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US 2021/0230193 A1Published application
Precursor compounds for atomic layer deposition (ald) and chemical vapor deposition (cvd) and ald/cvd process using the same
AssigneeHansol Chemical Co., Ltd.
InventorsJung-Wun Hwang, Ki-Yeung Mun, Jun-Won Lee, Kyu-Hyun Yeom, Jang-Hyeon Seok, Jung-Woo Park
Life of this patent
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Abstract
The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.
Claims10
A compound represented by Chemical Formula 1 below:
- in Chemical Formula 1,
- when M is a divalent transition metal of Group 12 on a periodic table, n is 1;
- when M is a trivalent transition metal of Group 13 on a periodic table, n is 2;
- and
- R1 to R5 are hydrogen, a substituted or unsubstituted C1 to C4 linear or branched alkyl group or an isomer thereof.
2 more elements
Dependencies are inferred from the claim text.