedles}
- G01N 27/4145: {specially adapted for biomolecules, e.g. gate electrode with immobilised receptors}
- G01N 27/4148: {Integrated circuits therefor, e.g. fabricated by CMOS processing}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/983: {Reinforcing structures, e.g. collars}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; and a cap structure attached to the buried oxide layer, the cap structure comprising a microneedle.

## Claims

### Claim 1

A biosensor system package comprising:
a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region;
a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region;
a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; and
a cap structure attached to the buried oxide layer, the cap structure comprising a microneedle.

### Claim 2 (depends on 1)

The biosensor system package of claim 1, wherein the cap structure further comprises:
a cap structure substrate having a chamber configured to accommodate fluid samples to be tested, and wherein the microneedle is connected with the chamber for inflow and outflow of the fluid samples.

### Claim 3 (depends on 2)

The biosensor system package of claim 2, wherein the cap structure further comprises:
a high-k dielectric material layer covering a bottom and sidewalls of the chamber.

### Claim 4 (depends on 2)

The biosensor system package of claim 2, wherein the cap structure substrate has bonding areas interfacing with bonding sites of the buried oxide layer.

### Claim 5 (depends on 1)

The biosensor system package of claim 1, further comprising:
a temperature sensor formed in the semiconductor layer.

### Claim 6 (depends on 1)

The biosensor system package of claim 1, further comprising:
a reference electrode connected to the MLI structure and configured to provide a reference potential.

### Claim 7 (depends on 1)

The biosensor system package of claim 1, wherein the MLI structure comprises:
a plurality of interposing dielectric layers;
a plurality of conductive lines, each conductive line disposed in one of the plurality of interposing dielectric layers; and
a plurality conductive vertical interconnect access (VIA) structures connecting the plurality of conductive lines.

### Claim 8 (depends on 7)

The biosensor system package of claim 7, further comprising:
a carrier substrate on the MLI structure; and
a through substrate via (TSV) structure extending though the carrier substrate and configured to provide an electrical connection between the MLI structure and a first separate die.

### Claim 9 (depends on 8)

The biosensor system package of claim 8, wherein the TSV structure comprises:
a conductive material;
a liner isolating the conductive material from the carrier substrate; and
a diffusion barrier layer between the conductive material and the liner.

### Claim 10 (depends on 8)

The biosensor system package of claim 8, further comprising:
the first separate die, wherein the first separate die is electrically connected to the TSV structure and configured to process data collected by the transistor structure.

### Claim 11 (depends on 7)

The biosensor system package of claim 7, further comprising:
a wire boding opening through the buried oxide layer, the semiconductor layer, and the MLI structure, and wherein a first conductive line in a first metal (M1) layer of the MLI structure is exposed in the wire bonding opening.

### Claim 12 (depends on 11)

The biosensor system package of claim 11, wherein the first conductive line is electrically connected to a second separate die by wire bonding.

### Claim 13 (depends on 1)

The biosensor system package of claim 1, wherein the interface layer is a high-k material layer.

### Claim 14 (depends on 2)

The biosensor system package of claim 2, wherein the interface layer comprises a layer of capture reagent capable of binding a target analyte in the fluid samples.

### Claim 15 (depends on 7)

The biosensor system package of claim 7, further comprising:
an electric-resistive heater comprising a second conductive line in a M1 layer of the MLI structure.

### Claim 16

A biosensor system package comprising:
a biosensor structure in a semiconductor layer having a front side and a back side, the biosensor structure comprising a channel region and an interface layer covering the back side over the channel region;
a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and the interface layer is exposed in the opening;
a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the biosensor structure being electrically connected to the MLI structure;
a reference electrode connected to the MLI structure and configured to provide a reference potential; and
a cap structure attached to the buried oxide layer, the cap structure comprising a microneedle.

### Claim 17 (depends on 16)

The biosensor system package of claim 16, further comprising:
a temperature sensor formed in the semiconductor layer; and
an electric-resistive heater comprising a conductive line in a first metal (M1) layer of the MLI structure.

### Claim 18

A method of fabricating a biosensor system package comprising:
providing a substrate, the substrate comprising a semiconductor layer having a front side and a back side, a buried oxide (BOX) layer at the back side, and a bulk silicon layer at the back side;
forming a transistor structure on the substrate, wherein a channel region of the transistor structure is in the semiconductor layer;
forming a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, wherein the MLI structure is electrically connected to the transistor structure;
attaching a carrier substrate to the MLI structure;
removing the bulk silicon layer;
etching the buried oxide layer to form an opening at the back side over the channel region;
depositing an interface layer on the back side over the channel region;
fabricating a cap structure using a complementary metal-oxide-semiconductor (CMOS) compatible process flow;
bonding the cap structure to the BOX layer; and
creating a microneedle on the cap structure.

### Claim 19 (depends on 18)

The method of claim 18, wherein the creating the microneedle on the cap structure comprises:
multiplexing an isotropic etching process and an anisotropic etching process.

### Claim 20 (depends on 18)

The method of claim 18, wherein the creating the microneedle on the cap structure comprises:
depositing a hard mask;
etching the cap structure using an anisotropic etching process by a predetermined depth;
removing the hard mask; and
etching the cap structure using an isotropic etching process.