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US 2021/0230451 A1Published application
Cmp slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
AssigneeSamsung SDI Co., Ltd.
InventorsWon Jung KIM, Yoon Young KOO, Tae Won PARK, Eui Rang LEE, Jong Won LEE, Youn Jin CHO
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Abstract
A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.
Claims18
A CMP slurry composition for polishing a tungsten pattern wafer, the composition comprising:
- a solvent, the solvent including a polar solvent or a non-polar solvent;
- an abrasive agent;
- and
- an oxidizing agent,
- wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.
2 more elements
Dependencies are inferred from the claim text.