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US 2021/0202835 A1Published application
Nonvolatile memory device having resistance change layer and method of operating nonvolatile memory device
AssigneeSK hynix Inc.
InventorsJae Hyun HAN, Hyangkeun YOO, Se Ho LEE
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Abstract
A nonvolatile memory device according to an embodiment includes a substrate, a resistance change layer disposed over the substrate, a gate insulation layer disposed on the resistance change layer, a gate electrode layer disposed on the gate insulation layer, and a first electrode pattern layer and a second electrode pattern layer that are disposed respectively over the substrate and disposed to contact a different portion of the resistance change layer.
Claims17
A nonvolatile memory device comprising:
- a substrate;
- a resistance change layer disposed over the substrate;
- a gate insulation layer disposed on the resistance change layer;
- a gate electrode layer disposed on the gate insulation layer;
- and
- a first electrode pattern layer and a second electrode pattern layer that are disposed respectively over the substrate and disposed to contact different portions of the resistance change layer.
3 more elements
A nonvolatile memory device comprising:
- a substrate;
- a gate electrode layer disposed over the substrate;
- a gate insulation layer disposed over the substrate and disposed to surround the gate electrode layer;
- first and second electrode pattern layers disposed over the substrate and respectively disposed on opposite sides of the gate electrode layer;
- and
- a resistance change layer disposed on the gate insulation layer and on the first and second electrode pattern layers,
- wherein the resistance change layer comprises oxygen vacancies and movable metal ions.
4 more elements
A nonvolatile memory device comprising:
- a substrate;
- a first electrode pattern layer and a second electrode pattern layer that are disposed on the substrate and disposed to be spaced apart from each other;
- a resistance change layer disposed over the first electrode pattern layer and the second electrode pattern layer;
- and
- a gate insulation layer and a gate electrode layer that are sequentially disposed on the resistance change layer,
- wherein the resistance change layer comprises oxygen vacancies and movable metal ions.
3 more elements
Dependencies are inferred from the claim text.