Variable resistance memory device

A variable resistance memory device comprising:

• a support layer including an insulating material;
• a variable resistance layer on the support layer, the variable resistance layer including a first layer and a second layer,
• the second layer on the first layer, the first layer including a first material, the second layer including a second material having a valence different from a valence of the first material;
• a channel layer on the variable resistance layer;
• a gate insulating layer on the channel layer;
• and
• a plurality of gate electrodes on the gate insulating layer, the plurality of gate electrodes being separated from one another.

A variable resistance memory device comprising:

• a variable resistance layer including a plurality of layers sequentially on each other,
• the plurality of layers including a first layer and a second layer in contact with each other and having materials with different valences from each other, an interface between the first layer and the second layer including a plurality of oxygen vacancies;
• a first conductive element connected to a first region of the variable resistance layer;
• and
• a second conductive element connected to a second region of the variable resistance layer, the second conductive element being spaced apart from the first conductive element.