GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
AssigneeMitsubishi Chemical Corporation
InventorsHideo FUJISAWA, Yutaka MIKAWA, Shinichiro KAWABATA, Hideo NAMITA, Tae MOCHIZUKI
Life of this patent
Estimating the term…
Abstract
A GaN single crystal having a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 μm×100 μm square, pit-free areas account for 80% or more of the plurality of sub-areas.
Claims14
A GaN single crystal comprising a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 μm×100 μm square, pit-free areas account for 80% or more of the plurality of sub-areas.
A GaN single crystal having a comprising polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein at least one square pit-free area of 1.3 mm×1.3 mm is found on the gallium polar surface.
Dependencies are inferred from the claim text.