Design of spin-orbit torque magnetic random access memory
AssigneeThe Hong Kong University of Science and Technology
InventorsXiangrong WANG, Yin ZHANG, Huaiyang YUAN
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Abstract
Methods and devices for a spintronic device of spin-orbit torque magnetic random access memory (SOT-MRAM) are provided. A unit cell of a device can comprise a ferromagnetic (or ferrimagnetic or antiferromagnetic) layer on the heavy metal layer, and a current source configured to transmit either non-collinear current pulses in the heavy-metal layer or two perpendicular currents in the heavy metal layer. The current pulses exhibit a phase difference, and the magnitude of a sum of the respective current pulses is constant (in its simplest form) and the flow direction of the pulses is time-dependent.
Claims22
A SOT-MRAM device comprising a first unit cell, the first unit cell comprising:
- a heavy metal layer;
- a ferromagnetic layer on the heavy metal layer;
- and
- a current source configured to transmit non-collinear current pulses into the heavy-metal layer.
A SOT-MRAM device comprising a second unit cell, the second unit cell comprising:
- a heavy metal layer;
- a free layer on the heavy metal layer;
- a spacer on the free layer;
- a fixed layer on the spacer;
- an antiferromagnetic layer on the fixed layer;
- and
- a current source configured to transmit non-collinear currents pulses into the heavy-metal layer.
A method of producing a qubit in a quantum computing structure;
- the method comprising:
- providing a ferromagnetic layer on the heavy metal layer;
- and
- transmitting, by a current source, non-collinear current pulses into the heavy-metal layer.
Dependencies are inferred from the claim text.