Semiconductor Apparatus, Pixel Circuit and Control Method Thereof

A control method of a pixel circuit, the pixel circuit comprising a semiconductor appartus, a photosensitive device, and a light emitting device;

• the semiconductor apparatus comprising:
• an active layer;
• a first insulating layer;
• a first gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively;
• a first electrode, a second electrode and a third electrode, the first electrode is electrically connected with a first portion of the active layer and the second electrode is electrically connected with a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate;
• or, the third electrode is electrically connected with a third portion of the active layer;
• wherein the photosensitive device is electrically connected with one of the first gate and the second gate, the light emitting device is connected to one of the first electrode and the second electrode;
• the semiconductor apparatus is configured to be in a sub-threshold region during a first period;
• the photosensitve device is configured for being in a reverse bias state in a case that a transistor in the semiconductor apparatus is in the sub-threshold region;
• in a case that the photosensitive device is in the reverse bias state, the photosensitive device converts an optical signal into an electric charge in response that the optical signal is detected, so as to make the one of the first gate and the second gate generate a bias voltage and to make the semiconductor apparatus generate a fist current under the bias voltage;
• the method comprising:
• receiving a first control signal by the first gate and the second gate, so that the semiconductor apparatus works in the sub-threshold region;
• receiving a second control signal by the photosensitive device, so that the photosensitive device is in the reverse bias state;
• in the case that the photosensitive device is in the reverse bias state, converting the optical signal into the electric charge by the photosensitive device in response to the optical signal detected, so as to make the one of the first gate and the second gate generate the bias voltage, and make the semiconductor apparatus generate the first current under the bias voltage.

A control method of a pixel circuit, the pixel circuit comprising a semiconductor apparatus, a photosensitive device, and a light emitting device;

• the semiconductor apparatus comprising:
• an active layer;
• a first insulating layer;
• a first gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively;
• a fist electrode, a second electrode and a third electrode, the fist electrode is electrically connected with a first portion of the active layer and the second electrode is electrically connected with a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate;
• or, the third electrode is electrically connected with a third portion of the active layer;
• wherein the photosensitive device is electrically connected with the third portion of the active layer, the light emitting device is connected to one of the first electrode and the second electrode;
• the semiconductor apparatus is configured to be in an off state during a third period;
• the photosensitive decide is configured to be in a reverse bias state in a case that the semiconductor apparatus is in the off state, to convert an optical signal into an electric charge in response that the optical signal is detected;
• the semiconductor apparatus is further configured to lead out the electric charge as a third current when the semiconductor apparatus is in a first partial on state;
• the method comprising:
• receiving a fifth control signal by the first gate and the second gate, so that the semiconductor apparatus is in the off state;
• receiving a second control signal by the photosensitive device, so that the photosensitive device is in the reverse bias state to convert the optical signal into the electric charge in response that the optical signal is detected;
• receiving a third control signal by the first gate and receiving a fifth control signal by the second gate, so that the semiconductor apparatus is in the first partial on state to lead out the electric charge as the third current.