Methods and devices for growing scintillation crystals with multi-component garnet structure

A method for growing a crystal, wherein:

• a formula of the crystal is A3yB5xO12, wherein
• A consists of at least one of lanthanide, at least one of actinide, or at least one of yttrium;
• B consists of at least one of aluminum, gallium, indium or scandium;
• and
• x=0.01%˜50%, y=0.001%˜6%;
• the method comprises:
• weighting reactants based on a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants;
• placing the reactants, on which a second preprocrssing operation has been performed, into a crystal growth device;
• introducing a flowing gas into the crystal growth device after sealing the crystal growth device;
• and
• activating the crystal growth device to grow the crystal based on a Czochralski technique.

A method for growing a crystal, comprising:

• weighting reactants based on a molar ratio of the reactants according to a reaction equation (1) after a first preprocessing operation is performed on the reactants,
• 6yCeO2+3(1−y)Gd2O3+5xAl2O3+5(1−x)Ga2O3→2(CeyGd1-y)3(AlxGa1-x)5O12+O2↑ (1)
• wherein x=0.01% 50%, y=0.001%˜6%, and a weight of Ga2O3 exceeds 0.01%˜10% of a weight of Ga2O3 determined according to the reaction equation (1) or a total weight of the reactants determined according to the reaction equation (1);
• placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device;
• introducing a flowing gas into the crystal growth device after sealing the crystal growth device;
• and
• activating the crystal growth device to grow the crystal based on a Czochralski technique.