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US 2021/0230739 A1Published application
Physical Vapor Deposition Apparatus And Methods With Gradient Thickness Target
AssigneeApplied Materials, Inc.
InventorsBinni Varghese, Ribhu Gautam
Life of this patent
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Abstract
A physical vapor deposition chamber a first target comprising a bottom surface, a top surface, a cross-sectional thickness defining a first target cross-sectional thickness between the top surface and the bottom surface, a first end and a second end opposite the first end, the cross-sectional thickness at the first end being less than the cross-sectional thickness at the second end. Methods of processing a substrate are also provided.
Claims20
A physical vapor deposition chamber comprising:
- a first target comprising material to be deposited on a substrate, the first target comprising a bottom surface, a top surface, a cross-sectional thickness defining a first target cross-sectional thickness between the top surface and the bottom surface, a first end and a second end opposite the first end, the cross-sectional thickness T1 at the first end being less than the cross-sectional thickness T2 at the second end.
A physical vapor deposition chamber comprising:
- a first target comprising material to be deposited on a substrate, the first target comprising a bottom surface, a top surface, a cross-sectional thickness defining a first target cross-sectional thickness between the top surface and the bottom surface, a first end and a second end opposite the first end, the cross-sectional thickness at the first end being less than the cross-sectional thickness at the second end;
- and
- a second target comprising a second target bottom surface, a second target top surface defining a second target cross-sectional thickness between the second target top surface and the second target bottom surface, a second target first end and a second target second end opposite the second target first end, the second target cross-sectional thickness at the second target first end less than the cross-sectional thickness at the second end of the second target, wherein the physical vapor deposition chamber comprises a chamber liner surrounding a substrate support, the chamber liner defining a process area including a center, and substrate support is on center and the first target and the second target are off-center.
A substrate processing method comprising:
- supporting a substrate having an exposed substrate surface in a physical vapor deposition process chamber on a substrate support;
- forming a plume of deposition material from at least a first target comprising first target material, the plume of deposition material forming a plume area with respect to the substrate surface, the target comprising a center, a bottom surface and a top surface, and a first target cross-sectional thickness between the top surface and the bottom surface, a first end and a second end opposite the first end, the first target cross sectional thickness T1 at the first end is less than the first target cross sectional thickness T2 at the second end;
- and
- depositing a layer from the plume of deposition material on the exposed substrate surface.
1 more element
Dependencies are inferred from the claim text.