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US 2021/0230747 A1Published application
Selective deposition of sicon by plama ald
AssigneeApplied Materials, Inc.
InventorsShuaidi Zhang, Ning Li, Mihaela Balseanu
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Abstract
Methods of selectively forming SiCON films are described. In some embodiments, the methods comprise sequential exposure to a silicon halide, a mixture of alkanolamine and amine reactants and a deposition plasma. In some embodiments, the method further comprises pre-cleaning the target substrate to improve selectivity.
Claims20
A method of selectively depositing a SiCON film, the method comprising:
- exposing a substrate having a surface comprising a first material surface and a second material surface to a first reactive gas comprising a halosilane;
- purging the first reactive gas from the substrate surface;
- exposing the substrate surface to a second reactive gas comprising an alkanolamine and an amine;
- purging the second reactive gas from the substrate surface;
- and
- exposing the substrate surface to a deposition plasma comprising H2, wherein a first thickness of SiCON deposited on the first material surface is greater than a second thickness of SiCON deposited on the second material surface.
3 more elements
A method of selectively depositing a SiCON layer, the method comprising:
- sequentially exposing a substrate surface comprising a first material and a second material to a first reactive gas, a second reactive gas and a deposition plasma, the second material comprising silicon oxide, the first reactive gas comprising a halosilane, the second reactive gas comprising ethylenediamine and ethanolamine, and the deposition plasma comprising H2;
- and
- repeating the sequential exposures to form a SiCON layer with a predetermined first thickness on the first material and a second thickness on the second material, the predetermined first thickness being greater than the second thickness.
A method of selectively depositing a SiCON layer, the method comprising:
- exposing a substrate having a surface comprising a first material surface and a second material surface to a first process condition in a first process region, the first process condition comprising a halosilane;
- laterally moving the substrate through a gas curtain from the first process region to a second process region, the gas curtain comprising a purge gas stream and optionally a vacuum region;
- exposing the substrate surface to a second process condition in the second process region, the second process condition comprising an alkanolamine and an amine;
- laterally moving the substrate through a gas curtain from the second process region to a third process region, the gas curtain comprising a purge gas stream and optionally a vacuum region;
- exposing the substrate surface to a third process condition in the third process region, the third process condition comprising a deposition plasma comprising H2;
- laterally moving the substrate through a gas curtain from the third process region, the gas curtain comprising one or more of a purge gas stream and/or a vacuum region;
- and
- repeating exposures to the first process condition, the second process condition and the third process condition to selectively deposit a SiCON film with a predetermined first thickness on the first surface and a second thickness on the second surface, the predetermined first thickness being greater than the second thickness.
5 more elements
Dependencies are inferred from the claim text.