Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChen-Yi Weng, Jing-Yin Jhang
Life of this patent
Estimating the term…
Abstract
A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a liner on the MTJ; removing part of the liner to form a recess exposing the MTJ; and forming a conductive layer in the recess, wherein top surfaces of the conductive layer and the liner are coplanar. Preferably the MTJ further includes: a bottom electrode on the substrate, a fixed layer on the bottom electrode, and a top electrode on the fixed layer, in which the conductive layer and the top electrode are made of same material.
Claims8
A method for fabricating semiconductor device, comprising:
- forming a magnetic tunneling junction (MTJ) on a substrate;
- forming a liner on the MTJ;
- removing part of the liner to form a recess exposing the MTJ;
- and
- forming a conductive layer in the recess, wherein top surfaces of the conductive layer and the liner are coplanar.
Dependencies are inferred from the claim text.