# US 2021/0239557 A1 · Pressure sensor using field effect and manufacturing method thereof

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- Number: US 2021/0239557 A1
- Document ID: US20210239557A1
- Status: Published application
- Kind: A1
- Application number: 17/250,008
- Filed: 2019-04-26
- Published: 2021-08-05
- Earliest claimed: 2018-04-30
- Assignees: Inner Sensor Co., Ltd.
- Applicants: Inner Sensor Co., Ltd.
- Inventors: Moon Sik KANG
- Web page: https://patentgrep.com/patent/US20210239557A1

## CPC

- G01L 1/142: {using capacitors}
- G01L 9/0073: {using a semiconductive diaphragm}
- G01L 1/26: Auxiliary measures taken, or devices used, in connection with the measurement of force, e.g. for preventing influence of transverse components of force, for preventing overload
- G01L 9/0048: {Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief}
- G01L: MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE (weighing G01G)

## Abstract

A pressure sensor using an electric field effect, the pressure sensor includes a first electrode extending in a vertical direction and defining a core region, a second electrode disposed to entirely surround the first electrode, a first insulating layer interposed between the first and second electrodes, a ground electrode electrically insulated from the second electrode, the ground electrode being disposed to surround the second electrode and a membrane connected to the ground electrode and positioned to cover the first and second electrodes, and the membrane being provided to generate an electric field in an adjacent region together with the first and second electrodes, and being configured to make the electric field to distort when an object approaches thereto.

## Claims

### Claim 1

A pressure sensor using an electric field effect, the pressure sensor comprising:
a first electrode extending in a vertical direction and defining a core region;
a second electrode disposed to entirely surround the first electrode;
a first insulating layer interposed between the first and second electrodes;
a ground electrode electrically insulated from the second electrode, the ground electrode being disposed to surround the second electrode; and
a membrane connected to the ground electrode and positioned to cover the first and second electrodes, and the membrane being provided to generate an electric field in an adjacent region together with the first and second electrodes, and being configured to make the electric field to distort when an object approaches thereto.

### Claim 2 (depends on 1)

The pressure sensor of claim 1, further comprising a second insulating layer interposed between the second electrode and the ground electrode.

### Claim 3 (depends on 1)

The pressure sensor of claim 1, wherein the ground electrode has a protrusion portion at an outermost portion thereof, and the protrusion portion is connected to an outer periphery of the membrane.

### Claim 4 (depends on 1)

The pressure sensor of claim 1, wherein the membrane includes silicon or metal.

### Claim 5 (depends on 1)

The pressure sensor of claim 1, wherein the first and second electrodes and the ground electrode define a core shell structure.

### Claim 6 (depends on 1)

The pressure sensor of claim 1, wherein the first electrode includes a central portion and a plurality of extension portions extending in a radial direction with respect to the central portion.

### Claim 7

A method of manufacturing a pressure sensor using an electric field, the method comprising:
forming a lower structure including a first electrode extending in a vertical direction and defining a core region, a second electrode disposed to surround the first electrode and generating an electrical field together with the first electrode, a first insulating layer being interposed between the first and second electrodes, and a ground electrode disposed to surround the second electrode;
forming an upper structure including a membrane being connected to the ground electrode and being positioned to cover the first and second electrodes, the membrane being provided to form an electric field in an adjacent region together with the first and second electrodes, and to make the electric field to distort when an object approaches thereto; and
combining the lower structure with the upper structure.

### Claim 8 (depends on 7)

The method of claim 7, wherein forming the lower structure:
forming an epitaxial layer on a substrate;
patterning the epitaxial layer to form an electrode pattern; and
forming an insulating layer to cover the electrode pattern.

### Claim 9 (depends on 7)

The method of claim 7, wherein forming the lower structure:
forming a photoresist pattern on a substrate;
performing an electroplating process to form an electrode pattern in an exposed area where an upper surface of the substrate is exposed;
removing the photoresist pattern from the substrate; and
forming an insulating layer to cover the electrode pattern.

### Claim 10 (depends on 7)

The method of claim 7, wherein forming the lower structure:
forming at least one via hole penetrating through a substrate;
forming a polysilicon layer in the via hole; and
patterning the polysilicon layer.

### Claim 11 (depends on 7)

The method of claim 7, wherein combining the lower structure with the upper structure includes performing an anodic boding process or an adhesive bonding process.
